2SD1993S [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MT-1-A1, 3 PIN;
| 型号： | 2SD1993S |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MT-1-A1, 3 PIN 放大器 晶体管 |
| 文件： | 总3页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors
2SD1993
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Unit: mm
6.9 0.1
(4.0)
2.5 0.1
(0.8)
(0.7)
■ Features
• Low noise voltage NV
• High forward current transfer ratio hFE
• Allowing supply with the radial taping
0.65 max.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
55
+0.10
+0.10
55
V
0.45
–0.05
0.45
–0.05
1.05 0.05
2.5 0.5
7
100
V
2.5 0.5
mA
mA
mW
°C
1: Emitter
2: Collector
3: Base
Peak collector current
ICP
200
1
2
3
Collector power dissipation
Junction temperature
PC
400
MT-1-A1 Package
Tj
150
Storage temperature
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
55
55
7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
V
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 20 V, IB = 0
VCE = 10 V, IC = 2 mA
V
0.1
1
µA
µA
ICEO
hFE
210
650
1
VCE(sat) IC = 100 mA, IB = 10 mA
V
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
200
MHz
mV
Noise voltage
NV
VCE = 10 V, IC = 1 mA, GV = 80 dB
150
Rg = 100 kΩ, Function = FLAT
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
R
S
T
hFE
210 to 340
290 to 460
360 to 650
Publication date: April 2003
SJC00236BED
1
2SD1993
PC Ta
IC VCE
IC VBE
500
400
300
200
100
0
120
100
80
60
40
20
0
120
100
80
60
40
20
0
Ta = 25°C
VCE = 5 V
IB = 400 µA
25°C
350 µA
300 µA
250 µA
Ta = 75°C
−25°C
200 µA
150 µA
100 µA
50 µA
0
40
80
120
160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
(
)
Ambient temperature Ta °C
( )
V
(
)
V
Collector-emitter voltage VCE
Base-emitter voltage VBE
VCE(sat) IC
hFE IC
fT IE
400
300
200
100
0
1000
800
600
400
200
0
100
IC / IB = 10
VCB = 5 V
Ta = 25°C
VCE = 5 V
10
1
Ta = 75°C
25°C
−25°C
Ta = 75°C
−25°C
0.1
0.01
25°C
−1
−10
−100
0.1
1
10
100
0.1
1
10
100
(
)
(
)
(
)
Emitter current IE mA
Collector current IC mA
Collector current IC mA
Cob VCB
NF IE
NV IC
10
8
8
120
IE = 0
f = 1 MHz
Ta = 25°C
VCE = 10 V
GV = 80 dB
Function = FLAT
VCE = 5 V
Rg = 1 kΩ
Ta = 25°C
100
80
60
40
20
0
6
4
2
Rg = 100 kΩ
6
4
f = 100 Hz
22 kΩ
5 kΩ
1 kHz
2
10 kHz
0
0
−10
1
10
100
−100
−1000
0.01
0.1
1
(
)
V
Collector-base voltage VCB
(
)
Emitter current IE µA
(
)
Collector current IC mA
SJC00236BED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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