2SD2273 [PANASONIC]
Silicon NPN triple diffusion planar type Darlington(For power amplification); 硅NPN三重扩散平面型达林顿(对于功率放大)型号: | 2SD2273 |
厂家: | PANASONIC |
描述: | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
文件: | 总3页 (文件大小:59K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Power Transistors
2SD2273
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
φ 3.3±0.2
5.0±0.3
Complementary to 2SB1500
20.0±0.5
3.0
Features
Optimum for 40W HiFi output
■
●
●
High foward current transfer ratio hFE: 5000 to 30000
●
Low collector to emitter saturation voltage VCE(sat): <2.5V
1.5
1.5
2.0±0.3
2.7±0.3
3.0±0.3
Absolute Maximum Ratings (T =25˚C)
■
C
1.0±0.2
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
0.6±0.2
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
100
5.45±0.3
10.9±0.5
80
V
1:Base
2:Collector
3:Emitter
5
V
6
A
1
2
3
TOP–3L Package
IC
3
45
A
Collector power TC=25°C
Internal Connection
PC
W
dissipation
Ta=25°C
3.5
C
Junction temperature
Storage temperature
Tj
150
˚C
˚C
B
Tstg
–55 to +150
E
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
100
100
Unit
µA
µA
µA
V
VCB = 100V, IE = 0
Collector cutoff current
ICEO
IEBO
VCEO
hFE1
VCE = 80V, IB = 0
VEB = 5V, IC = 0
Emitter cutoff current
Collector to emitter voltage
I
C = 30mA, IB = 0
80
VCE = 5V, IC = 1A
2000
5000
Forward current transfer ratio
*
hFE2
VCE = 5V, IC = 2A
30000
2.5
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 2A, IB = 2mA
V
V
IC = 2A, IB = 2mA
3.0
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 0.5A, f = 1MHz
20
MHz
µs
3.5
2.5
0.6
IC = 2A, IB1 = 2mA, IB2 = –2mA,
VCC = 50V
µs
µs
*hFE2 Rank classification
Rank
hFE2
Q
P
5000 to 15000 8000 to 30000
1
Power Transistors
2SD2273
PC — Ta
IC — VCE
VBE(sat) — IC
80
6
5
4
3
2
1
0
100
IC/IB=1000
TC=25˚C
(1) TC=Ta
70
(2) With a 100 × 100 × 2mm
30
10
Al heat sink
(3) Without heat sink
(PC=3.5W)
60
50
40
30
20
10
0
IB=3mA
(1)
0.5mA
0.4mA
3
1
TC=–25˚C
25˚C
0.3mA
0.2mA
100˚C
(2)
(3)
0.3
0.1
0.1mA
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.1
0.3
1
3
10
30
100
(
)
(
V
)
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
Cob — VCB
100
100000
1000
IC/IB=1000
VCE=5V
IE=0
f=1MHz
TC=25˚C
30
10
300
100
10000
1000
100
10
TC=100˚C
25˚C
–25˚C
TC=100˚C
3
1
30
10
25˚C
–25˚C
0.3
0.1
3
1
0.1
0.3
1
3
10
30
100
0.01
0.1
1
10
1
3
10
30
100
(
A
)
(
A
)
( )
Collector to base voltage VCB V
Collector current IC
Collector current IC
ton, tstg, tf — IC
Area of safe operation (ASO)
100
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000 (IB1=–IB2
VCC=50V
TC=25˚C
Non repetitive pulse
TC=25˚C
30
10
)
30
10
ICP
IC
t=1ms
ton
10ms
DC
3
1
3
1
tstg
tf
0.3
0.1
0.3
0.1
0.03
0.01
0.03
0.01
0
2
4
6
8
1
3
10
30
100 300 1000
(
A
)
( )
Collector to emitter voltage VCE V
Collector current IC
2
Power Transistors
2SD2273
Rth(t) — t
1000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100
10
1
(1)
(2)
0.1
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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