2SD2345JT [PANASONIC]
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F1, SC-89, 3 PIN;
| 型号： | 2SD2345JT |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F1, SC-89, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：472K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
Silicon NPN epitaxial planar type
For low frequency amplification
Unit: mm
+0.05
–0.03
1.60
+0.03
–0.01
0.12
1.00±0.05
Features
3
High forward current transfer ratio hFE
Low collector-emitter saturation voltage VCE(sat)
High emitter-base voltage (Collector open) VEBO
Low noise voltage NV
1
2
0.27±02
0.50)(0.50)
Absolute Maximum Ratings T= 25C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Ratin
Unit
V
5°
50
V
V
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
50
mA
mA
mW
C
Peak collector current
ICP
100
SSMini3-F1 Package
Collector power dissipation
Junction temperature
PC
125
Marking Symbol: 1Z
Tj
125
Storage temperature
T
stg
–5to +125
C
Electrical Chaistics T= 5C±3C
Parameter
Symbol
Conditions
Min
50
Typ
Max
Unit
V
Collector-base oltage (Emittr open)
Collector-emittee opn)
Emitter-base voltaopen)
Collector-base cutoff c(Emitter ope
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
VCBO I= 10 µA, I= 0
VCEO IC = 1 mA, IB = 0
VEBO I= 10 µA, I= 0
40
V
15
V
ICBO
ICEO
hFE
VCB = 20 V, I= 0
VCE = 20 V, IB = 0
VCE = 10 V, I= 2 mA
0.1
1
µA
µA
600
2000
0.2
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 10 mA, IB = 1 mA
fT VCB = 10 V, IE = —2 mA, f = 200 MHz
0.05
V
120
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
Rank
S
T
hFE
600 to 1200
1000 to 2000
Publication date: November 2005
SJC00337AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2345J
PC T
IC VCB
IC VCE
60
IB = 50 µA
120
80
40
20
0
40 µA
30 µA
40
20
0
Ta = 85°C
25°C
−25°C
20 µA
10 µA
40
VC= 10 V
1.2
0
0
40
80
120
0
0.4
0.8
0
4
8
12
Ambient temperature Ta (°C)
Collctor-bse voltage VCB (V)
Collector-emitter voltage VCE (V)
VCE(sat) IC
hFE I
Cob VCB
10−1
10
1600
1200
80
0
IC /IB = 10
f = 1 MHz
Ta = 25°C
V
CE = V
Ta 85°C
25C
25°C
Ta = 85°C
25°
C
10−2
10−
1
1
10
102
0
10
20
30
40
1
10
102
Collector-base voltage VCB (V)
Collectr current IC (mA)
Collector current IC (mA)
2
SJC00337AED
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