2SD814S [PANASONIC]
Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, SC-59, 3 PIN;
| 型号： | 2SD814S |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, SC-59, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD0814, 2SD0814A (2SD814, 2SD814A)
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
Unit: mm
amplification
+0.10
0.40
ñ0.05
+0.10
-0.06
Features
High collector to emitter voltage VCEO
Low noise voltage NV.
0.16
ꢀ
ꢀ
3
.
ꢀ
ꢀ
Mini type package, allowing downsizing of the equipmnt and
automatic insertion through the tape packing and the magazine
packing.
()
1.9±0.1
+0.20
2.90
-0.05
Absolute Maximum Ratings (Ta=25˚C)
ꢀ
10°
Parameter
Symbol
atin
15
Unit
Collector to
2SD0814
2SD0814A
2SD081
V
V
base voltage
Collector to
185
150
VO
V
emitter voltage 2SD0814A
Emitter to base voltge
Peak collector curre
Collector current
185
VEO
ICP
IC
5
V
mA
mA
mW
˚C
1:Bae
2:Emitter
3:Collector
EIAJ:SC–59
Mini3-G1 Package
10
0
(2SD0814)
(2SD0814A)
Marking symbol : P
Collectpowssipation
Junion teure
Stoage emperature
PC
0
L
T
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
ꢀ
Symbol
ICBO
Conditions
min
typ
max
Unit
Collector c
VCB = 100V, IE = 0
1
µA
Collector to em2SD0814
150
185
5
VCEO
IC = 100µA, IB = 0
V
V
voltage
2SD0814A
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
*
Forward current transfer ratio
hFE
VCE = 5V, IC = 10mA
90
330
1
Collector to emitter saturation voltage VCE(sat)
IC = 30mA, IB = 3mA
V
MHz
pF
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
150
Collector output capacitance
Cob
2.3
Noise voltage
NV
150
mV
*hFE Rank classification
Rank
hFE
Q
R
S
90 ~ 155
PQ
130 ~ 220
PR
185 ~ 330
PS
2SD0814
Marking
Symbol
Note.) The Part numbers in the Parenthesis show
conventional part number.
2SD0814A
LQ
LR
LS
556
Transistor
2SD0814, 2SD0814A
PC — Ta
IC — VCE
IC — VBE
240
200
160
120
80
120
100
80
60
40
20
0
120
Ta=25˚C
VCE=10V
25˚C
100
80
60
40
IB=2.0mA
1.8mA
1.6mA
1.4A
1.2mA
Ta=75˚C
–25˚C
1.0mA
0.8mA
0.6mA
.2mA
40
0
0
20 40 60 80 100 120 140 160
0
4
8
10
1
0.4
0.8
2
1.6
2.0
(
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Colctor temitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IE
100
600
200
160
120
80
VCB=10V
Ta=25˚C
IC/IB=10
VCE=10V
30
10
500
400
300
100
0
3
1
Ta=75˚C
25˚C
Ta=75˚C
–25˚C
0.3
.1
5˚C
–25
40
03
0.01
0
–1
0
0.3
1
1
30
00
0.
0.3
1
3
10
30
100
–3
–10
–30
–100
(
(
)
(
)
CourrenIC mA
Collector current IC mA
Emittr current IE mA
VCB
5
IE=0
f=1MHz
Ta=25˚C
4
3
2
1
0
1
3
10
30
100
( )
V
Collector to base voltage VCB
557
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