2SD817 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD817 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD817
DESCRIPTION
·With TO-3 package
·High voltage ,high reliability
·Wide area of safe operation
APPLICATIONS
·High voltage power switching TV horizontal
deflection output applications
PINNING(see fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
1500
600
UNIT
V
Open emitter
Open base
V
Open collector
6
V
1.5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
50
W
ꢀ
Tj
150
Tstg
-55~150
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD817
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)EBO
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
6
TYP.
MAX
UNIT
Emitter-base breakdown voltage
IE=1mA; IC=0
V
V
Collector-emitter breakdown voltage IC=10mA; IB=0
600
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=1.2A; IB=0.3A
IC=1.2A; IB=0.3A
VCB=800V;IE=0
VEB=6V; IC=0
5.0
1.5
10
V
V
µA
µA
IEBO
10
hFE
DC current gain
IC=0.3A ; VCE=5V
10
30
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD817
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号：
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