LN151 [PANASONIC]

GaAs Infrared Light Emitting Diodes; 砷化镓红外发光二极管
LN151
型号: LN151
厂家: PANASONIC    PANASONIC
描述:

GaAs Infrared Light Emitting Diodes
砷化镓红外发光二极管

二极管
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Infrared Light Emitting Diodes  
Unit : mm  
LN151F  
LN151F, LN151L  
ø4.6±0.15  
Glass window  
GaAs Infrared Light Emitting Diodes  
For optical control systems  
2-ø0.45±0.05  
2.54±0.25  
Features  
High-power output, high-efficiency : PO = 7.5 mW (typ.)  
Fast response and high-speed modulation capability :  
1.0  
±
0.2  
tr, tf = 1 µs (typ.)  
45  
±
0.15  
3˚  
Infrared light emission close to monochromatic light :  
±
1.0  
λP = 950 nm (typ.)  
2
1
Narrow directivity, suitable for effective use of radiant power  
(LN151L)  
ø5.75 max.  
1: Anode  
2: Cathode  
Wide directivity, matched for external optical systems (LN151F)  
TO-18 standard type package  
Unit : mm  
LN151L  
ø4.6±0.15  
Glass lens  
Absolute Maximum Ratings (Ta = 25˚C)  
Parameter  
Symbol  
Ratings  
Unit  
mW  
mA  
A
Power dissipation  
PD  
IF  
160  
Forward current (DC)  
Pulse forward current  
Reverse voltage (DC)  
Operating ambient temperature  
Storage temperature  
100  
*
2-ø0.45 ± 0.05  
2.54±0.25  
IFP  
2
VR  
Topr  
Tstg  
3
V
–25 to +100  
–30 to+100  
˚C  
1.0  
±
˚C  
0.2  
*
45  
f = 100 Hz, Duty cycle = 0.1 %  
±
0.15  
3˚  
±
1.0  
2
1
1: Anode  
2: Cathode  
ø5.75 max.  
Electro-Optical Characteristics (Ta = 25˚C)  
Parameter  
Radiant power  
Symbol  
Conditions  
min  
typ  
max  
Unit  
mW  
nm  
nm  
V
PO  
λP  
∆λ  
VF  
IR  
Ct  
tr  
IF = 100mA  
5
7.5  
Peak emission wavelength  
Spectral half band width  
Forward voltage (DC)  
Reverse current (DC)  
Capacitance between pins  
Rise time  
IF = 100mA  
IF = 100mA  
IF = 100mA  
VR = 3V  
950  
50  
1.3  
1.6  
10  
µA  
pF  
VR = 0V, f = 1MHz  
60  
1
µs  
IFP = 100mA  
Fall time  
tf  
1
µs  
LN151F  
LN151L  
32  
8
deg.  
deg.  
Half-power angle  
θ
The angle in which radiant intencity is 50%  
1
Infrared Light Emitting Diodes  
LN151F, LN151L  
IF — Ta  
I
FP — Duty cycle  
IFP — VF  
120  
10 2  
10  
tw = 10µs  
Ta = 25˚C  
t
w = 10µs  
10 3  
f = 100Hz  
Ta = 25˚C  
100  
80  
10 2  
10  
1
60  
1
40  
10 –1  
10 –1  
10 –2  
20  
0
10 –2  
10 –1  
– 25  
0
20  
40  
60  
80  
100  
1
10  
10 2  
0
1
2
3
4
5
Ambient temperature Ta (˚C )  
Duty cycle (%)  
Forward voltage VF (V)  
VF — Ta  
PO — IFP  
PO — Ta  
1.6  
1.2  
0.8  
0.4  
0
10  
(1) tw = 10µs  
Duty Cycle = 0.1%  
(2) DC  
Ta = 25˚C  
IF = 50mA  
10 3  
IF = 100mA  
10 2  
10  
(1)  
50mA  
10mA  
1
(2)  
1
10 –1  
10 –2  
10 –1  
– 40  
– 40  
0
40  
80  
120  
1
10  
Pulse forward current IFP (mA)  
10 2  
10 3  
10 4  
0
40  
80  
Ambient temperature Ta (˚C )  
Ambient temperature Ta (˚C )  
Spectral characteristics  
Directivity characteristics  
Frequency characteristics  
0˚  
100  
10˚  
20˚  
100  
80  
60  
40  
20  
0
10 2  
10  
I
F = 100mA  
Ta = 25˚C  
Ta = 25˚C  
Ta = 25˚C  
90  
80  
LN151F  
30˚  
40˚  
70  
60  
50  
40  
1
LN151L  
50˚  
60˚  
30  
2 0  
10 –1  
70˚  
80˚  
90˚  
10 –2  
10  
800 850 900 950 1000 1050 1100  
10 2  
10 3  
10 4  
Wavelength λ (nm)  
Frequency f (kHz)  
2

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