LNC801PS [PANASONIC]
High Power Output Semiconductor Laser; 高功率输出半导体激光器型号: | LNC801PS |
厂家: | PANASONIC |
描述: | High Power Output Semiconductor Laser |
文件: | 总2页 (文件大小:44K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Semiconductor Laser
LNC801PS
High Power Output Semiconductor Laser
+0
ø5.6
Unit : mm
–0.025
ø4.3±0.1
Overview
2
ø3.55±0.1
The LNC801PS is a GaAlAs laser diode which provides stable,
continuous, single mode oscillation of near infrared light at room
temperature. This product can be used in a wide range of light source
applications, including laser printers, facsimiles, optical disk memory,
and optical information devices.
ø1.0 min.
LD
PD
3
1
Junction plane
Reference plane
1.0±0.1
Reference slot
Kovar glass
LD pellet
Features
Reference plane
Low threshold oscillation
Stable single horizontal mode oscillation
Built-in PIN photodiode for light output monitors
Light output is continuously variable as far as 60 mW
Supports direct modulation
ø1.2max.
3-ø0.45
2
1
3
1: LD Anode
2: Common Case
3: PD Cathode
ø2.0
Near infrared oscillating wavelength
Long lifetime, high reliability
Bottom view
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Radiant power
Symbol
PO
Ratings
60
Unit
mW
V
Laser
PIN
VR
1.5
Reverse voltage
VR (PIN)
Pd (PIN)
Topr
30
V
Power dissipation
100
mW
˚C
Operating ambient temperature
Storage temperature
–10 to +60
– 40 to +80
Tstg
˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Threshold current
Operating current
Operating voltage
Oscillation wavelength
Symbol
Ith
Conditions
min
10
typ
30
max
Unit
mA
CW
50
120
3.0
845
13
IOP
PO = 50mW
50
70
mA
VOP
PO = 50mW
2.0
830
10
V
λL
PO = 50mW
815
7
nm
*
Horizontal direction
Vertical direction
θ//
PO = 50mW
deg.
deg.
mW/mA
µA
Radiation angle
*
θ
PO = 50mW
18
0.6
25
28
Differential efficiency
Reverse current (DC)
PIN photo current
η
CW PO = 36mW/I(40mW – 4mW)
VR (PIN) = 5V
PO = 50mW, VR (PIN) = 5V
PO = 50mW
1.0
1.5
0.1
IR
IP
mA
X direction
Y direction
θX
θY
–2.0
–3.0
+2.0
+3.0
deg.
deg.
Optical axis
accuracy
PO = 50mW
Oscillation mode
Single horizontal mode
*
θ// and θ are the angles where the optical intencity is a half of its max. value.( half full angle )
1
Semiconductor Laser
LNC801PS
PO — IOP
I — V
Far field pattern
60
200
100
0
100
80
60
40
20
0
Ta = 25˚C
50
40
30
20
10
θ
θ//
–100
0
–200
0
40
80
120
–4
–2
0
2
4
40
20
0
20
40
Operating current IOP (mA)
Voltage V (V)
Angle θ (deg.)
Ith — Ta
I
OP — Ta
PO — Ta
10 2
10 3
100
80
60
40
20
0
PO = 50mW
10
10 2
1
– 10
10
– 10
10
30
50
70
10
30
50
70
– 10
10
30
50
70
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
Id — Ta
10 2
VR (PIN) = 30V
10
1
10 –1
10 –2
10 –3
– 10
10
30
50
70
Ambient temperature Ta (˚C )
2
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