LNC801PS [PANASONIC]

High Power Output Semiconductor Laser; 高功率输出半导体激光器
LNC801PS
型号: LNC801PS
厂家: PANASONIC    PANASONIC
描述:

High Power Output Semiconductor Laser
高功率输出半导体激光器

半导体
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Semiconductor Laser  
LNC801PS  
High Power Output Semiconductor Laser  
+0  
ø5.6  
Unit : mm  
–0.025  
ø4.3±0.1  
Overview  
2
ø3.55±0.1  
The LNC801PS is a GaAlAs laser diode which provides stable,  
continuous, single mode oscillation of near infrared light at room  
temperature. This product can be used in a wide range of light source  
applications, including laser printers, facsimiles, optical disk memory,  
and optical information devices.  
ø1.0 min.  
LD  
PD  
3
1
Junction plane  
Reference plane  
1.0±0.1  
Reference slot  
Kovar glass  
LD pellet  
Features  
Reference plane  
Low threshold oscillation  
Stable single horizontal mode oscillation  
Built-in PIN photodiode for light output monitors  
Light output is continuously variable as far as 60 mW  
Supports direct modulation  
ø1.2max.  
3-ø0.45  
2
1
3
1: LD Anode  
2: Common Case  
3: PD Cathode  
ø2.0  
Near infrared oscillating wavelength  
Long lifetime, high reliability  
Bottom view  
Absolute Maximum Ratings (Ta = 25˚C)  
Parameter  
Radiant power  
Symbol  
PO  
Ratings  
60  
Unit  
mW  
V
Laser  
PIN  
VR  
1.5  
Reverse voltage  
VR (PIN)  
Pd (PIN)  
Topr  
30  
V
Power dissipation  
100  
mW  
˚C  
Operating ambient temperature  
Storage temperature  
–10 to +60  
– 40 to +80  
Tstg  
˚C  
Electro-Optical Characteristics (Ta = 25˚C)  
Parameter  
Threshold current  
Operating current  
Operating voltage  
Oscillation wavelength  
Symbol  
Ith  
Conditions  
min  
10  
typ  
30  
max  
Unit  
mA  
CW  
50  
120  
3.0  
845  
13  
IOP  
PO = 50mW  
50  
70  
mA  
VOP  
PO = 50mW  
2.0  
830  
10  
V
λL  
PO = 50mW  
815  
7
nm  
*
Horizontal direction  
Vertical direction  
θ//  
PO = 50mW  
deg.  
deg.  
mW/mA  
µA  
Radiation angle  
*
θ
PO = 50mW  
18  
0.6  
25  
28  
Differential efficiency  
Reverse current (DC)  
PIN photo current  
η
CW PO = 36mW/I(40mW – 4mW)  
VR (PIN) = 5V  
PO = 50mW, VR (PIN) = 5V  
PO = 50mW  
1.0  
1.5  
0.1  
IR  
IP  
mA  
X direction  
Y direction  
θX  
θY  
–2.0  
–3.0  
+2.0  
+3.0  
deg.  
deg.  
Optical axis  
accuracy  
PO = 50mW  
Oscillation mode  
Single horizontal mode  
*
θ// and θ are the angles where the optical intencity is a half of its max. value.( half full angle )  
1
Semiconductor Laser  
LNC801PS  
PO — IOP  
I — V  
Far field pattern  
60  
200  
100  
0
100  
80  
60  
40  
20  
0
Ta = 25˚C  
50  
40  
30  
20  
10  
θ
θ//  
–100  
0
–200  
0
40  
80  
120  
–4  
–2  
0
2
4
40  
20  
0
20  
40  
Operating current IOP (mA)  
Voltage V (V)  
Angle θ (deg.)  
Ith — Ta  
I
OP — Ta  
PO — Ta  
10 2  
10 3  
100  
80  
60  
40  
20  
0
PO = 50mW  
10  
10 2  
1
– 10  
10  
– 10  
10  
30  
50  
70  
10  
30  
50  
70  
– 10  
10  
30  
50  
70  
Ambient temperature Ta (˚C )  
Ambient temperature Ta (˚C )  
Ambient temperature Ta (˚C )  
Id — Ta  
10 2  
VR (PIN) = 30V  
10  
1
10 –1  
10 –2  
10 –3  
– 10  
10  
30  
50  
70  
Ambient temperature Ta (˚C )  
2

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