MA3DF47 [PANASONIC]
Rectifier Diode, 1 Phase, 1 Element, 20A, 370V V(RRM), Silicon, TO-220AB, TO-220D-A1, 3 PIN;
| 型号： | MA3DF47 |
| 厂家： | 
PANASONIC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 20A, 370V V(RRM), Silicon, TO-220AB, TO-220D-A1, 3 PIN 软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总3页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Fast Recovery Diodes (FRD)
MA3DF47
Silicon mesa type
For high frequency rectification
For plasma display panel drive
Package
ꢀCode
Features
Super high speed switching characteristic (trr = 13 ns typ.)
Soft recovery
TO-220D-A1
ꢀPin Name
1: Anode
Absolute Maximum Ratings T = 25°C
a
2: athode
e
Parameter
Symbol
VRRM
VRSM
IF(AV)
IFR
Rating
370
Unit
V
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage *
1
460
V
Marking Symbol: MA3DF47
ꢀInternal Connection
2
Forward current (Average) *
2
A
3
Repetitive peak forward current *
A
4
Non-repetitive peak forward surge current *
IM
100
A
Junction temperature
Tj
150
°C
°C
1
2
3
Storage temperature
T
stg
–40 to +150
Note) 1: 60 Hz half-sine wave. (If repetive, RMS voltage < 370 V)
*
2: TC = 25°C
*
*
*
3: Pulse width < 10 mPeak vaue of the sine wave(If repeave, RMS current < 20 A)
4: 50 Hz sine wav1 cyle (Non-repetitive purre)
Electrical Caraeristics T = 25°C±3
a
Para
rward voage
Symbol
VF
Conditions
Min
Typ
Max
1.85
10
Unit
V
IF = 20A
1.65
Revrse curret
IRRM
VRR= 370 V
mA
1
*
trr
trr
IF = 0.5A, IR = 1.0A, Irr = 0.25A
13
25
20
Reverse recover
ns
2
*
IF = 40A, di/dt = –200A/ms, Irr = IR × 0.5A
30
Thermal resistance (j
Thermal resistance (j-a)
Rth(j-c)
Rth(j-a)
3.0
63
°C/W
°C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz
3. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
4. 1: R-loadtrr measurement circuit
*
50 Ω
50 Ω
trr
D.U.T.
IF
0.25 × IR
5.5 Ω
IR
2: L-loadtrr measurement circuit
*
230 µH
D.U.T.
Publication date: May 2009
SKJ00028AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3DF47
TO-220D-A1
Unit: mm
4.6 ±0.2
2.9 ±0.2
9.9 ±0.3
φ3.2 ±0.1
1.±0.2
1.6 ±0.2
2.6 ±0.1
0.8 ±0.1
0.40 ±0.05
2.54 ±0.3
5.08 ±0.5
1
2
3
2
SKJ00028AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability requied, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subjet to change wit notice for modification and/or im-
provement. At the final stage of your design, purchasingr use of the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions stisfy your requirements.
(5) When designing your equipment, comply with he ange f absolute maximing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirent etc.). Especiall, plee be ceful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and modeswitching. Otherwise, we will not be liable for any
defect which may arise later in your equpmen
Even when the products are used withthe guaanteed values, kinto he cosideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the sytems such as redundant design, arresting the spread of fire
or preventing glitch are recommin ordto prevent physicinjury, fre, social damaes, for example, by using the products.
(6) Comply with the instructios for se in rder to prevent breakdwn and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanicastress) at the time of andlig, mounting or at customer's process. When using products for which
damp-proof packinis reqired, stisfy the condtions, sch as shelf life and the elapsed time since first opening the packages.
(7) This book may e not eprinted or reprodhethr wholly or partially, without the prior written permission of our company.
2008080
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Rectifier Diode, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-220AB, TO-220D-A1, 3 PIN
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