MA3U760 [PANASONIC]
Silicon epitaxial planar type (cathode common); 硅外延平面型(阴极常见)型号: | MA3U760 |
厂家: | PANASONIC |
描述: | Silicon epitaxial planar type (cathode common) |
文件: | 总2页 (文件大小:42K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Schottky Barrier Diodes (SBD)
MA3U760
Silicon epitaxial planar type (cathode common)
Unit : mm
6.5 0.1
5.3 0.1
4.35 0.1
2.3 0.1
For switching power supply
0.5 0.1
I Features
•
•
•
•
Small U-type package and surface mounting
High breakdown voltage VR
Low forward rise voltage VF
1.0 0.1
0.1 0.05
0.93 0.1
0.5 0.1
Cathode common dual type
0.75 0.1
2.3 0.1
4.6 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VRRM
IF(AV)
IFSM
Rating
90
Unit
V
Repetitive peak reverse voltage
Average forward current
1
2
3
1 : Anode
2 : Cathode
(Common)
3 : Anode
5
A
Non-repetitive peak forward
surge current*
40
A
U-Type Package
Junction temperature
Storage temperature
Tj
−40 to +125
−40 to +125
°C
°C
Tstg
Note)
* : Half sine-wave: 10 ms/cycle
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Thermal resistance*
Symbol
IR
Conditions
Min
Typ
Max
Unit
mA
V
VR = 90 V, TC = 25°C
IF = 2.5 A, TC = 25°C
Between junction and case
1.0
VF
0.85
12.5
Rth(j-c)
°C/W
Note) 1. Rated input/output frequency: 1 000 MHz
2. * : TC = 25°C
1
MA3U760
Schottky Barrier Diodes (SBD)
IF VF
IR VR
VF Ta
4
4
10
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
75°C 25°C
Ta = 125°C
− 20°C
T
= 125°C
a
3
2
3
10
10
10
75°C
2
10
25°C
IF = 5 A
10
2.5 A
10
1 A
1
1
−1
−1
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
40
60
80
100 120
−40
0
40
80
120 160 200
(
)
( )
Reverse voltage VR V
Forward voltage VF
V
(
)
Ambient temperature Ta °C
IR Ta
Ct VR
4
3
2
400
300
200
100
0
10
10
10
f = 1 MHz
Ta = 25°C
VR = 90 V
30 V
10 V
10
1
−1
−40
10
0
20
40
60
80
100 120
0
40
80
120 160 200
( )
V
(
)
Reverse voltage VR
Ambient temperature Ta °C
2
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