MA6X718 [PANASONIC]
Silicon epitaxial planar type; 硅外延平面型
| 型号： | MA6X718 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon epitaxial planar type |
| 文件： | 总2页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diodes (SBD)
MA6X718
Silicon epitaxial planar type
Unit : mm
For switching circuits
2.8 −+ 00..32
0.65 0.15
1.5 −+ 00..2055
0.65 0.15
For wave detection circuit
1
2
6
5
I Features
4
3
•
•
•
Three MA3X704As in the same direction are contained in one
package
Optimum for low-voltage rectification because of its low forward
rise voltage (VF)
Optimum for high-frequency rectification because of its short re-
verse recovery time (trr)
0.1 to 0.3
0.4 0.2
I Absolute Maximum Ratings Ta = 25°C
1 : Cathode 1
2 : Cathode 2
3 : Cathode 3
4 : Anode 3
5 : Anode 2
6 : Anode 1
Parameter
Reverse voltage (DC)
Peak forward current*
Forward current (DC)*
Junction temperature
Storage temperature
Symbol
VR
Rating
Unit
V
30
150
Mini Type Package (6-pin)
IFM
IF
mA
mA
°C
Marking Symbol: M2N
Internal Connection
30
Tj
125
Tstg
−55 to +125
°C
6
5
4
1
2
3
Note)
* : Value in per diode
I Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
IR
Conditions
Min
Typ
Max
1
Unit
µA
V
VR = 30 V
IF = 1 mA
VF1
VF2
Ct
0.4
1.0
IF = 30 mA
V
Terminal capacitance
Reverse recovery time*
VR = 1 V, f = 1 MHz
1.5
1.0
pF
ns
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
Detection efficiency
η
Vin = 3 V(peak), f = 30 MHz
65
%
RL = 3.9 kΩ, CL = 10 pF
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
ꢀ
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
Output Pulse
trr
tr
t
10%
IF
t
A
90%
VR
Irr = 1 mA
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
1
MA6X718
Schottky Barrier Diodes (SBD)
IF VF
IR VR
VF Ta
3
3
10
10
1.0
0.8
0.6
0.4
0.2
0
75°C 25°C
2
2
10
10
Ta = 125°C
IF = 30 mA
Ta = 125°C
− 20°C
10
10
75°C
25°C
10 mA
1 mA
1
1
−1
−1
10
10
−2
−2
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
(
30
−40
0
40
80
120
160
(
)
)
V
Forward voltage VF
V
Ambient temperature VR
(
)
Ambient temperature Ta °C
Ct VR
IR Ta
3
2
2.4
2.0
1.6
1.2
0.8
0.4
0
10
10
f = 1 MHz
Ta = 25°C
VR = 30 V
3 V
1 V
10
1
−1
10
−2
−40
10
0
5
10
15
20
25
30
0
40
80
120 160 200
(
)
Reverse voltage VR
V
(
)
Ambient temperature Ta °C
2
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