NP043AN [PANASONIC]
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN;
| 型号： | NP043AN |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
NP043AN
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
For digital circuits
0.12+0.03
-
0.02
6
5
4
Features
0 to 0.02
Reducation of the mounting area and assembly cost by one half
Maximum package height (0.4 mm) contributes to develop thinner equipmen
1
2
3
(0.35) (0.35)
.00 0.05
Basic Part Number
UNR31AN + UNR32AN
No.1 lead
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
R
Unit
Collector-base voltage
(Emitter open)
VO
50
V
1: Emitter (Tr1)
4: Emitter (Tr2)
5: Base (Tr2)
2: Base (Tr1)
Collector-emitter voltage
(Base open)
Tr1
Tr2
3: Collector (Tr2)
6: Collector (Tr1)
VCE
IC
0
80
V
mA
V
SSSMini6-F1 Package
Collector current
Marking Symbol: HC
Internal Connection
Collector-base voage
(Emitter open)
VCB
-50
(C1) (B2) (E2)
6
5
4
Collecor-emter vltage
Base ope
VCE
V
-50
R1
R2
4.7 kΩ
4
7 kΩ
Tr1
Colletor current
IC
PT
Tj
mA
mW
°C
-80
125
Tr2
4.7 kΩ
R2
47 kΩ
R1
Total power dissipatio*
1
2
3
Overall Junction ature
Stora
125
(E1) (B1) (C2)
T
stg
–55 to +125
°C
Note) : Measuring ot 17 mm × 10 mm × 1 mm
*
Publication date: April 2007
SJJ00350AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
NP043AN
Electrical Characteristics Ta = 25°C±3°C
Tr1
Parameter
Symbol
VCBO IC = 10 mA, IE = 0
VCEO IC = 2 mA, IB = 0
Conditions
Min
50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open) *
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
50
V
ICBO
ICEO
IEBO
hFE
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
0.1
0.5
mA
mA
mA
0.2
VCE = 10 V, IC = 5 mA
80
400
0.25
V
VCE(sat) IC = 10 mA, IB = 0.3
VOH
VOL
R1
VCC = 5 V, V= 0.5 V, RL = 1 kW
4.9
V
Output voltage low-level
VCC = 5 V, VB = 2.5 V, RL = 1 kW
0.2
+30%
0.12
V
Input resistance
0%
0.08
4.7
0.10
150
kW
Resistance ratio
R1 / R2
fT
Transition frequency
V0 V, IE = -2 mA, f = 20MHz
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSL STANDARD JIS C 700 measuring methods for transistors.
2. : Pulse measurement
*
Tr2
Parameter
Symbol
Conditions
Min
–50
–50
Typ
Max
Unit
V
Collector-base voltage (Emiter open)
Collector-emitter voltage (Bae open)
Collector-base cutoff urren(Emitter open)
Collectomittecutorent (Base opn)
Emitter-bae ctoff nt (Collector opn)
Fward currnt transfer ratio
Collecor-emitter saturtion votage
Output voltage
VCBO IC = –10 mA, IE = 0
V= –2 mA, IB = 0
V
IC
IBO
hFE
VCB = –50 V, IE = 0
VCE = –50 V, IB = 0
VEB = –6 V, IC = 0
– 0.1
– 0.5
– 0.2
400
mA
mA
mA
VCE = –10 V, IC = –5 mA
80
VCE(sat) IC = –10 mA, IB = – 0.3 mA
– 0.25
V
VOH
VOL
R1
VCC = –5 V, VB = – 0.5 V, RL = 1 kW
VCC = –5 V, VB = –2.5 V, RL = 1 kW
–4.9
V
Output voltage low
– 0.2
+30%
0.12
V
Input resistance
–30%
0.08
4.7
0.10
80
kW
Resistance ratio
R1 / R2
fT
Transition frequency
VCB = –10 V, IE = 1 mA, f = 200 MHz
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
SJJ00350AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions saisfy your requirements.
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita
Electric ndurial Co., Ltd.
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