PUB4119 [PANASONIC]

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10;
PUB4119
型号: PUB4119
厂家: PANASONIC    PANASONIC
描述:

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10

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文件: 总3页 (文件大小:87K)
中文:  中文翻译
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Power Transistor Arrays  
PUB4119 (PU4119), PUB4419 (PU4419)  
Silicon NPN triple diffusion planar type darlington  
For power amplification/switching  
Unit: mm  
Complementary to PUB4219 (PU4219), PUB4519 (PU4519)  
25.3 0.2  
4.0 0.2  
Features  
High forward current transfer ratio hFE  
High-speed switching  
PUB4119 (PU4119): NPN 4 elements  
0.8 0.25  
0.5 0.15  
PUB4419 (PU4419): NPN 2 elements × 2  
0.5 0.15  
1.0 0.25  
Absolute Maximum Ratings TC = 25°C  
2.54 0.2  
Parameter  
Symbol  
Rating  
Unit  
V
9 × 2.54 = 22.86 0.25  
1: Emitter  
2: Base  
Collector-base voltage (Emitter open) VCBO  
60  
C 1.5 0.5  
3: Collector  
4: Base  
5: Collector  
6: Base  
7: Collector  
8: Base  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
VCEO  
VEBO  
IC  
60  
V
5
V
1 2 3 4 5 6 7 8 9 10  
2
A
Peak collector current  
Collector power dissipation  
Ta = 25°C  
ICP  
4
15  
A
9: Collector  
10:Emitter  
SIP10-A1 Package  
PC  
W
3.5  
Junction temperature  
Tj  
150  
°C  
°C  
Storage temperature  
Tstg  
55 to +150  
Electrical Characteristics TC = 25°C 3°C  
Parameter  
Symbol  
VCEO  
VBE  
Conditions  
Min  
Typ  
Max  
Unit  
V
Collector-emitter voltage (Base open)  
Base-emitter voltage  
IC = 30 mA, IB = 0  
60  
VCE = 4 V, IC = 2 A  
VCB = 60 V, IE = 0  
VCE = 30 V, IB = 0  
VEB = 5 V, IC = 0  
VCE = 4 V, IC = 1 A  
VCE = 4 V, IC = 2 A  
2.8  
1
V
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
ICBO  
mA  
mA  
mA  
ICEO  
2
IEBO  
2
hFE1  
1000  
1000  
*
hFE2  
10000  
2.5  
Collector-emitter saturation voltage  
Transition frequency  
Turn-on time  
VCE(sat) IC = 2 A, IB = 8 mA  
V
MHz  
µs  
µs  
µs  
fT  
ton  
tstg  
tf  
VCE = 10 V, IC = 0.5 A, f = 1 MHz  
20  
0.5  
4.0  
1.0  
IC = 2 A  
Storage time  
IB1 = 8 mA, IB2 = −8 mA  
VCC = 50 V  
Fall time  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Free  
P
Q
hFE  
1000 to 10000 2000 to 10 000 1000 to 5000  
Internal Connection  
PUB4119  
PUB4419  
3
5
7
9
3
5
7
9
4
6
8
4
6
8
2
1
2
1
10  
10  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: March 2004  
SJK00061AED  
1
PUB4119, PUB4419  
PC Ta  
IC VCE  
IC VBE  
10  
8
20  
5
4
3
2
1
0
( )  
( )  
1
2
TC = Ta  
VCE = 4 V  
TC = 25°C  
With a 50 × 50 × 2 mm  
Al heat sink  
Without heat sink  
( )  
3
16  
12  
8
( )  
1
IB = 2.0 mA  
TC = 100°C  
1.8 mA  
1.6 mA  
1.4 mA  
1.2 mA  
1.0 mA  
0.8 mA  
0.6 mA  
0.4 mA  
25°C  
25°C  
6
4
( )  
2
0.2 mA  
( )  
3
4
2
0
0
0
0.8  
1.6  
2.4  
3.2  
0
40  
80  
120  
160  
0
1
2
3
4
5
(
6
(
)
Ambient temperature Ta °C  
( )  
V
)
V
Base-emitter voltage VBE  
Collector-emitter voltage VCE  
VCE(sat) IC  
hFE IC  
Cob VCB  
100  
10  
1
105  
104  
103  
102  
104  
103  
102  
10  
I
C / IB = 250  
VCE = 4 V  
IE = 0  
f = 1 MHz  
TC = 25°C  
TC = 100°C  
25°C  
25°C  
TC = −25°C  
100°C  
25°C  
0.1  
0.01  
0.01  
10  
0.01  
1
0.1  
0.1  
1
10  
0.1  
1
10  
1
10  
100  
(
)
(
)
( )  
Collector-base voltage VCB V  
Collector current IC  
A
Collector current IC  
A
Safe operation area  
100  
Non repetitve pulse  
(
)
TC = 25°C Per circuit  
10  
1
ICP  
t = 1 ms  
t = 10 ms  
0.1  
0.01  
1
10  
100  
1000  
(
)
V
Collector-emitter voltage VCE  
SJK00061AED  
2
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of  
the products or technical information described in this material and controlled under the "Foreign Exchange  
and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteristics and  
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right  
or any other rights owned by our company or a third party, nor grants any license.  
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical  
information as described in this material.  
(4) The products described in this material are intended to be used for standard applications or general elec-  
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-  
hold appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-  
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are  
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human  
body.  
Any applications other than the standard applications intended.  
(5) The products and product specifications described in this material are subject to change without notice for  
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,  
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-  
tions satisfy your requirements.  
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-  
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not  
be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of  
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such  
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent  
physical injury, fire, social damages, for example, by using the products.  
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life  
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually  
exchanged.  
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2003 SEP  

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