SD1450 [PANASONIC]
Silicon NPN epitaxial planer type(For low-frequency amplification); NPN硅外延平面型（低频放大）
| 型号： | SD1450 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planer type(For low-frequency amplification) |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD1450
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
4.0±0.2
Features
Optimum for high-density mounting.
■
●
●
Allowing supply with the radial taping.
●
Low collector to emitter saturation voltage VCE(sat)
.
marking
Absolute Maximum Ratings (Ta=25˚C)
■
1
2
3
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
25
20
V
1.27 1.27
2.54±0.15
12
V
1
0.5
A
1:Emitter
2:Collector
3:Base
IC
A
EIAJ:SC–72
New S Type Package
Collector power dissipation (Ta=25˚C)
Junction temperature
Storage temperature
PC
300
mW
˚C
˚C
Tj
150
Tstg
–55 ~ +150
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
nA
V
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCB = 25V, IE = 0
100
VCBO
VCEO
VEBO
IC = 10µA, IE = 0
25
20
I
C = 1mA, IB = 0
V
IE = 10µA, IC = 0
12
V
*1
hFE1
hFE2
VCE = 2V, IC = 0.5A*2
VCE = 2V, IC = 1A*2
200
60
800
Forward current transfer ratio
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 500mA, IB = 20mA*2
IC = 500mA, IB = 20mA*2
0.13
0.4
1.2
V
V
Transition frequency
Collector output capacitance
ON resistanse
fT
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
200
10
MHz
pF
Cob
Ron
*3
0.6
Ω
*2 Pulse measurement
*1
*3
h
Rank classification
R
on
Measurement circuit
FE1
1kΩ
Rank
hFE1
R
S
T
IB=1mA
200 ~ 350
300 ~ 500
400 ~ 800
f=1kHz
V=0.3V
VB
VA
VV
VB
Ron=
✕1000(Ω)
VA–VB
1
Transistor
2SD1450
PC — Ta
IC — VCE
VBE(sat) — IC
500
400
300
200
100
0
2.4
2.0
1.6
1.2
0.8
0.4
0
100
IC/IB=10
Ta=25˚C
30
10
IB=4.0mA
3.5mA
3
1
25˚C
Ta=–25˚C
3.0mA
2.5mA
75˚C
2.0mA
0.3
0.1
1.5mA
1.0mA
0.5mA
0.03
0.01
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.01 0.03
0.1
0.3
1
3
10
(
)
( )
V
( )
A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Collector current IC
VCE(sat) — IC
hFE — IC
fT — IE
100
1200
400
350
300
250
200
150
100
50
IC/IB=25
VCB=10V
Ta=25˚C
VCE=2V
30
10
1000
800
600
400
200
0
3
1
Ta=75˚C
25˚C
–25˚C
Ta=75˚C
25˚C
0.3
0.1
–25˚C
0.03
0.01
0
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
– 0.1 – 0.3
–1
–3
–10 –30 –100
( )
A
( )
A
(
)
Collector current IC
Collector current IC
Emitter current IE mA
Cob — VCB
NV — IC
20
16
12
8
120
100
80
60
40
20
0
VCE=10V
GV=80dB
Function=FLAT
IE=0
f=1MHz
Ta=25˚C
Rg=100kΩ
22kΩ
5kΩ
4
0
1
3
10
30
100
0.01
0.03
0.1
0.3
1
( )
V
(
)
Collector to base voltage VCB
Collector current IC mA
2
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