UNR2154 [PANASONIC]
Silicon PNP epitaxial planer transistor; PNP硅外延平面晶体管
| 型号： | UNR2154 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon PNP epitaxial planer transistor |
| 文件： | 总3页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors with built-in Resistor
UNR2154 (UN2154)
Silicon PNP epitaxial planer transistor
Unit: mm
2.8 +–00..32
0.65±0.15
1.5 +–00..0255
0.65±0.15
For digital circuits
1
2
Features
High forward current transfer ratio hFE
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
■
■
.
3
■
■
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
0.1 to 0.3
Absolute Maximum Ratings (Ta=25˚C)
■
0.4±0.2
Parameter
Symbol
VCBO
VCEO
IC
Ratings
–30
Unit
V
1:Base
2:Emitter
Collector to base voltage
Collector to emitter voltage
Collector current
EIAJ:SC-59
Mini Type Package
3:Collector
–30
V
–100
mA
mW
˚C
Marking Symbol: EV
Internal Connection
Total power dissipation
Junction temperature
Storage temperature
PT
200
Tj
150
Tstg
–55 to +150
˚C
C
E
(
)
R1 10kΩ
B
R2
47kΩ
(
)
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
min
–30
–30
typ
max
Unit
V
Collector to base voltage
IC = –10µA, IE = 0
Collector to emitter voltage
IC = –2mA, IB = 0
V
VCB = –30V, IE = 0
– 0.1
– 0.5
– 0.1
µA
µA
mA
—
Collector cutoff current
ICEO
VCE = –30V, IB = 0
Emitter cutoff current
IEBO
VEB = –3V, IC = 0
Forward current transfer ratio
hFE
VCE = –10V, IC = –5mA
IC = –50mA, IB = – 0.33mA
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
80
Collector to emitter saturation voltage VCE(sat)
– 0.5
–1.2
V
Output voltage high level
Output voltage low level
Input resistance
VOH
VOL
R1
–4.9
–30%
V
– 0.2
V
10
0.213
80
+30%
kΩ
—
Resistance ratio
R1/R2
fT
Transition frequency
VCB = –10V, IE = 1mA, f = 200MHz
MHz
Note) The part number in the parenthesis shows conventional part number.
1
Transistors with built-in Resistor
UNR2154
PT — Ta
IC — VCE
VCE(sat) — IC
250
200
150
100
50
–200
–175
–150
–125
–100
–75
–100
–10
IC/IB=10
IB=–1.0mA
Ta=25˚C
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–1
–0.4mA
–0.3mA
25˚C
Ta=75˚C
–25˚C
–50
–25
0
–0.2mA
–0.1
–0.1mA
0
–0.01
0
–2
–4
–6
–8
–10 –12
0
20 40 60 80 100 120 140 160
–1
–10
–100
–1000
(
V
)
(
)
(
)
Collector to emitter voltage VCE
Ambient temperature Ta ˚C
Collector current IC mA
hFE — IC
Cob — VCB
IO — VIN
300
250
200
150
100
50
6
5
4
3
2
1
0
–10000
–1000
–100
–10
VO=–5V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
0
–1
–1
–0.4
–10
–100
–1000
–1
–10
–100
–0.6
–0.8
–1
–1.2
–1.4
(
)
(
V
)
( )
Input voltage VIN V
Collector current IC mA
Collector to base voltage VCB
VIN — IO
–100
VO=–0.2V
Ta=25˚C
–10
–1
–0.1
–0.01
–0.1
–1
–10
–100
(
)
Output current IO mA
2
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2001 MAR
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