XN01504 [PANASONIC]
Silicon NPN epitaxial planar type; NPN硅外延平面型
| 型号： | XN01504 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planar type |
| 文件： | 总3页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XN01504 (XN1504)
Silicon NPN epitaxial planar type
Unit: mm
+0.20
–0.05
1.9 0.1
(0.95) (0.95)
2.90
+0.10
–0.06
0.16
For amplification of low-frequency output
3
2
4
5
■ Features
• Two elements incorporated into one package
(Emitter-coupled transistors)
1
+0.10
–0.05
0.30
• Reduction of the mounting area and assembly cost by one half
10˚
■ Basic Part Number
• 2SD1915F × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
50
Unit
V
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
4: Emitter
5: Base (Tr1)
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
20
V
EIAJ: SC-74A
Mini5-G1 Package
25
V
Marking Symbol: 5S
Collector current
IC
ICP
PT
300
mA
mA
mW
°C
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
500
Internal Connection
300
3
Tr2
2
4
5
Tj
150
Tstg
−55 to +150
°C
Tr1
1
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCEO
VBE
Conditions
Min
Typ
Max
Unit
V
Collector-emitter voltage (Base open)
Base-emitter voltage
IC = 1 mA, IB = 0
20
VCE = 2 V, IC = 4 mA
VCB = 50 V, IE = 0
VEB = 25 V, IC = 0
VCE = 2 V, IC = 4 mA
0.6
V
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
ICBO
0.1
0.1
µA
µA
IEBO
hFE
500
2500
1
hFE ratio *
hFE(Small VCE = 2 V, IC = 4 mA
/Large)
0.50
0.99
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 30 mA, IB = 3 mA
0.1
7
V
MHz
pF
fT
VCB = 6 V, IE = −4 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
80
Collector output capacitance
Cob
(Common base, input open circuited)
2
ON resistanse *
Ron
1.0
Ω
1 kΩ
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL
STANDARD JIS C 7030 measuring methods for transistors.
IB = 5 mA
f = 1 kHz
V = 0.3 V
2. 1: Ratio between 2 elements
*
2: Ron start resistance test circuit
*
VB VV VA
VB × 1000
VA − VB
Ron
=
(Ω)
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00029BED
1
XN01504
PT Ta
IC VCE
IC VBE
120
100
80
60
40
20
0
24
20
16
12
8
500
400
300
200
100
0
VCE = 2 V
25°C
Ta = 25°C
IB = 10 µA
8 µA
Ta = 75°C
−25°C
6 µA
4 µA
4
2 µA
0
0
0.2
0.4
0.6
0.8
1.0
0
40
80
120
160
0
2
4
6
8
10
12
(
)
V
Base-emitter voltage VBE
(
)
(
Collector-emitter voltage VCE V
)
Ambient temperature Ta °C
VCE(sat) IC
hFE IC
fT IE
10
1
200
160
120
80
2000
1 600
1 200
800
400
0
VCB = 6 V
Ta = 25°C
IC / IB = 10
VCE = 2 V
Ta = 75°C
25°C
−25°C
0.1
Ta = 75°C
−25°C
25°C
0.01
0.001
40
0
− 0.1
−1
−10
−100
0.1
1
10
100
0.1
1
10
100
(
)
(
)
Emitter current IE mA
Collector current IC mA
(
)
Collector current IC mA
Cob VCB
20
f = 1 MHz
Ta = 25°C
16
12
8
4
0
1
10
100
(
)
V
Collector-base voltage VCB
SJJ00029BED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
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information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
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• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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