XN6A554 [PANASONIC]
Silicon NPN epitaxial planer transistor; NPN硅外延平面晶体管
| 型号： | XN6A554 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planer transistor |
| 文件： | 总2页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XN6A554
Silicon NPN epitaxial planer transistor
Unit: mm
2.8+–00..32
For high speed switching
0.65±0.15
1.5+–00..0255
0.65±0.15
1
2
6
Features
■
5
4
●
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
3
●
●
Low VCE(sat)
.
Basic Part Number of Element
2SC3757 × 2 elements
■
0.1 to 0.3
●
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Collector (Tr2)
4 : Emitter (Tr2)
5 : Emitter (Tr1)
6 : Base (Tr1)
EIAJ : SC–74
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Mini Type Package (6–pin)
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Total power dissipation
40
40
5
V
Rating
of
element
Marking Symbol: DT
Internal Connection
V
100
mA
mA
mW
˚C
ICP
300
Tr1
6
1
2
3
PT
300
5
Overall Junction temperature
Storage temperature
Tj
150
Tstg
–55 to +150
˚C
4
Tr2
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
IEBO
hFE
Conditions
min
typ
max
0.1
Unit
µA
Collector cutoff current
VCB = 40V, IE = 0
Emitter cutoff current
VEB = 4V, IC = 0
0.1
µA
Forward current transfer ratio
Forward current transfer hFE ratio
VCE = 1V, IC = 10mA
60
320
hFE (small/large)*1 VCE = 1V, IC = 10mA
0.5
0.99
0.17
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 10mA, IB = 1mA
0.25
1.0
V
V
IC = 10mA, IB = 1mA
Transition frequency
Collector output capacitance
Turn-off time
fT
VCE = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
450
2
MHz
pF
Cob
ton
toff
tstg
6
17
17
10
*2
Turn-on time
ns
Storage time
*1 Ratio between 2 elements
*2 Test Circuits
1
Composite Transistors
XN6A554
PT — Ta
ton, toff Test Circuit
tstg Test Circuit
500
400
300
200
100
0
0.1µF
0.1µF
Vout
A
Vout
1kΩ
910Ω
500Ω
220Ω
0.1µF
90Ω
50Ω
Vin=10V
3.3kΩ
Vin=10V
50Ω
500Ω
3.3kΩ
Vbb
–3V
VCC=10V
V
CC=3V
50Ω
Vbb=2V
=
0
Vin
10%
90%
10%
Vin
Vin
10%
90%
Vout
Vout
10%
Vout
tstg
(Wave form at A)
ton
toff
0
1
1
40
80
120
160
)
(
Ambient temperature Ta ˚C
IC — VCE
VCE(sat) — IC
VBE(sat) — IC
120
100
80
100
100
IC/IB=10
IC/IB=10
Ta=25˚C
30
10
30
10
IB=3.0mA
2.5mA
2.0mA
1.5mA
3
1
3
1
25˚C
Ta=–25˚C
75˚C
60
1.0mA
0.5mA
Ta=75˚C
25˚C
0.3
0.1
0.3
0.1
40
–25˚C
20
0.03
0.01
0.03
0.01
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1 0.3
1
3
10
30
100
3
10
30
100 300 1000
(
)
V
(
)
(
)
Collector to emitter voltage VCE
Collector current IC mA
Collector current IC mA
hFE — IC
fT — IE
Cob — VCB
600
500
400
300
200
100
0
600
500
400
300
200
100
0
6
5
4
3
2
1
0
f=1MHz
IE=0
Ta=25˚C
VCE=1V
VCE=10V
Ta=25˚C
Ta=75˚C
25˚C
–25˚C
0.1 0.3
1
3
10
30
100
–1
–3
–10 –30 –100 –300 –1000
3
10
( )
Collector to base voltage VCB V
30
100
(
)
(
)
Collector current IC mA
Emitter current IE mA
2
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