MBR3060PT [PANJIT]
30 AMPERES SCHOTTKY BARRIER RECTIFIERS; 30安培肖特基二极管
| 型号： | MBR3060PT |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 30 AMPERES SCHOTTKY BARRIER RECTIFIERS |
| 文件： | 总2页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR3020PT~MBR30200PT
30 AMPERES SCHOTTKY BARRIER RECTIFIERS
Unit: inch (mm)
TO-3P
VOLTAGE
30 Amperes
20 to 200 Volts CURRENT
FEATURES
.640(16.25)
.620(15.75)
.199(5.05)
.175(4.45)
.142(3.6)
.125(3.2)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
.095(2.4)
.126(3.2)
.110(2.8)
• Component are in compliance with EU RoHS 2002/95/EC directives
.050(1.25)
.045(1.15)
.030(0.75)
.017(0.45)
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
MECHANICALDATA
AC
AC
Case: TO-3P molded plastic
Positive CT
Terminals: solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.2 ounces, 5.6 grams.
MAXIMUMRATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
M B R
M B R
M B R
M B R
M B R
M B R
M B R
M B R
M B R
M B R
PA R A M E TE R
S YM B O L
U N ITS
V
3020P T 3030P T 3040P T 3045P T 3050P T 3060P T 3080P T 30100P T 30150P T 30200P T
M axim um R ecurrent P eak R everse Voltage
V
V
R R M
20
14
20
30
21
30
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
100
70
150
105
150
200
140
200
M axim um R M S Voltage
R M
S
V
V
A
A
V
M axim um D C B locking Voltage
V
D C
100
M axim um A verage Forw ard C urrent (S ee fig.1)
IAV
30
200
0.75
P eak Forw ard S urge C urrent :8.3m s single half sine-
w ave superim posed on rated load(JE D E C m ethod)
IFS M
M axim um Forw ard Voltage at 15A , per leg
M axim um D C R everse C urrent Tc=25 O C
V
F
0.65
0.8
0.92
0.1
20
IR
m A
at R ated D C B locking Voltage
T
c
=125O
C
TypicalTherm alR esistance
R θJC
1.4
O C / W
O perating Junction Tem perature R ange
S torage Tem perature R ange
T
J
-50 TO
-50 TO
+
+
150
175
O C
T
S TG
O C
Notes :
Both Bonding and Chip structure are available.
PAGE . 1
STAD-DEC.22.2006
MBR3020PT~MBR30200PT
RATING AND CHARACTERISTIC CURVES
50.0
40
20,30,40,45V
10
8
6
50,60,80,100V
40.0
30.0
4
2
1.0
.8
20.0
.6
MBR3020PT~MBR3045PT
10.0
MBR3050PT~MBR30100PT
.4
.2
.1
0
0
50
CASE TEMPERATURE, OC
100
150
.4
.5
.6
.7
.8
.9 1.0 1.1
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.2- TYPICAL INSTANEOUS FORWARD
CHARACTERISTIC
Fig.1- FORWARD CURRENT DERATING CURVE
10
275
250
225
200
175
150
125
100
75
TC=125OC
1.0
TC=75OC
0.1
TC=25OC
0.01
50
25
0.001
20
40
60
80
100
0
1
2
5
10
20
50
100
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE, %
NO. OF CYCLE AT 60HZ
Fig.4- MAXIMUM NON-REPETITIVE SURGE
CURRENT
Fig.3- TYPICAL REVERSE CHARACTERISTICS
PAGE . 2
STAD-DEC.22.2006
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