PJD14P06-AU [PANJIT]
60V P-Channel Enhancement Mode MOSFET;型号: | PJD14P06-AU |
厂家: | PAN JIT INTERNATIONAL INC. |
描述: | 60V P-Channel Enhancement Mode MOSFET |
文件: | 总8页 (文件大小:413K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PPJD14P06-AU
60V P-Channel Enhancement Mode MOSFET
-60 V
-14 A
Voltage
Current
Features
RDS(ON), VGS@-10V,ID@-7A<115mΩ
RDS(ON), VGS@-4.5V,ID@-3.5A<160mΩ
High switching speed
TO-252
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Acqire quality system certificate : TS16949
AEC-Q101 qualified
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: TO-252 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0104 ounces, 0.297grams
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
SYMBOL
LIMIT
UNITS
VDS
VGS
ID
-60
+20
-14
V
V
Gate-Source Voltage
Continuous Drain Current (Note 1)
A
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 2)
IDM
EAS
-32
A
42
mJ
TC=25oC
Derate above 25oC
45
W
Power Dissipation
PD
0.3
W/oC
oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
TJ,TSTG
-55~175
oC/W
RθJC
RθJA
3.33
62.5
-
-
Junction to Case
Junction to Ambient (Note 1)
Limited only By Maximum Junction Temperature
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Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(th)
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
VGS=-10V,ID=-7A
VGS=-4.5V,ID=-3.5A
VDS=-55V,VGS=0V
VGS=+20V,VDS=0V
IS=-1A,VGS=0V
-60
-
-
V
V
-2.2
-2.76
96
-3.2
115
160
-1.0
+100
-1.0
-
-
-
-
-
Drain-Source On-State Resistance
RDS(on)
mΩ
125
-0.01
+10
-0.78
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Diode Forward Voltage
Dynamic (Note 5)
IDSS
IGSS
VSD
uA
nA
V
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
13.4
3.4
3.0
685
63
-
-
-
-
-
-
-
-
-
-
VDS=-30V, ID=-12A,
VGS=-10V (Note 2,3)
Gate-Source Charge
nC
pF
Gate-Drain Charge
Input Capacitance
VDS=-30V, VGS=0V,
f=1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
29
7
VDS=-30V,RL=2.5Ω,
Turn-On Rise Time
40
VGS=-10V, RG=6.2Ω
(Note 2,3)
ns
Turn-Off Delay Time
td(off)
tf
23
Turn-Off Fall Time
10
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
IS
---
-
-
-10
A
trr
-
-
28
42
-
-
ns
VGS=0V, IS=-12A
dIF/ dt=-100A/us (Note 2)
Qrr
nC
NOTES :
1. The test by surface mounted on 1 inch FR4 board with 2oz copper.
2. L=0.1mH, IAS=-29A, VGS=-10V, VDS=-25V, RG=25 ohm, Starting TJ=25oC
3. The Power dissipation is limit by 150℃ junction temperature.
4. Pulse width<300us, Duty cycle<2%
5. Guaranteed by design, not subject to production testing.
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TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.4 On-Resistance vs. Junction temperature
Fig.6 Body Diode Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.5 On-Resistance Variation with VGS.
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TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature.
Fig.10 Capacitance vs. Drain-Source Voltage.
Fig.11 Maximum Safe Operating Area
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TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Thermal Transient Impedance
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Packaging Information
TO-252 Dimension
.
Unit: mm
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PART NO PACKING CODE VERSION
Part No Packing Code
Package Type
Packing type
Marking
Version
PJD14P06-AU_L2_000A1
TO-252
3,000pcs / 13” reel
D14P06
Halogen free
MOUNTING PAD LAYOUT
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without notification. Please refer to our website for the latest document.
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including damages incidentally and consequentially occurred.
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particular purpose, non-infringement and merchantability.
● Applications shown on the herein document are examples of standard use and operation. Customers are
responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no
representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
● The products shown herein are not designed and authorized for equipments requiring high level of reliability or
relating to human life and for any applications concerning life-saving or life-sustaining, such as medical
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