PJSD03TG [PANJIT]
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS; 单线TVS二极管用于ESD保护的便携式电子产品
| 型号： | PJSD03TG |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS |
| 文件： | 总5页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PJSD03TG~PJSD36TG
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
100 Watts
POWER
3~36 Volts
VOLTAGE
FEATURES
• 100 Watts peak pules power( tp=8/20µs)
• Small package for use in portable electronics
• Suitable replacement for MLV’S in ESD protection applications
• Low clamping voltage and leakage current
• In compliance with EU RoHS 2002/95/EC directives
APPLICATIONS
• Case: SOD-723 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx.Weight : 0.00077 gram
• Marking : PJSD03TG: FS
PJSD05TG : FT
PJSD08TG : FU
PJSD12TG : FV
PJSD15TG : FW
PJSD24TG : FX
PJSD36TG : FY
MAXIMUMRATINGSANDELECTRICALCHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating
Peak Pulse Power (tp=8/20 µs)
ESD Voltage
Symbol
PPK
Value
100
Units
W
25
KV
OC
VESD
TJ
Operating Temperature
-50OC to 150 O
C
C
Storage Temperature
-50OC to 150 O
OC
TSTG
ELECTRICAL CHARA CTERISTICS
PJSD03TG
Parameter
Symbol
VRWM
VBR
Conditions
-
Min.
Typical
Max.
3.3
-
Units
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
4
-
-
-
-
V
V
IBR=1mA
VR=3.3V
µA
IR
125
Clamping Voltage(8/20 µs)
VC
IPP=1A
-
-
7
V
Off State Junction Capacitance
Off State Junction Capacitance
CJ
CJ
0Vdc Bias=f=1MHz
3Vdc Bias=f=1MHz
-
-
180
100
-
-
pF
pF
PAGE . 1
STAD-MAY.18.2007
PJSD03TG~PJSD36TG
PJSD05TG
Parameter
Symbol
VRW M
VBR
Conditions
-
Min.
Typical
Max.
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
6
-
-
-
-
5
-
IBR=1mA
VR=5V
V
µA
IR
10
Clamping Voltage(8/20 µs)
VC
IPP=8.5A
-
-
V
9.8
Off State Junction Capacitance
Off State Junction Capacitance
CJ
CJ
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
-
-
-
pF
pF
110
65
-
PJSD08TG
Parameter
Symbol
VRW M
VBR
Conditions
-
Min.
Typical
Max.
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
8.5
-
-
-
-
8
-
IBR=1mA
VR=8V
V
µA
IR
10
Clamping Voltage(8/20 µs)
VC
IPP=7.5A
-
-
13.4
V
Off State Junction Capacitance
Off State Junction Capacitance
CJ
CJ
0Vdc Bias=f=1MHz
8Vdc Bias=f=1MHz
-
-
pF
pF
-
70
40
-
PJSD12TG
Parameter
Symbol
VRW M
VBR
Conditions
-
Min.
Typical
Max.
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
13.3
-
-
-
-
12
-
IBR=1mA
VR=12V
V
µA
IR
1
Clamping Voltage(8/20 µs)
VC
IPP=6.7A
-
-
20
V
Off State Junction Capacitance
Off State Junction Capacitance
CJ
CJ
0Vdc Bias=f=1MHz
12Vdc Bias=f=1MHz
-
-
-
pF
46
30
-
pF
PJSD15TG
Parameter
Symbol
VRW M
VBR
Conditions
-
Min.
Typical
Max.
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
16.7
-
-
-
-
15
-
IBR=1mA
VR=15V
V
µA
IR
1
Clamping Voltage(8/20 µs)
VC
IPP=6A
-
-
24
V
Off State Junction Capacitance
Off State Junction Capacitance
CJ
CJ
0Vdc Bias=f=1MHz
15Vdc Bias=f=1MHz
-
-
-
35
pF
20
-
pF
PAGE . 2
STAD-MAY.18.2007
PJSD03TG~PJSD36TG
PJSD24TG
Parameter
Symbol
VRW M
VBR
Conditions
-
Min.
Typical
Max.
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
26.7
-
-
-
-
24
-
IBR=1mA
VR=24V
V
µA
IR
1
Clamping Voltage(8/20 µs)
VC
IPP=4.5A
-
V
-
43
Off State Junction Capacitance
Off State Junction Capacitance
CJ
CJ
0Vdc Bias=f=1MHz
24Vdc Bias=f=1MHz
-
-
pF
-
25
14
-
pF
PJSD36TG
Parameter
Symbol
VRW M
VBR
Conditions
-
Min.
Typical
Max.
Units
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
-
40
-
-
-
-
36
-
IBR=1mA
VR=36V
V
µA
IR
1
Clamping Voltage(8/20 µs)
VC
IPP=3A
-
V
-
52
Off State Junction Capacitance
Off State Junction Capacitance
CJ
CJ
0Vdc Bias=f=1MHz
36Vdc Bias=f=1MHz
-
-
-
p
18
12
-
pF
PJSD03TG
PJ : Panjit
SD : Singal direction
03 : Voltage
TG : Package SOD-723
PAGE . 3
STAD-MAY.18.2007
PJSD03TG~PJSD36TG
100
80
120
Peak Pulssee Power
8/20ms
tf
Peak Value IPP
TEST
WAVEFORM
PARAMETERS
100
m
80
60
40
20
0
60
e-t
m
40
20
0
td=t IPP/2
Average Power
25 50 75 100 125 150
0
0
5
10
15
20
25
30
TL-Lead Temperature-OC
T-Time-ms
FIG. 2-Power Derating Curve
FIG. 1- Pulse Wave Form
10000
1000
320W,8/20ms Waveform
100
10
0.01
1
10
100
1000
10000
td-Pulse Duration-ms
FIG. 3-Peak Pulse Power vs Pulse Time
400
300
200
100
0
0
1
2
3
4
5
6
VR=Reverse Voltage-Volts
FIG. 4-Typical Reverse Voltage vs Capacitance
PAGE . 4
STAD-MAY.18.2007
PJSD03TG~PJSD36TG
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 8K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2007
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-APR.26.2007
PAGE . 5
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