PJSRV05-4_06 [PANJIT]
Low Capacitance TVS and Diode Array; 低电容TVS二极管阵列
| 型号： | PJSRV05-4_06 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | Low Capacitance TVS and Diode Array |
| 文件： | 总4页 (文件大小：595K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LOW CAPACITANCE TVS DIODE ARRAY
The PJSRV05-4 has a low capacitance of 2.1pF and operates with
virtually no insertion loss to 1GHz. This makes the device ideal for
protection of high-speed data lines such as USB2.0, firewire, DVI, and
gigabit Ethernet interfaces.
The low capacitance array configuration allows the user to protect Four
high-speed data or transmission lines. The low inductance construction
minimizes voltageovershoot during high current surges. They may be
used to meet the ESD immunity requirements of IEC61000-4-2, Level 4
SOT-23 6L
(15kV air, 8kVcontact discharge).
SPECIFICATION FEATURES
ϥ IEC61000-4-2 ESD 15kV Air, 8kV Contact compliance
ϥ Low leakage current,maxiimum of 1uA at rated voltage
ϥ Low clamping voltage
ϥ Peak power dissipation of 350W under 8/20us waveform
ϥ Protect four I/O lines.
ϥ Molded JEDEC SOT-23 6L package
ϥ Flammability rating UL94V-0
CONFIGURATION
ϥ Lead Free package 100% tin plating matt finish
APPLICATIONS
ϥ USB 2.0 Power and Data Line Protection
ϥ Video Graphics Cards
ϥ Monitors and Flat Panel Displays
ϥ Digital Vedio Interface (DVI)
ϥ 10/100/1000 Ethernet
ϥ ATM Interfaces
MARKING
Rating
Symbol
PPP
Value
350
Unit
W
Peak Pulse Power (8/20us waveform)
IPPM
VESD
TJ
Peak Pulse Current (8/20us waveform)
ESD Voltage (HBM Contact)
12
A
>8
kV
Operating Temperature Range
Storage Temperature Range
-55~+150
-55~+150
к
к
TSTG
10/30/2006
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ELECTRICAL CHARACTERISTICS (T=25к)
PJSRV05-4
Parameter
Reverse Stand-Off Voltage
Condition
Symbol
VWRM
VBR
Min.
Typ.
1.2
Max.
5
Unit
V
IBR=1mA,
PIN 5 to 2
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20us)
Clamping Voltage (8/20us)
6
V
VR=5V,
PIN 5 to 2
IR
3
uA
V
IPP=1A, Any I/O
pin to Pin 2
VC
12
17
IPP=5A, Any I/O
pin to Pin 2
VC
V
0Vdc, f=1MHZ
between I/O
lines and GND
CJ
CJ
Off State Junction Capacitance
Off State Junction Capacitance
2.1
1
3
pF
pF
0Vdc, f=1MHZ
between I/O
lines
1.5
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TYPICAL CHARACTERISTICS CURVES
Figure 1. Power Derating Curve
Figure 2. 8x20us Pulse Waveform
Figure 3. Junction Capacitance vs Reverse
Voltage
Figure 4. Clamping Voltage vs Peak Pulse
Current (8x20 Waveform)
Figure 5. Non-Repetitive Peak Pulse vs.
Pulse Time
Figure 6. Forward Voltage vs. Forward
Current
10/30/2006
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PACKAGE AND SUGGESTED PAD LAYOUT DIMENSION
10/30/2006
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