SD620CT_04 [PANJIT]
SCHOTTKY BARRIER RECTIFIERS; 肖特基势垒整流器器型号: | SD620CT_04 |
厂家: | PAN JIT INTERNATIONAL INC. |
描述: | SCHOTTKY BARRIER RECTIFIERS |
文件: | 总2页 (文件大小:42K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
SD620CT~SD6100CT
SCHOTTKY BARRIER RECTIFIERS
Unit : inch (mm)
TO-251AB
6.0 Amperes
20 to 100 Volts
CURRENT
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory Flammability Classification 94V-O
• For surface mounted applications
• Low profile package
.264(6.7)
.248(6.3)
.098(2.5)
.082(2.1)
.024(0.6)
.016(0.4)
• Built-in strain relief
.216(5.5)
.200(5.1)
• Low power loss, High efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling, and
polarity protection applications
• High temperature soldering guaranteed:260OC/10 seconds at terminals
• Pb free product are available : 99% Sn above can meet Rohs environment substance
directive request
.071(1.8)
.051(1.3)
.032(0.8)
.012(0.3)
.02(0.5)
.09 .09
MECHANICALDATA
(2.3) (2.3)
Case: D PAK/TO-251AB molded plastic
Terminals: Solder plated, solderable per MIL-STD-202G,Method 208
Polarity: As marking
Weight: 0.015 ounces, 0.4grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA R A M E TE R
S YM B O L S D 620C T S D 630C T S D 640C T S D 650C T S D 660C T S D 680C T S D 6100C T U N ITS
M axim um R ecurrent P eak R everse Voltage
V
V
R R M
20
14
20
30
21
30
40
28
40
50
35
50
6.0
75
60
42
60
80
56
80
100
70
V
V
V
A
A
V
M axim um R M S Voltage
R M S
M axim um D C B locking Voltage
V
D C
100
M axim um A verage Forw ard C urrent .375"(9.5m m )
I
AV
lead length at Tc =75O
C
P eak Forw ard S urge C urrent :8.3m s single half sine-w ave
superim posed on rated load(JE D E C m ethod)
IFS M
M axim um Forw ard Voltage at 3.0A per leg
V
F
0.55
0.70
0.85
M axim um D C R everse C urrent TJ=25O
C
0.2
20
IR
m A
at R ated D C B locking Voltage TJ=100O
C
TypicalTherm alR esistance
R θJC
5
O C / W
O perating Junction Tem perature R ang
S torage Tem perature R ang
T
J
-50 to +125
-50 to +150
O C
T
J
,TS TG
O C
Note: Both Bonding and Chip structure are available.
PAGE . 1
STAD-DEC.16.2004
RATING AND CHARACTERISTIC CURVES
10.0
8.0
6.0
4.0
2.0
90
75
60
45
30
15
0
0
0
50
CASE TEMPERATURE, OC
150
100
1
10
100
NO. OF CYCLE AT 60HZ
Fig.2-MAXIMUMNON-REPETITIVEPEAK
FORWARD SURGECURRENT
Fig.1- FORWARD CURRENT DERATING CURVE
10000
10
T
J
=125O
C
20-40V
50-60V
1000
100
10
TJ C
=75O
80-100V
1.0
TJ C
=25O
1.0
20-40V
50-60V
80-100V
0.1
0.1
0.20
0.40
0.60
0.80
1.00
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FORWARD VOLTAGE, VOLTS
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHRACTERISTIC
Fig.3- TYPICAL REVERSE CHARACTERISTIC
PAGE . 2
STAD-DEC.16.2004
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