VTT1214 [PERKINELMER]
.040 NPN Phototransistors; 0.040 NPN光电晶体管
| 型号： | VTT1214 |
| 厂家： | 
PERKINELMER OPTOELECTRONICS |
| 描述： | .040 NPN Phototransistors |
| 文件： | 总1页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
.040" NPN Phototransistors
VTT1212, 1214
Clear T-1¾ (5 mm) Plastic Package
PACKAGE DIMENSIONS inch (mm)
CASE 26 T-1 ¾ (5 mm)
CHIP TYPE: 40T
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
A medium area high speed NPN silicon phototransistor
possessing excellent sensitivity and good speed mounted
in a lensed, end looking, transparent plastic package.
These devices are spectrally and mechanically matched
to the VTE12xx series of IREDs.
Maximum Temperatures
Storage Temperature:
Operating Temperature:
-40°C to 100°C
-40°C to 100°C
Continuous Power Dissipation:
Derate above 30°C:
50 mW
0.71 mW/°C
Maximum Current:
25 mA
260°C
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages (91-92)
Collector
Breakdown
Emitter
Breakdown
Saturation
Voltage
Light Current
Dark Current
Rise/Fall Time
t /t
Angular
Response
l
l
V
V
V
CE(SAT)
C
CEO
BR(CEO)
BR(ECO)
R F
Part Number
θ
1/2
l = 100 µA
l = 100 µA
H = 0
l = 1.0 mA
H = 400 fc
l = 1.0 mA
C
C
E
C
mA
H = 0
H
H = 0
R = 100 Ω
L
2
fc (mW/cm )
= 5.0 V
(nA)
V
CE
V
CE
Min.
Max.
Volts, Min.
Volts, Min.
Volts, Max.
µsec, Typ.
Typ.
Max. (Volts)
VTT1212
VTT1214
2.0
4.0
—
—
20 (1)
20 (1)
100
100
10
10
30
30
5.0
5.0
0.25
0.25
4.0
6.0
±10°
±10°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
99
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