BF556AT/R [NXP]
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal;
| 型号： | BF556AT/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总13页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF556A; BF556B; BF556C
N-channel silicon junction field-effect transistors
Rev. 03 — 5 August 2004
Product data sheet
1. Product profile
1.1 General description
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
CAUTION
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
■ Low leakage level (typ. 500 fA)
■ High gain
■ Low cut-off voltage.
1.3 Applications
■ Impedance converters in e.g. electret microphones and infrared detectors
■ VHF amplifiers in oscillators and mixers.
1.4 Quick reference data
Table 1:
Symbol
VDS
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
voltage (DC)
-
-
±30
V
VGSoff
IDSS
gate-source cut-off ID = 200 µA;
−0.5
-
−7.5
V
voltage
VDS = 15 V
drain current
VGS = 0 V; VDS = 15 V
BF556A
3
-
-
-
-
7
mA
mA
mA
mW
BF556B
6
13
18
250
BF556C
11
-
Ptot
yfs
total power
dissipation
T
amb ≤ 25 °C
forward transfer
admittance
VGS = 0 V; VDS = 15 V
4.5
-
-
mS
BF556A; BF556B; BF556C
Philips Semiconductors
N-channel silicon junction field-effect transistors
2. Pinning information
Table 2:
Pinning
Pin
1
Description
source (s)
drain (d)
Simplified outline
Symbol
d
s
3
2
g
sym054
3
gate (g)
1
2
SOT23
3. Ordering information
Table 3:
Ordering information
Type number Package
Name
Description
Version
BF556A
BF556B
BF556C
-
plastic surface mounted package; 3 leads
SOT23
4. Marking
Table 4:
Marking
Type number
BF556A
Marking code[1]
24*
25*
26*
BF556B
BF556C
[1] * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
9397 750 13393
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 5 August 2004
2 of 13
BF556A; BF556B; BF556C
Philips Semiconductors
N-channel silicon junction field-effect transistors
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGSO
VGDO
IG
Parameter
Conditions
Min
Max
±30
−30
−30
10
Unit
V
drain-source voltage (DC)
gate-source voltage
gate-drain voltage (DC)
forward gate current (DC)
total power dissipation
storage temperature
junction temperature
-
open drain
-
V
open source
-
V
-
mA
mW
°C
°C
[1]
Ptot
Tamb ≤ 25 °C
-
250
+150
150
Tstg
−65
Tj
-
[1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
mrc166
300
P
tot
(mW)
200
100
0
0
50
100
150
T
(°C)
amb
Fig 1. Power derating curve.
6. Thermal characteristics
Table 6:
Thermal characteristics
Parameter
Symbol
Conditions
Typ
Unit
[1]
Rth(j-a)
thermal resistance from junction
to ambient
500
K/W
[1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
9397 750 13393
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 5 August 2004
3 of 13
BF556A; BF556B; BF556C
Philips Semiconductors
N-channel silicon junction field-effect transistors
7. Static characteristics
Table 7:
Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
−30
−0.5
Typ
Max
-
Unit
V
V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS = 0 V
-
-
VGSoff
IDSS
gate-source cut-off voltage
drain current
ID = 200 µA; VDS = 15 V
VGS = 0 V; VDS = 15 V
BF556A
−7.5
V
3
-
7
mA
mA
mA
pA
BF556B
6
-
13
BF556C
11
-
-
18
IGSS
yfs
gate-source leakage current
forward transfer admittance
VGS = −20 V; VDS = 0 V
VGS = 0 V; VDS = 15 V
VGS = 0 V; VDS = 15 V
−0.5
-
−5000
4.5
-
-
-
mS
µS
yos
common source output
admittance
40
9397 750 13393
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 5 August 2004
4 of 13
BF556A; BF556B; BF556C
Philips Semiconductors
N-channel silicon junction field-effect transistors
8. Dynamic characteristics
Table 8:
Dynamic characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Ciss
Crss
gis
input capacitance
VDS = 15 V; f = 1 MHz
VGS = −10 V
-
-
1.7
3
-
-
pF
pF
VGS = 0 V
reverse transfer capacitance
VDS = 15 V; f = 1 MHz
VGS = −10 V
-
-
0.8
0.9
-
-
pF
pF
VGS = 0 V
common source input
conductance
VDS = 10 V; ID = 1 mA
f = 100 MHz
-
-
15
-
-
µS
µS
f = 450 MHz
300
gfs
common source transfer
conductance
VDS = 10 V; ID = 1 mA
f = 100 MHz
-
-
-
-
-
2
-
-
-
-
-
mS
mS
µS
µS
µS
f = 450 MHz
1.8
−6
−6
−40
grs
common source reverse
conductance
VDS = 10 V; ID = 1 mA
f = 100 MHz
f = 450 MHz
gos
common source output
conductance
VDS = 10 V; ID = 1 mA
f = 100 MHz
-
-
-
30
60
40
-
-
-
µS
f = 450 MHz
µS
Vn
equivalent input noise voltage
VDS = 10 V; ID = 1 mA;
f = 100 Hz
nV/√Hz
mrc154
mrc156
20
10
I
Y
fs
DSS
(mA)
16
(mS)
8
6
4
2
0
12
8
4
0
0
2
4
6
8
0
2
4
6
8
V
(V)
V
(V)
GSoff
GSoff
VDS = 15 V.
VDS = 15 V; ID = 1 µA.
Fig 2. Drain current as a function of gate-source
cut-off voltage; typical values.
Fig 3. Forward transfer admittance as a function of
gate-source cut-off voltage; typical values.
9397 750 13393
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 5 August 2004
5 of 13
BF556A; BF556B; BF556C
Philips Semiconductors
N-channel silicon junction field-effect transistors
mrc153
mrc155
100
300
G
os
(µS)
80
R
DSon
(Ω)
200
100
0
60
40
20
0
0
−2
−4
−6
−8
0
2
4
6
8
V
(V)
V
(V)
GSoff
GSoff
VDS = 15 V.
VDS = 100 mV; VGS = 0 V.
Fig 4. Common-source output conductance as a
function of gate-source cut-off voltage; typical
values.
Fig 5. Drain-source on-state resistance as a function
of gate-source cut-off voltage; typical values.
mrc145
mrc146
5
16
(1)
I
D
I
D
(mA)
(mA)
(1)
(2)
4
3
2
1
0
12
(2)
(3)
(3)
(4)
8
4
0
(5)
(6)
0
4
8
12
16
0
4
8
12
16
V
(V)
V
(V)
DS
DS
BF556A
(1) VGS = 0 V.
BF556B
(1) VGS = 0 V.
(2) VGS = −0.5 V.
(3) VGS = −1.0 V.
(2) VGS = −0.5 V.
(3) VGS = −1.0 V.
(4) VGS = −1.5 V.
(5) VGS = −2.0 V.
(6) VGS = −2.5 V.
Fig 6. Typical output characteristics.
Fig 7. Typical output characteristics.
9397 750 13393
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 5 August 2004
6 of 13
BF556A; BF556B; BF556C
Philips Semiconductors
N-channel silicon junction field-effect transistors
mrc147
mrc148
25
30
I
D
(mA)
20
I
D
(1)
(2)
(mA)
20
15
10
5
(1)
(3)
(4)
10
(2)
(3)
(5)
(6)
0
0
0
4
8
12
16
−6
−4
−2
0
V
(V)
V
(V)
GS
DS
BF556C
VDS = 15 V.
(1) BF556C.
(2) BF556B.
(3) BF556A.
(1) VGS = 0 V.
(2) VGS = −1.0 V.
(3) VGS = −2.0 V.
(4) VGS = −3.0 V.
(5) VGS = −4.0 V.
(6) VGS = −5.0 V.
Fig 8. Typical output characteristics.
Fig 9. Typical input characteristics.
mrc149
mrc151
3
2
10
−10
I
D
I
G
(µA)
(1)
(3)
(2)
2
(pA)
10
(1)
−10
10
1
−1
−1
(2)
(3)
(4)
−1
10
−10
−2
10
10
−3
−2
−10
−8
−6
−4
−2
0
0
4
8
12
16
V
20
(V)
V
(V)
GS
DG
VDS = 15 V.
ID = 10 mA only for BF556B and BF556C.
(1) BF556C.
(2) BF556B.
(3) BF556A.
(1) ID = 10 mA.
(2) ID = 1 mA.
(3) ID = 0.1 mA.
(4) IGSS
.
Fig 10. Drain current as a function of gate-source
voltage; typical values.
Fig 11. Gate current as a function of drain-gate
voltage; typical values.
9397 750 13393
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 5 August 2004
7 of 13
BF556A; BF556B; BF556C
Philips Semiconductors
N-channel silicon junction field-effect transistors
mrc150
mrc134
3
10
1
C
rss
I
GSS
(pF)
0.8
(pA)
2
10
0.6
0.4
0.2
0
10
1
−1
10
−50
0
50
100
150
−10
−8
−6
−4
−2
V
0
T (°C)
j
(V)
GS
VDS = 0 V; VGS = −20 V.
VDS = 15 V.
Fig 12. Gate current as a function of junction
temperature; typical values.
Fig 13. Reverse transfer capacitance; typical values.
mrc140
mrc142
2
3
2
1
0
10
g
, b
is is
C
iss
(mS)
(pF)
10
(1)
(2)
1
−1
10
−2
10
2
3
−10
−8
−6
−4
−2
V
0
10
10
10
(V)
f (MHz)
GS
VDS = 15 V.
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
(1) bis.
(2) gis.
Fig 14. Input capacitance; typical values.
Fig 15. Common-source input admittance; typical
values.
9397 750 13393
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 5 August 2004
8 of 13
BF556A; BF556B; BF556C
Philips Semiconductors
N-channel silicon junction field-effect transistors
mrc141
mrc144
10
−10
b , g
rs rs
(mS)
(1)
g ,−b
(mS)
fs
fs
−1
(1)
(2)
−1
−2
1
−10
−10
−10
(2)
−1
−3
10
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
(1) gfs.
(1) brs.
(2) grs.
(2) −bfs.
Fig 16. Common-source transfer admittance; typical
values.
Fig 17. Common-source reverse admittance; typical
values.
mrc143
mrc278
3
10
10
b , g
os os
V
n
(mS)
(V)
(1)
2
1
10
−1
10
10
(2)
−2
10
1
2
3
2
3
4
5
10
10
10
10
10
10
10
10
f (MHz)
f (Hz)
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
VDS = 10 V; ID = 1 mA.
(1) bos
.
.
(2) gos
Fig 18. Common-source output admittance;typical
values.
Fig 19. Equivalent noise voltage as a function of
frequency.
9397 750 13393
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 5 August 2004
9 of 13
BF556A; BF556B; BF556C
Philips Semiconductors
N-channel silicon junction field-effect transistors
9. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
Fig 20. Package outline.
9397 750 13393
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 5 August 2004
10 of 13
BF556A; BF556B; BF556C
Philips Semiconductors
N-channel silicon junction field-effect transistors
10. Revision history
Table 9:
Revision history
Document ID
Release
date
Data sheet status
Change notice Order number
Supersedes
BF556A_BF556B_BF556C_3 20040805
Product data sheet
-
9397 750 13393 BF556A-B-C_2
Modifications:
• The format of this data sheet has been redesigned to comply with the new
presentation and information standard of Philips Semiconductors
• Table 4: marking code changed.
BF556A-B-C_2
19960729
Product data sheet
-
-
-
9397 750 13393
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 5 August 2004
11 of 13
BF556A; BF556B; BF556C
Philips Semiconductors
N-channel silicon junction field-effect transistors
11. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 13393
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 5 August 2004
12 of 13
BF556A; BF556B; BF556C
Philips Semiconductors
N-channel silicon junction field-effect transistors
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information . . . . . . . . . . . . . . . . . . . . 12
3
4
5
6
7
8
9
10
11
12
13
14
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 5 August 2004
Document order number: 9397 750 13393
Published in The Netherlands
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