BGD902 [NXP]
860 MHz, 18.5 dB gain power doubler amplifier; 860 MHz的18.5 dB增益功率倍增放大器器
| 型号： | BGD902 |
| 厂家： | 
NXP |
| 描述： | 860 MHz, 18.5 dB gain power doubler amplifier |
| 文件： | 总10页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGD902
860 MHz, 18.5 dB gain power doubler amplifier
Rev. 07 — 8 March 2005
Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V.
1.2 Features
■ Excellent linearity
■ Extremely low noise
■ Excellent return loss properties
■ Silicon nitride passivation
■ Rugged construction
■ Gold metallization ensures excellent reliability
1.3 Applications
■ CATV systems operating in the 40 MHz to 900 MHz frequency range.
1.4 Quick reference data
Table 1:
Quick reference data
Symbol Parameter
Conditions
f = 50 MHz
f = 900 MHz
Min
18.2
19
Typ
18.5
19.5
420
Max
18.8
20
Unit
dB
Gp
Itot
power gain
dB
[1]
total current consumption (DC)
405
435
mA
[1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V.
2. Pinning information
Table 2:
Pinning
Pin
1
Description
input
Simplified outline
Symbol
5
2, 3
5
common
+VB
2
8
1
3
5
7
9
1
9
7, 8
9
common
output
2
3
7
8
Side view
msa319
sym095
BGD902
Philips Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
-
Description
Version
BGD902
rectangular single-ended package; aluminium flange; SOT115J
2 vertical mounting holes; 2 × 6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VB
Parameter
Conditions
Min
-
Max
30
Unit
V
supply voltage
Vi
RF input voltage
storage temperature
mounting base temperature
-
70
dBmV
°C
Tstg
−40
−20
+100
+100
Tmb
°C
5. Characteristics
Table 5:
Characteristics
Bandwidth 40 MHz to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
Symbol Parameter
Conditions
Min
18.2
19
Typ
Max
18.8
20
Unit
dB
Gp
power gain
f = 50 MHz
18.5
19.5
0.9
f = 900 MHz
dB
SL
FL
slope cable
equivalent
f = 40 MHz to 900 MHz
0.4
1.4
dB
flatness of
frequency
response
f = 40 MHz to 900 MHz
-
±0.15
±0.3
dB
s11
input return
losses
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 900 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 750 MHz
f = 750 MHz to 900 MHz
21
22
22
19
18
25
25
21
20
19
−45
24
26
28
22
21
32
33
29
25
22
-
-
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
-
-
-
-
s22
output return
losses
-
-
-
-
-
s21
phase response f = 50 MHz
+45
9397 750 14435
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 07 — 8 March 2005
2 of 10
BGD902
Philips Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
Table 5:
Characteristics …continued
Bandwidth 40 MHz to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
Symbol Parameter Conditions
Min
Typ
Max
−67
−68
−62
−58
−62
Unit
dB
dB
dB
dB
dB
CTB
Xmod
CSO
composite triple 49 chs flat; Vo = 47 dBmV; fm = 859.25 MHz
-
-
-
-
-
−68.5
−70
beat
77 chs flat; Vo = 44 dBmV; fm = 547.25 MHz
110 chs flat; Vo = 44 dBmV; fm = 745.25 MHz
129 chs flat; Vo = 44 dBmV; fm = 859.25 MHz
−63.5
−60
[1]
[2]
110 chs; fm = 400 MHz; Vo = 49 dBmV at
550 MHz
−64
129 chs; fm = 650 MHz; Vo = 49.5 dBmV at
860 MHz
-
−58.5
−56.5
dB
cross modulation 49 chs flat; Vo = 47 dBmV; fm = 55.25 MHz
77 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
-
-
-
-
-
−66.5
−69.5
−66
−64
dB
dB
dB
dB
dB
−67
110 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
129 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−63.5
−62
−64.5
−63
[1]
[2]
110 chs; fm = 400 MHz; Vo = 49 dBmV at
550 MHz
−60
129 chs; fm = 860 MHz; Vo = 49.5 dBmV at
860 MHz
-
−61
−58
dB
composite
second order
distortion
49 chs flat; Vo = 47 dBmV; fm = 860.5 MHz
77 chs flat; Vo = 44 dBmV; fm = 548.5 MHz
110 chs flat; Vo = 44 dBmV; fm = 746.5 MHz
129 chs flat; Vo = 44 dBmV; fm = 860.5 MHz
-
-
-
-
-
−65
−72
−65
−61
−67
−62
−67
−60
−58
−63
dB
dB
dB
dB
dB
[1]
[2]
110 chs; fm = 250 MHz; Vo = 49 dBmV at
550 MHz
129 chs; fm = 250 MHz; Vo = 49.5 dBmV at
860 MHz
-
−62
−58
dB
[3]
[4]
[5]
[6]
[7]
[8]
IMD2
Vo
second order
distortion
-
−80
−83
−84
66
−74
dB
-
−77
dB
-
−78
dB
output voltage
IMD = −60 dB
64.5
65.5
67.5
48.5
-
-
-
-
dBmV
dBmV
dBmV
dBmV
67
69
CTB compression = 1 dB; 129 chs flat;
f = 859.25 MHz
49.5
CSO compression = 1 dB; 129 chs flat;
f = 860.5 MHz
50
53
-
dBmV
F
noise figure
f = 50 MHz
f = 550 MHz
f = 750 MHz
f = 900 MHz
-
4.5
5
5
dB
dB
dB
dB
mA
-
5.5
6.5
8
-
5.5
6.5
420
-
[9]
Itot
total current
consumption
(DC)
405
435
[1] Tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz).
[2] Tilt = 12.5 dB (50 MHz to 860 MHz).
9397 750 14435
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 07 — 8 March 2005
3 of 10
BGD902
Philips Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
[3] fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz.
[4] fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz.
[5] fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz.
[6] Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 849.25 MHz.
[7] Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo −6 dB; fr = 749.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 738.25 MHz.
[8] Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB; fr = 549.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 538.25 MHz.
[9] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V.
mda981
mda980
−50
52
−50
52
V
V
CTB
(dB)
o
X
o
mod
(dBmV)
(1)
(dBmV)
(dB)
(2)
(3)
(4)
(2)
(3)
(4)
(1)
−60
48
−60
−70
−80
−90
48
(2)
(3)
(4)
(1)
(1)
−70
−80
−90
44
40
36
44
40
36
0
200
400
600
800
1000
0
200
400
600
800
1000
f (MHz)
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB
(50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset
(50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset
(550 MHz to 750 MHz).
(550 MHz to 750 MHz).
(1) Vo.
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
(4) Typ. −3 σ.
Fig 1. Composite triple beat as a function of
frequency under tilted conditions
Fig 2. Cross modulation as a function of frequency
under tilted conditions
9397 750 14435
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 07 — 8 March 2005
4 of 10
BGD902
Philips Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
mda942
mda982
−50
52
−50
52
V
V
CTB
(dB)
o
CSO
(dB)
o
(1)
(2)
(dBmV)
(1)
(dBmV)
(2)
(1)
−60
−70
−80
−90
48
−60
48
(3)
(4)
(3)
(4)
(2)
(3)
(4)
44
40
36
−70
−80
−90
44
40
36
0
200
400
600
800
1000
0
200
400
600
800
1000
f (MHz)
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB
(50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset
(50 MHz to 860 MHz).
(550 MHz to 750 MHz).
(1) Vo.
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
(4) Typ. −3 σ.
Fig 3. Composite second order distortion as a
function of frequency under tilted conditions
Fig 4. Composite triple beat as a function of
frequency under tilted conditions
9397 750 14435
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 07 — 8 March 2005
5 of 10
BGD902
Philips Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
mda944
mda943
−50
52
−50
52
V
V
CSO
(dB)
X
o
o
mod
(1)
(2)
(1)
(2)
(dBmV)
(dBmV)
(dB)
−60
−70
−80
−90
48
−60
48
(3)
(4)
(3)
(4)
44
40
36
−70
−80
−90
44
40
36
0
200
400
600
800
1000
0
200
400
600
800
1000
f (MHz)
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB
(50 MHz to 860 MHz).
(50 MHz to 860 MHz).
(1) Vo.
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
(4) Typ. −3 σ.
Fig 5. Cross modulation as a function of frequency
under tilted conditions
Fig 6. Composite second order distortion as a
function of frequency under tilted conditions
mda945
mda946
−20
−20
CTB
(dB)
CSO
(dB)
−30
−40
−50
−30
−40
−50
(1)
(1)
(2)
(3)
−60
−60
(2)
(3)
−70
−70
40
45
50
55
40
45
50
55
V
(dBmV)
V
(dBmV)
o
o
ZS = ZL = 75 Ω; VB = 24 V; 129 chs;
fm = 859.25 MHz.
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 860.5 MHz.
(1) Typ. +3 σ.
(1) Typ. +3 σ.
(2) Typ.
(2) Typ.
(3) Typ. −3 σ.
(3) Typ. −3 σ.
Fig 7. Composite triple beat as a function of output
voltage
Fig 8. Composite second order distortion as a
function of output voltage
9397 750 14435
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 07 — 8 March 2005
6 of 10
BGD902
Philips Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
6. Package outline
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A
2
1
2
3
5
7
8
9
A
L
F
S
W
e
b
M
w
x
c
e
1
d
q
y
M
B
2
U
Q
2
B
q
M
B
1
y
M
B
p
U
q
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
d
max.
A
max.
D
max.
E
max.
L
min.
Q
max.
Z
y
2
UNIT
e
e
p
q
W
w
x
b
c
F
q
q
S
U
U
2
1
1
2
1
max.
max.
4.15
3.85
0.51
0.38
44.75 8.2 6-32
44.25 7.8 UNC
mm 20.8 9.1
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
2.4 38.1 25.4 10.2 4.2
0.25 0.7 0.1 3.8
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-02-06
04-02-04
SOT115J
Fig 9. Package outline SOT115J
9397 750 14435
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 07 — 8 March 2005
7 of 10
BGD902
Philips Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
7. Revision history
Table 6:
Revision history
Document ID
BGD902_7
Release date Data sheet status
20050308 Product data sheet
Change notice Doc. number
Supersedes
-
9397 750 14435 BGD902_902MI_6
Modifications:
• The format of this data sheet has been redesigned to comply with the new representation and
information standard of Philips Semiconductors.
• Module BGD902MI withdrawn
BGD902_902MI_6
BGD902_902MI_5
20011102
Product specification
-
-
9397 750 08853 BGD902_902MI_5
19990329
Product specification
9397 750 05481 BGD902_N_3 and
BGD902MI_N_1
BGD902_N_3
BGD902_N_2
BGD902_1
19980709
19980609
19980312
19980831
Preliminary specification -
Preliminary specification -
Preliminary specification -
Preliminary specification -
9397 750 04076 BGD902_N_2
9397 750 03949 BGD902_1
9397 750 03454
-
-
-
BGD902MI_N_1
9397 750 14435
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 07 — 8 March 2005
8 of 10
BGD902
Philips Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
8. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
9. Definitions
10. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
11. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14435
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 07 — 8 March 2005
9 of 10
BGD902
Philips Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
12. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information . . . . . . . . . . . . . . . . . . . . . 9
3
4
5
6
7
8
9
10
11
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 8 March 2005
Document number: 9397 750 14435
Published in The Netherlands
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