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BSS46 [PHILIPS]

Transistor;
BSS46
型号: BSS46
厂家: PHILIPS SEMICONDUCTORS    PHILIPS SEMICONDUCTORS
描述:

Transistor

开关 晶体管
文件: 总5页 (文件大小:137K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

BSS46-10

TRANSISTOR 5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-39, BIP General Purpose Power

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NXP

BSS46LEADFREE

Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN

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CENTRAL

BSS46PBFREE

Small Signal Bipolar Transistor,

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CENTRAL

BSS50

NPN Darlington transistors

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NXP

BSS50A

SILICON PLANAR EPITAXIAL TRANSISTORS

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COMSET

BSS51

NPN Darlington transistors

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NXP

BSS5130A

BSS5130A是采用SOT-23封装的晶体管,适用于低频放大。

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ROHM

BSS5130AHZG

BSS5130AHZG是采用SOT-23封装的晶体管,适用于低频放大。并且是符合AEC-Q101标准的车载用高可靠性产品。

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ROHM

BSS51A

SILICON PLANAR EPITAXIAL TRANSISTORS

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COMSET

BSS52

NPN Darlington transistors

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NXP

BSS52A

SILICON PLANAR EPITAXIAL TRANSISTORS

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COMSET

BSS59

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-18

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ETC

BSS60

Transistor,

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PHILIPS

BSS606N

Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED Lighting, ADAS, body control units, SMPS and motor control.

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INFINEON

BSS606NH6327

Small Signal Field-Effect Transistor, 3.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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INFINEON

BSS606NH6327TR

Small Signal Field-Effect Transistor, 3.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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INFINEON

BSS606NH6327XTSA1

Small Signal Field-Effect Transistor,

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INFINEON

BSS60A

SILICON PLANAR EPITAXIAL TRANSISTORS

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COMSET

BSS61

PNP Darlington transistors

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NXP

BSS612PH6327

Small Signal Field-Effect Transistor

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INFINEON