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BSS50 [NXP]

NPN Darlington transistors; NPN达林顿晶体管

BSS50


型号：	BSS50
厂家：	NXP
描述：	NPN Darlington transistors NPN达林顿晶体管晶体晶体管达林顿晶体管开关
文件：	总8页 (文件大小：54K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

BSS50A

SILICON PLANAR EPITAXIAL TRANSISTORS

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COMSET

BSS51

NPN Darlington transistors

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NXP

BSS5130A

BSS5130A是采用SOT-23封装的晶体管，适用于低频放大。

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ROHM

BSS5130AHZG

BSS5130AHZG是采用SOT-23封装的晶体管，适用于低频放大。并且是符合AEC-Q101标准的车载用高可靠性产品。

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ROHM

BSS51A

SILICON PLANAR EPITAXIAL TRANSISTORS

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COMSET

BSS52

NPN Darlington transistors

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NXP

BSS52A

SILICON PLANAR EPITAXIAL TRANSISTORS

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COMSET

BSS59

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-18

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ETC

BSS60

Transistor,

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PHILIPS

BSS606N

Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED Lighting, ADAS, body control units, SMPS and motor control.

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INFINEON

BSS606NH6327

Small Signal Field-Effect Transistor, 3.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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INFINEON

BSS606NH6327TR

Small Signal Field-Effect Transistor, 3.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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INFINEON

BSS606NH6327XTSA1

Small Signal Field-Effect Transistor,

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INFINEON

BSS60A

SILICON PLANAR EPITAXIAL TRANSISTORS

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COMSET

BSS61

PNP Darlington transistors

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NXP

BSS612PH6327

Small Signal Field-Effect Transistor

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INFINEON

BSS61A

SILICON PLANAR EPITAXIAL TRANSISTORS

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COMSET

BSS62

PNP Darlington transistors

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NXP

BSS62A

SILICON PLANAR EPITAXIAL TRANSISTORS

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COMSET

BSS62T1

MEDIUM POWER PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT

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ETC

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