KMZ51,115 [NXP]
Magnetic Field Sensor, MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, -.25-0.25mT, RECTANGULAR, THROUGH HOLE MOUNT, 3.9 MM WIDTH, PLASTIC, SOT-96-1, SO-8;型号: | KMZ51,115 |
厂家: | NXP |
描述: | Magnetic Field Sensor, MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, -.25-0.25mT, RECTANGULAR, THROUGH HOLE MOUNT, 3.9 MM WIDTH, PLASTIC, SOT-96-1, SO-8 传感器 换能器 |
文件: | 总8页 (文件大小:59K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
M
KMZ51
Magnetic field sensor
Product specification
2000 Jun 13
Supersedes data 1998 Mar 24
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ51
FEATURES
PINNING
PIN
• High sensitivity
SYMBOL
DESCRIPTION
• Integrated compensation coil
• Integrated set/reset coil.
1
2
3
4
5
6
7
8
+Iflip
VCC
flip coil
bridge supply voltage
ground
GND
+Icomp
−Icomp
−VO
APPLICATIONS
compensation coil
compensation coil
bridge output voltage
bridge output voltage
flip coil
• Navigation
• Current and earth magnetic field measurement
• Traffic detection.
+VO
−Iflip
DESCRIPTION
The KMZ51 is an extremely sensitive magnetic field
sensor, employing the magnetoresistive effect of thin-film
permalloy. The sensor contains one magnetoresistive
Wheatstone bridge and integrated compensation and
set/reset coils. The integrated compensation coil allows
magnetic field measurement with current feedback loops
to generate an output that is independent of drift in
sensitivity. The orientation of sensitivity may be set or
changed (flipped) by means of the integrated set/reset coil.
A short current pulse should be applied to the
compensation coil to recover (set) the sensor after
exposure to strong disturbing magnetic fields. A negative
current pulse will reset the sensor to reversed sensitivity.
By use of periodically alternated flipping pulses and a
lock-in amplifier, output is made independent of sensor
and amplifier offset.
8
5
handbook, halfpage
H
ext
pin 1
index
1
4
MGD827
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
VCC
PARAMETER
MIN.
TYP.
MAX.
UNIT
bridge supply voltage
−
5
8
V
S
sensitivity (uncompensated)
12
16
−
mV/V
--------------
kA/m
Voffset
Rbridge
Rcomp
Acomp
offset voltage
−1.5
1
−
−
+1.5
3
mV/V
kΩ
bridge resistance
compensation coil resistance
compensation coil field factor; note 1
100
19
170
22
300
25
Ω
A ⁄ m
------------
mA
2000 Jun 13
2
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ51
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
Rflip
flip coil resistance
1
2
3
Ω
Iflip (min)
tflip (min)
minimum recommended flipping current; note 2
minimum flip pulse duration; note 2
800
1
1000
3
1200
100
mA
µs
Notes
1. The compensation coil generates a field Hcomp = Acomp × Icomp in addition to the external field Hext. Sensor output will
become zero if Hext = −Hcomp
.
2. Average power consumption of the flipping coil, defined by current, pulse duration and pulse repetition rate may not
exceed the specified limit, see Chapter “Limiting values”.
CIRCUIT DIAGRAM
handbook, halfpage
+V
−I
−V
−I
C
O
F
O
6
8
7
5
Z
Z
1
1
1
2
3
4
MGD793
V
+I
GND
+I
CC
F
C
Fig.2 Simplified circuit diagram.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER
VCC
MIN.
MAX.
UNIT
bridge supply voltage
total power dissipation
storage temperature
−
−
9
V
Ptot
130
+150
+125
15
mW
°C
Tstg
−65
−40
−
Tbridge
Icomp
bridge operating temperature
maximum compensation current
maximum flipping current
°C
mA
mA
mW
V
Iflip (max)
Pflip (max)
Visol
−
1500
50
maximum flipping power dissipation
−
voltage between isolated systems:
flip coil and Wheatstone bridge;
compensation coil and Wheatstone bridge;
flip coil and compensation coil
−
60
2000 Jun 13
3
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ51
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
155
K/W
CHARACTERISTICS
amb = 25 °C unless otherwise specified.
T
SYMBOL PARAMETER
VCC bridge supply voltage
CONDITIONS
MIN.
TYP. MAX. UNIT
−
5
−
−
8
V
Hy
Hx
operating range in sensitive direction
−0.2
−0.2
+0.2
+0.2
kA/m
kA/m
operating range perpendicular to
sensitive direction
S
sensitivity
open circuit
12
16
−
mV/V
--------------
kA/m
TCS
temperature coefficient of sensitivity
Ts = −25 to +125 °C
−
−
0.31
−
−
%/K
%/K
TCVO
temperature coefficient of output voltage VCC = 5 V;
−0.4
Tamb = −25 to +125 °C
ICC 3 mA;
−
−0.1
−
%/K
Tamb = −25 to +125 °C
Rbridge
bridge resistance
resistance pins 2 to 3
1
−
3
kΩ
TCRbridge
temperature coefficient of bridge
resistance
Tbridge = −25 to +125 °C
−
0.3
−
%/K
Voffset
offset voltage
−1.5
−3
0
0
+1.5
mV/V
TCVoffset
temperature coefficient of offset voltage Tbridge = −25 to +125 °C
+3
µ V/V
-------------
K
FH
hysteresis of output voltage
−
−
2
%FS
Rcomp
Acomp
resistance of compensation coil
field factor of compensation coil
resistance pins 4 to 5
100
19
170
22
300
25
Ω
A/m
----------
mA
Rflip
resistance of set/reset conductor
resistance pins 1 to 8
1
2
3
Ω
TCRflip
temperature coefficient of resistance of
set/reset coil
Tflip = −25 to +125 °C
−
0.39
−
%/K
Iflip
recommended flipping current for stable
operation
±800
±1000 ±1200 mA
tflip
flip pulse duration
isolating resistance
1
1
3
100
µs
Risol
resistance pins 1 to 2,
1 to 4 and 2 to 4
−
−
mΩ
Visol
f
voltage between isolated systems
operating frequency
voltage pins 1 to 2, 1 to 4
and 2 to 4
−
−
−
50
1
V
0
MHz
2000 Jun 13
4
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ51
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-05-22
99-12-27
SOT96-1
076E03
MS-012
2000 Jun 13
5
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ51
DATA SHEET STATUS
PRODUCT
STATUS
DATA SHEET STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Jun 13
6
Philips Semiconductors
Product specification
Magnetic field sensor
KMZ51
NOTES
2000 Jun 13
7
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69
SCA
© Philips Electronics N.V. 2000
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Printed in The Netherlands
613520/03/pp8
Date of release: 2000 Jun 13
Document order number: 9397 750 07047
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