MRFE6VP5150NR1 [PHILIPS]

WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V;

MRFE6VP5150NR1


型号：	MRFE6VP5150NR1
厂家：	NXP SEMICONDUCTORS
描述：	WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V 局域网放大器光电二极管晶体管
文件：	总25页 (文件大小：1068K)
下载：	下载PDF数据表文档文件

MRFE6VP5300NR1

WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V

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10 PHILIPS

MRFE6VP5600HR6

RF Power Field Effect Transistors

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47 FREESCALE

MRFE6VP5600HR6

RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode

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131 FREESCALE

MRFE6VP5600HR6_11

RF Power Field Effect Transistors

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45 FREESCALE

MRFE6VP5600HSR6

RF Power Field Effect Transistors

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22 FREESCALE

MRFE6VP5600HSR6

RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode

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28 FREESCALE

MRFE6VP61K25GSR5

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

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27 FREESCALE

MRFE6VP61K25HR5

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

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107 FREESCALE

MRFE6VP61K25HR5

Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V

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18 PHILIPS

MRFE6VP61K25HR6

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

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67 FREESCALE

MRFE6VP61K25HR6

RF Power LDMOS Transistors

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47 FREESCALE

MRFE6VP61K25HR6

RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs

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117 FREESCALE

MRFE6VP61K25HR6

Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V

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1 PHILIPS

MRFE6VP61K25HR6_11

RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs

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25 FREESCALE

MRFE6VP61K25HR6_12

RF Power LDMOS Transistors

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34 FREESCALE

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