MRFE6VP61K25HR6 [PHILIPS]

Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V;
MRFE6VP61K25HR6
型号: MRFE6VP61K25HR6
厂家: NXP SEMICONDUCTORS    NXP SEMICONDUCTORS
描述:

Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V

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文件: 总23页 (文件大小:990K)
下载:  下载PDF数据表文档文件

MRFE6VP61K25HR6_11

RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs

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25 FREESCALE

MRFE6VP61K25HR6_12

RF Power LDMOS Transistors

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34 FREESCALE

MRFE6VP61K25HSR5

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

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16 FREESCALE

MRFE6VP61K25HSR6

RF Power LDMOS Transistors

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34 FREESCALE

MRFE6VP61K25HSR6

RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs

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16 FREESCALE

MRFE6VP61K25HSR6

2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-1230S, CASE 375E-04, 4 PIN

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2 PHILIPS

MRFE6VP6300HR3

RF Power Field Effect Transistors

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119 FREESCALE

MRFE6VP6300HR3_11

RF Power Field Effect Transistors

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19 FREESCALE

MRFE6VP6300HSR3

RF Power Field Effect Transistors

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25 FREESCALE

MRFE6VP8600H

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

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138 FREESCALE

MRFE6VP8600HR5

LDMOS Broadband RF Power Transistor, 470-860 MHz, 600 W, 50 V

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3 PHILIPS

MRFE6VP8600HSR5

LDMOS Broadband RF Power Transistor, 470-860 MHz, 600 W, 50 V

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0 PHILIPS

MRFE6VS25N

RF Power LDMOS Transistor

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118 FREESCALE

MRFE6VS25NR1

RF Power LDMOS Transistor

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65 FREESCALE

MRFE8VP8600H

MRFE8VP8600H

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1 PHILIPS