PBSS3540MB,315 [NXP]
PBSS3540MB - 40 V, 0.5 A PNP low VCEsat (BISS) transistor DFN 3-Pin;型号: | PBSS3540MB,315 |
厂家: | NXP |
描述: | PBSS3540MB - 40 V, 0.5 A PNP low VCEsat (BISS) transistor DFN 3-Pin |
文件: | 总12页 (文件大小:450K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PBSS3540MB
SOT883B
40 V, 0.5 A PNP low VCEsat (BISS) transistor
Rev. 1 — 7 March 2012
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small
SOT883B Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS2540MB.
1.2 Features and benefits
Leadless ultra small SMD plastic
High efficiency due to less heat
package
generation
Low package height of 0.37 mm
AEC-Q101 qualified
Low collector-emitter saturation
Reduced Printed-Circuit Board (PCB)
voltage VCEsat
requirements
High collector current capability IC and
ICM
1.3 Applications
DC-to-DC conversion
Supply line switching
Battery charger
LCD backlighting
Driver in low supply voltage
applications (e.g. lamps and LEDs)
1.4 Quick reference data
Table 1.
Symbol
VCEO
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
collector-emitter
voltage
open base
-
-
-40
V
IC
collector current
-
-
-
-
-500
-1
mA
A
ICM
peak collector current single pulse; tp ≤ 1 ms
-
RCEsat
collector-emitter
saturation resistance
IC = -500 mA; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
440
700
mΩ
PBSS3540MB
NXP Semiconductors
40 V, 0.5 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
B
E
C
base
3
1
2
2
emitter
collector
3
3
1
Transparent
top view
2
sym013
SOT883B
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
PBSS3540MB
Leadless ultra small plastic package; 3 solder lands;
body 1.0 x 0.6 x 0.37 mm
SOT883B
4. Marking
Table 4.
Marking codes
Type number
PBSS3540MB
Marking code[1]
0001 0100
[1] For SOT883B binary marking code description see Figure 1.
4.1 Binary marking code description
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig 1. SOT883B binary marking code decription
PBSS3540MB
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 7 March 2012
2 of 12
PBSS3540MB
NXP Semiconductors
40 V, 0.5 A PNP low VCEsat (BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
-40
-40
-6
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
V
open collector
-
V
-
-500
-1
mA
A
ICM
peak collector current
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
IBM
-
-100
250
590
150
150
150
mA
mW
mW
°C
°C
°C
[1][2]
[3][2]
Ptot
-
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
PBSS3540MB
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 7 March 2012
3 of 12
PBSS3540MB
NXP Semiconductors
40 V, 0.5 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
500
212
Unit
K/W
K/W
[1][2]
[3][2]
thermal resistance
from junction to
ambient
in free air
-
-
-
-
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommented soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
006aab603
3
10
duty cycle =
1
Z
th(j-a)
0.75
0.33
(K/W)
0.5
2
10
0.2
0.1
0.05
0.02
10
0.01
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac985
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.2
0.1
0.05
10
0.02
0
0.01
1
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS3540MB
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 7 March 2012
4 of 12
PBSS3540MB
NXP Semiconductors
40 V, 0.5 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Symbol
ICBO
Characteristics
Parameter
Conditions
Min
Typ
Max
-100
-50
Unit
nA
collector-base cut-off
current
VCB = -30 V; IE = 0 A; Tamb = 25 °C
VCB = -30 V; IE = 0 A; Tj = 150 °C
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
µA
IEBO
hFE
emitter-base cut-off
current
-100
nA
DC current gain
VCE = -2 V; IC = -10 mA; Tamb = 25 °C
200
150
-
-
-
-
VCE = -2 V; IC = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = -2 V; IC = -500 mA; pulsed;
40
-
-
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C
-
-
-
-
-50
mV
mV
IC = -100 mA; IB = -5 mA; pulsed;
-130
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -200 mA; IB = -10 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-
-200
-350
700
-1.2
-1.1
-
mV
mV
mΩ
V
IC = -500 mA; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-
RCEsat
VBEsat
VBEon
fT
collector-emitter
saturation resistance
IC = -500 mA; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
440
base-emitter saturation IC = -500 mA; IB = -50 mA; pulsed;
-
-
voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
base-emitter turn-on
voltage
VCE = -2 V; IC = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-
V
transition frequency
VCE = -5 V; IC = -100 mA; f = 100 MHz;
Tamb = 25 °C
100
-
300
-
MHz
pF
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
10
PBSS3540MB
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Product data sheet
Rev. 1 — 7 March 2012
5 of 12
PBSS3540MB
NXP Semiconductors
40 V, 0.5 A PNP low VCEsat (BISS) transistor
mle202
mle203
800
−1200
h
FE
V
BE
(mV)
(1)
600
(1)
(2)
−800
(2)
(3)
400
200
0
−400
(3)
0
−10
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−1
−10
−10
−10
I
(mA)
I
(mA)
C
C
VCE = -2 V
VCE = -2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 4. DC current gain as a function of collector
current; typical values
Fig 5. Base-emitter voltage as a function of collector
current; typical values
mle204
mle205
3
−10
−1200
V
(mV)
V
(mV)
BEsat
CEsat
(1)
−800
(2)
2
−10
(3)
−400
(1)
(3)
(2)
−1
−10
0
−10
−1
2
3
−1
2
3
−1
−10
−10
−10
−1
−10
−10
−10
I
(mA)
I
(mA)
C
C
IC/IB = 20
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 7. Base-emitter saturation voltage as a function of
collector current; typical values
PBSS3540MB
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 7 March 2012
6 of 12
PBSS3540MB
NXP Semiconductors
40 V, 0.5 A PNP low VCEsat (BISS) transistor
006aac993
mle201
3
10
-1.2
-36
R
CEsat
-32
I
(Ω)
C
I
(mA) = -40
B
-28
(A)
2
10
-24
-16
-0.8
-0.4
0
-20
-12
-8
10
-4
(1)
(3)
1
(2)
−1
−10
10
−1
2
3
−1
−10
−10
−10
0
-1
-2
-3
-4
-5
I
(mA)
C
V
(V)
CE
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig 8. Collector current as a function of
collector-emitter voltage; typical values
Fig 9. Collector-emitter equivalent on-resistance as a
function of collector current; typical values
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PBSS3540MB
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 7 March 2012
7 of 12
PBSS3540MB
NXP Semiconductors
40 V, 0.5 A PNP low VCEsat (BISS) transistor
9. Package outline
0.65
0.55
0.40
0.34
0.35
0.20
0.12
0.04 max
1
2
0.30
0.22
1.05
0.95
0.65
0.30
0.22
3
0.55
0.47
Dimensions in mm
11-11-02
Fig 10. Package outline SOT883B
10. Soldering
Footprint information for reflow soldering
SOT883B
1.3
0.7
R0.05 (8x)
0.9
0.6 0.7
0.25
(2x)
0.3
(2x)
0.3
0.4
0.4
(2x)
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
sot883b_fr
Fig 11. Reflow soldering footprint for SOT883B
PBSS3540MB
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 7 March 2012
8 of 12
PBSS3540MB
NXP Semiconductors
40 V, 0.5 A PNP low VCEsat (BISS) transistor
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS3540MB v.1
20120307
Product data sheet
-
-
PBSS3540MB
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 7 March 2012
9 of 12
PBSS3540MB
NXP Semiconductors
40 V, 0.5 A PNP low VCEsat (BISS) transistor
12. Legal information
12.1 Data sheet status
Document status[1] [2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
Right to make changes — NXP Semiconductors reserves the right to make
12.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
PBSS3540MB
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Product data sheet
Rev. 1 — 7 March 2012
10 of 12
PBSS3540MB
NXP Semiconductors
40 V, 0.5 A PNP low VCEsat (BISS) transistor
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published athttp://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
13. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
PBSS3540MB
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 7 March 2012
11 of 12
PBSS3540MB
NXP Semiconductors
40 V, 0.5 A PNP low VCEsat (BISS) transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . .7
Quality information . . . . . . . . . . . . . . . . . . . . . . .7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .9
3
4
5
6
7
8
8.1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11
12.1
12.2
12.3
12.4
13
Contact information. . . . . . . . . . . . . . . . . . . . . .11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 7 March 2012
Document identifier: PBSS3540MB
相关型号:
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