PHX2N60E [PHILIPS]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;


型号：	PHX2N60E
厂家：	PHILIPS SEMICONDUCTORS
描述：	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, 局域网开关脉冲晶体管
文件：	总8页 (文件大小：61K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHX2N60E

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching

V_DSS= 600 V

I_D= 1.3 A

• Stable off-state characteristics

• High thermal cycling performance

• Isolated package

R_DS(ON)≤ 6 Ω

GENERAL DESCRIPTION

PINNING

SOT186A

N-channel, enhancement mode

DESCRIPTION

case

field-effect

power

transistor,

intended for use in off-line switched

mode power supplies, T.V. and

computer monitor power supplies,

d.c.tod.c. converters, motorcontrol

circuits and general purpose

switching applications.

gate

drain

source

case isolated

2 3

The PHX2N60E is supplied in the

SOT186A full pack, isolated

package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DSS

V_DGR

V_GS

I_D

Drain-source voltage

T_j= 25 ˚C to 150˚C

600

± 30

1.3

Drain-gate voltage

T_j= 25 ˚C to 150˚C; R_GS= 20 kΩ

Gate-source voltage

Continuous drain current

T_hs= 25 ˚C; V_GS= 10 V

T_hs= 100 ˚C; V_GS= 10 V

T_hs= 25 ˚C

0.83

7.6

I_DM

P_D

T_j, T_stg

Pulsed drain current

Total dissipation

Operating junction and

storage temperature range

T_hs= 25 ˚C

150

˚C

- 55

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

E_AS

Non-repetitive avalanche

energy

Unclamped inductive load, I_AS= 1.3 A;

t_p= 0.2 ms; T_jprior to avalanche = 25˚C;

102

_DD≤ 50 V; R_GS= 50 Ω; V_GS= 10 V; refer

to fig:17

E_AR

Repetitive avalanche energy¹I_AR= 1.9 A; t_p= 2.5 µs; T_jprior to

avalanche = 25˚C; R_GS= 50 Ω; V_GS= 10 V;

refer to fig:18

Repetitive and non-repetitive

avalanche current

3.7

1.9

I_AS, I_AR

1 pulse width and repetition rate limited by T_jmax.

December 1998

Rev 1.200

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHX2N60E

ISOLATION LIMITING VALUE & CHARACTERISTIC

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_isol

C_isol

R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal

2500

three terminals to external

heatsink

waveform;

R.H. ≤ 65% ; clean and dustfree

Capacitance from T2 to external f = 1 MHz

heatsink

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-hs}

R_{th j-a}

Thermal resistance junction with heatsink compound

K/W

to heatsink

Thermal resistance junction

to ambient

ELECTRICAL CHARACTERISTICS

T_j= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

V_(BR)DSSDrain-source breakdown

CONDITIONS

MIN. TYP. MAX. UNIT

V_GS= 0 V; I_D= 0.25 mA

V_DS= V_GS; I_D= 0.25 mA

600

voltage

∆V_(BR)DSS/ Drain-source breakdown

0.1

%/K

∆T_j

voltage temperature

coefficient

R_DS(ON)

V_GS(TO)

g_fs

Drain-source on resistance

Gate threshold voltage

Forward transconductance

Drain-source leakage current V_DS= 600 V; V_GS= 0 V

V_DS= 480 V; V_GS= 0 V; T_j= 125 ˚C

Gate-source leakage current V_GS= ±30 V; V_DS= 0 V

V_GS= 10 V; I_D= 1 A

V_DS= V_GS; I_D= 0.25 mA

V_DS= 30 V; I_D= 1 A

2.0

0.5

4.6

3.0

1.4

Ω

4.0

I_DSS

100

500

200

µA

I_GSS

Q_g(tot)

Q_gs

Q_gd

Total gate charge

Gate-source charge

Gate-drain (Miller) charge

I_D= 2 A; V_DD= 480 V; V_GS= 10 V

t_d(on)

t_r

t_d(off)

t_f

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

V_DD= 300 V; R_D= 150 Ω;

R_G= 24 Ω

L_d

L_s

Internal drain inductance

Internal source inductance

Measured from drain lead to centre of die

Measured from source lead to source

bond pad

4.5

7.5

C_iss

C_oss

C_rss

Input capacitance

Output capacitance

Feedback capacitance

V_GS= 0 V; V_DS= 25 V; f = 1 MHz

236

December 1998

Rev 1.200

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHX2N60E

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

T_j= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_S

Continuous source current

(body diode)

T_hs= 25˚C

1.9

7.6

1.2

I_SM

V_SD

Pulsed source current (body T_hs= 25˚C

diode)

Diode forward voltage

I_S= 2 A; V_GS= 0 V

t_rr

Q_rr

Reverse recovery time

Reverse recovery charge

I_S= 2 A; V_GS= 0 V; dI/dt = 100 A/µs

360

2.4

µC

Normalised Power Derating

with heatsink compound

PHX1N60A

Drain current, ID (Amps)

PD%

120

110

100

tp =

10 us

RDS(ON) = VDS/ID

100us

1ms

10ms

0.1

0.01

100ms

Ths /

100

120

140

100

1000

Drain-source voltage, VDS (Volts)

Fig.1. Normalised power dissipation.

PD% = 100 P_D/P_{D 25 ˚C}= f(T_hs)

Fig.3. Safe operating area. T_hs= 25 ˚C

I_D& I_DM= f(V_DS); I_DMsingle pulse; parameter t_p

Normalised Current Derating

ID%

ZTHX43

Zth j-hs / (K/W)

120

110

100

1E+01

1E+00

1E-01

1E-02

with heatsink compound

0.5

0.2

0.1

0.05

0.02

D =

Ths /

100

120

140

1E-07

1E-05

1E-03

t / s

1E-01

1E+01

Fig.2. Normalised continuous drain current.

ID% = 100 I_D/I_{D 25 ˚C}= f(T_hs); conditions: V_GS≥ 10 V

Fig.4. Transient thermal impedance.

Z_{th j-hs}= f(t); parameter D = t_p/T

December 1998

Rev 1.200

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHX2N60E

Transconductance, gfs (S)

VDS > ID x RDS(on)max

PHP1N60A

ID, Drain current (Amps)

PHP1N60A

20 V

1.5

Tj = 25 C

10 V

6.5 V

6 V

Tj = 25 C

150 C

5.5 V

0.5

5 V

VGS = 4.5 V

VDS, Drain-Source voltage (Volts)

Drain current, ID (A)

Fig.5. Typical output characteristics.

I_D= f(V_DS); parameter V_GS

Fig.8. Typical transconductance.

g_fs= f(I_D); parameter T_j

Normalised RDS(ON) = f(Tj)

Drain-Source on resistance, RDS(ON) (Ohms)

PHP1N60A

Tj = 25 C

5 V

5.5 V

6 V

6.5 V

10 V

VGS = 20 V

-60 -40 -20

20 40 60 80 100 120 140

Tj /

Drain current, ID (Amps)

Fig.6. Typical on-state resistance.

R_DS(ON)= f(I_D); parameter V_GS

Fig.9. Normalised drain-source on-state resistance.

a = R_DS(ON)/R_{DS(ON)25 ˚C}= f(T_j); I_D= 1 A; V_GS= 10 V

VGS(TO) / V

Drain current, ID (A)

PHP1N60A

max.

VDS > ID x RDS(on)max

typ.

min.

150 C

Tj = 25 C

-60 -40 -20

80 100 120 140

Tj /

Gate-source voltage, VGS (V)

Fig.7. Typical transfer characteristics.

I_D= f(V_GS); parameter T_j

Fig.10. Gate threshold voltage.

V_GS(TO)= f(T_j); conditions: I_D= 0.25 mA; V_DS= V_GS

December 1998

Rev 1.200

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHX2N60E

SUB-THRESHOLD CONDUCTION

ID / A

Switching times, td(on), tr, td(off), tf (ns)

PHP1N60A

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

1000

100

VDD = 300 V

RD = 150 Ohms

Tj = 25 C

2 %

typ

98 %

td(off)

td(on)

100

Gate resistance, RG (Ohms)

VGS / V

Fig.11. Sub-threshold drain current.

I_D= f(V_GS); conditions: T_j= 25 ˚C; V_DS= V_GS

Fig.14. Typical switching times; t_d(on), t_r, t_d(off), t_f= f(R_G)

PHP1N60A

Capacitances, Ciss, Coss, Crss (pF)

1000

100

Normalised Drain-source breakdown voltage

V(BR)DSS @ Tj

1.15

V(BR)DSS @ 25 C

1.1

Ciss

1.05

Coss

Crss

0.95

0.9

0.85

100

1000

-100

-50

100

150

Drain-source voltage, VDS (V)

Tj, Junction temperature (C)

Fig.12. Typical capacitances, C_iss, C_oss, C_rss.

C = f(V_DS); conditions: V_GS= 0 V; f = 1 MHz

Fig.15. Normalised drain-source breakdown voltage;

V_(BR)DSS/V_{(BR)DSS 25 ˚C}= f(T_j)

Gate-Source voltage, VGS (Volts)

ID = 2 A

PHP1N60A

Source-drain diode current, IF(A)

VGS = 0 V

240 V

120 V

VDD = 480 V

150 C

Tj = 25 C

Gate charge, Qg (nC)

0.5

1.5

Source-Drain voltage, VSDS (V)

Fig.13. Typical turn-on gate-charge characteristics.

V_GS= f(Q_G); parameter V_DS

Fig.16. Source-Drain diode characteristic.

I_F= f(V_SDS); parameter T_j

December 1998

Rev 1.200

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHX2N60E

Non-repetitive Avalanche current, IAS (A)

Maximum Repetitive Avalanche Current, IAR (A)

Tj prior to avalanche = 25 C

125 C

VDS

125 C

0.1

0.01

PHP2N60E

1E-03

PHP2N60E

0.1

1E-06

1E-05

1E-04

1E-02

1E-06

1E-05

1E-04

1E-03

1E-02

Avalanche time, tp (s)

Fig.17. Maximum permissible non-repetitive

avalanche current (I_AS) versus avalanche time (t_p);

unclamped inductive load

Fig.18. Maximum permissible repetitive avalanche

current (I_AR) versus avalanche time (t_p)

December 1998

Rev 1.200

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHX2N60E

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

10.3

max

4.6

max

3.2

3.0

2.9 max

2.8

Recesses (2x)

2.5

6.4

0.8 max. depth

15.8

max

seating

plane

15.8

max.

3 max.

not tinned

2.5

13.5

min.

0.4

1.0 (2x)

0.6

2.5

0.9

0.7

2.54

0.5

5.08

1.3

Fig.19. SOT186A; The seating plane is electrically isolated from all terminals.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Refer to mounting instructions for F-pack envelopes.

3. Epoxy meets UL94 V0 at 1/8".

December 1998

Rev 1.200

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHX2N60E

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

December 1998

Rev 1.200

PHX2N60E [PHILIPS]

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