BUL770 [POINN]
NPN SILICON POWER TRANSISTOR; NPN硅功率晶体管
| 型号： | BUL770 |
| 厂家： | 
POWER INNOVATIONS LTD |
| 描述： | NPN SILICON POWER TRANSISTOR |
| 文件： | 总7页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUL770
NPN SILICON POWER TRANSISTOR
Copyright © 1997, Power Innovations Limited, UK
JULY 1991 - REVISED SEPTEMBER 1997
●
Designed Specifically for High Frequency
Electronic Ballasts up to 50 W
TO-220 PACKAGE
(TOP VIEW)
●
●
●
h
7 to 21 at V = 1 V, I = 800 mA
FE CE C
1
2
3
B
C
E
Low Power Losses (On-state and Switching)
Key Parameters Characterised at High
Temperature
●
Tight and Reproducible Parametric
Distributions
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (VBE = 0)
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
VCES
VCBO
VCEO
VEBO
IC
700
V
V
700
400
V
9
V
Continuous collector current
Peak collector current (see Note 1)
Peak collector current (see Note 2)
Continuous base current
2.5
A
ICM
ICM
IB
6
A
8
1.5
A
A
Peak base current (see Note 2)
IBM
2.5
A
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Ptot
Tj
50
W
°C
°C
-65 to +150
-65 to +150
Storage temperature range
Tstg
NOTES: 1. This value applies for tp = 10 ms, duty cycle £ 2%.
2. This value applies for tp = 300 µs, duty cycle £ 2%.
P R O D U C T
I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BUL770
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-emitter
sustaining voltage
Collector-emitter
cut-off current
Emitter cut-off
current
VCEO(sus)
ICES
IC = 100 mA
L = 25 mH
(see Note 3)
TC = 90°C
400
V
VCE = 700 V
VCE = 700 V
VBE = 0
10
µA
mA
V
VBE = 0
200
IEBO
VEB
=
9 V
IC = 0
1
Base-emitter
IB = 160 mA
IB = 160 mA
IB = 160 mA
IB = 160 mA
I
C = 800 mA
IC = 800 mA
C = 800 mA
IC = 800 mA
IC 10 mA
IC = 800 mA
IC 3.2 A
(see Notes 4 and 5)
TC = 90°C
0.83
0.75
0.18
0.22
18.5
14.5
7.5
0.9
VBE(sat)
VCE(sat)
saturation voltage
Collector-emitter
saturation voltage
I
(see Notes 4 and 5)
TC = 90°C
0.25
V
VCE
VCE
VCE
=
=
=
1 V
1 V
5 V
=
10
7
Forward current
transfer ratio
hFE
21
14
=
2
Collector-base forward
bias diode voltage
VFCB
ICB = 60 mA
870
mV
NOTES: 3. Inductive loop switching measurement.
4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.
thermal characteristics
PARAMETER
Junction to free air thermal resistance
Junction to case thermal resistance
MIN
MIN
TYP
MAX
UNIT
RqJA
RqJC
62.5
2.5
°C/W
°C/W
inductive-load switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
TYP
MAX
UNIT
tsv
tfi
Storage time
2.5
150
300
4.3
3
µs
ns
ns
µs
ns
IC = 800 mA
L = 1 mH
IB(on) = 160 mA
IB(off) = 320 mA
V
CC = 40 V
Current fall time
Cross over time
Storage time
190
400
5
VCLAMP = 300 V
txo
tsv
tfi
IC = 800 mA
L = 1 mH
IB(on) = 160 mA
IB(off) = 100 mA
V
CC = 40 V
Current fall time
VCLAMP = 300 V
140
200
resistive-load switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tsv
tfi
Storage time
IC = 800 mA
VCC = 300 V
I
B(on) = 160 mA
2.5
3.4
µs
ns
Current fall time
IB(off) = 160 mA
150
250
P R O D U C T
I N F O R M A T I O N
2
BUL770
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
COLLECTOR CURRENT
L770CHF
L770CVB
30
10
10
TC = 25°C
IB = IC / 5
TC = 25°C
TC = 90°C
1·0
0·1
VCE = 1 V
VCE = 5 V
1·0
0·01
0·01
0·1
1·0
10
0·1
1·0
10
IC - Collector Current - A
IC - Collector Current - A
Figure 1.
Figure 2.
INDUCTIVE SWITCHING TIMES
vs
INDUCTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
CASE TEMPERATURE
L770CI1
L770CI3
10
1·0
10
IB(on) = 160 mA, VCC
= 40 V, L = 1 mH
tsv
txo
tfi
IB(on) = IC / 5
IB(off) = IC / 2.5
VCC = 40 V
VCLAMP = 300 V
IB(off) = 320 mA, VCLAMP = 300 V, IC = 800 mA
L
TC
= 1 mH
= 25°C
1·0
0·1
tsv
tfi
0·01
0·1
0·1
1·0
10
0
20
40
60
80
100
IC - Collector Current - A
TC - Case Temperature - °C
Figure 3.
Figure 4.
P R O D U C T
I N F O R M A T I O N
3
BUL770
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
INDUCTIVE SWITCHING TIMES
vs
INDUCTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
CASE TEMPERATURE
L770CI2
L770CI4
10
1·0
0·1
10
1·0
0·1
IB(on) = 160 mA, VCC
= 40 V, L = 1 mH
tsv
tfi
IB(on) = IC / 5
IB(off) = IC / 8
VCC = 40 V
VCLAMP = 300 V
IB(off) = 100 mA, VCLAMP = 300 V, IC = 800 mA
L
= 1 mH
= 25°C
TC
tsv
tfi
0·1
1·0
10
0
20
40
60
80
100
IC - Collector Current - A
TC - Case Temperature - °C
Figure 5.
Figure 6.
RESISTIVE SWITCHING TIMES
vs
RESISTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
CASE TEMPERATURE
L770CR1
L770CR2
10
1·0
0·1
10
1·0
0·1
IB(on) = 160 mA, VCC = 300 V
IB(off) = 160 mA, IC = 800 mA
IB(on) = IC / 5, VCC = 300 V
IB(off) = IC / 5, TC = 25°C
tsv
tfi
tsv
tfi
0·1
1·0
10
0
20
40
60
80
100
IC - Collector Current - A
TC - Case Temperature - °C
Figure 7.
Figure 8.
P R O D U C T
I N F O R M A T I O N
4
BUL770
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
L770CFB
L770CRB
10
1·0
8
6
4
2
0
IB(on) = IC / 5
VBE(off) = -5 V
TC = 25°C
0·1
TC = 25°C
tp
tp
tp
=
=
=
10 µs
1 ms
10 ms
DC Operation
0·01
1·0
10
100
1000
0
100 200 300 400 500 600 700 800
VCE - Collector-Emitter Voltage - V
VCE - Collector-Emitter Voltage - V
Figure 9.
Figure 10.
P R O D U C T
I N F O R M A T I O N
5
BUL770
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
10,4
10,0
1,32
1,23
3,96
3,71
ø
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
14,1
12,7
1,70
1,07
0,97
0,61
1
2
3
2,74
2,34
0,64
0,41
2,90
2,40
5,28
4,88
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
P R O D U C T
I N F O R M A T I O N
6
BUL770
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
P R O D U C T
I N F O R M A T I O N
7
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