QPA1022TR [QORVO]
8.5 â 11 GHz 4 W GaN Power Amplifier;
| 型号： | QPA1022TR |
| 厂家： | 
Qorvo |
| 描述： | 8.5 â 11 GHz 4 W GaN Power Amplifier 高功率电源 射频 微波 |
| 文件： | 总17页 (文件大小：1085K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPA1022
8.5ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
®
Product Overview
Qorvo’s QPA1022 is a packaged, high performance power
amplifier fabricated on Qorvo’s production 0.15 um GaN on
SiC process (QGaN15). Covering 8.5ꢀ–ꢀ11.0 GHz, the
QPA1022 provides > 4 W of saturated output power and
24.5 dB of large-signal gain while achieving 45% power-
added efficiency.
Packaged in a small 4 x 4 mm plastic overmold QFN, the
QPA1022 is matched to 50Ω with integrated DC blocking
capacitors at RF output and DC grounded input port. It also
has a built-in power detector for system RF power
checking. With a compact dimension, it can support tight
lattice spacing requirements for phased array radar
applications. It is also an ideal component to support test
instrumentation and commercial communication systems.
Functional Block Diagram
Key Features
• Frequency Range: 8.5ꢀ–ꢀ11 GHz
• PSAT (PIN=12 dBm): 36.5 dBm
• PAE (PIN=12 dBm): 45 %
• Power Gain (PIN= 12 dBm): 24.5 dB
• Small Signal Gain: 32 dB
• Bias: VD = 22 V, IDQ = 180 mA
• Package Dimensions: 4 x 4 x 0.85 mm
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Ordering Information
Applications
• Radar
• Electronic Warfare
• Communications
Part No.
QPA1022
Description
QPA1022 Amplifier, Shipping Tray, Qty 50
QPA1022TR
QPA1022 Amplifier, Tape & Reel 7“, Qty 250
QPA1022EVB0 QPA1022 Evaluation Board, Qty 1
Data Sheet Rev B, June 2020
|
Subject to change without notice
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QPA1022
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Absolute Maximum Ratings
Units
Parameter
Valueꢀ/ꢀRange
Drain Voltage (VD)
28
V
Gate Voltage Range (VG)
-5 to 0
600
V
Drain Current (ID)
mA
mA
dBm
°C
Gate Current (IG)
10
Input Power (PIN), 3:1 VSWR, VD=22 V, IDQ=180 mA, 85 °C
Storage Temperature
27
-55 to +150
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may reduce device reliability.
Recommended Operating Conditions
Units
Parameter
Valueꢀ/ꢀRange
Drain Voltage (VD)
22
V
Drain Current (IDQ
)
180
mA
°C
Operating Temperature
− 40 to + 85
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: Temp = 25 °C, VD = 22 V, IDQ = 180 mA. Data de-embedded to the reference planes.
Parameter
Min
Typ
Max
Units
Operational Frequency
8.5
11
GHz
Output Power (Pulse and CW, PIN=12 dBm)
Power Added Efficiency (Pulse and CW, PIN= 12 dBm)
Large Signal Gain (Pulse and CW, PIN=12 dBm)
Small Signal Gain
36.5
45
dBm
%
24.5
32
dB
dB
Input Return Loss
20
dB
Output Return Loss
10
dB
Harmonic Suppression (CW @POUT = 36 dBm, 2f0)
POUT Temp. Coeff. (PIN = 12 dBm)
Small Signal Gain Temp. Coefficient
25
dBc
dB/°C
dB/°C
−0.01
−0.084
Note: For pulse power, Pulse Width = 100 uS, Duty Cycle = 10%
Data Sheet Rev B, June 2020
|
Subject to change without notice
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QPA1022
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Test conditions unless otherwise noted: VD = 22 V, IDQ = 180 mA, Temperature = + 25ꢁ°C
Data Sheet Rev B, June 2020
|
Subject to change without notice
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QPA1022
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Test conditions unless otherwise noted: VD = 22 V, IDQ = 180 mA, Temperature = + 25ꢁ°C
Gain vs Voltage
Gain vs Current
40
38
36
34
32
30
28
26
24
22
20
40
38
36
34
32
30
28
26
24
22
20
18 V
20 V
22 V
90 mA
180 mA
270 mA
7
7
7
8
9
10
11
12
12
12
7
7
7
8
9
10
11
12
12
12
Freq (GHz)
Freq (GHz)
Input Return Loss vs Voltage
Input Return Loss vs Current
0
-5
0
-5
18 V
20 V
22 V
90 mA
180 mA
270 mA
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
8
9
10
11
8
9
10
11
Freq (GHz)
Freq (GHz)
Output Return Loss vs Voltage
Output Return Loss vs Current
0
-5
0
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
18 V
9
20 V
10
22 V
90 mA
9
180 mA
10
270 mA
11
8
11
8
Freq (GHz)
Freq (GHz)
Data Sheet Rev B, June 2020
|
Subject to change without notice
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QPA1022
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀ Large Signal, Pulse
Test conditions unless otherwise noted: VD = 22 V, IDQ = 180 mA, Pin = 12 dBm, Pulse Width = 100 uS, DC = 10%, Temp = + 25ꢁ°C
Power vs Temperature
PAE vs Temperature
40
38
36
34
32
60
55
50
45
40
35
30
- 40 C
+ 25 C
+ 85 C
- 40 C
+ 25 C
+ 85 C
8
9
10
11
12
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Power Detector Voltatge vs Temp
Power Gain vs Temperature
4.0
3.0
2.0
1.0
0.0
27
26
25
24
23
22
21
20
- 40 C
+ 25 C
+ 85 C
- 40 C
+ 25 C
+ 85 C
8
9
10
11
12
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Data Sheet Rev B, June 2020
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Subject to change without notice
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QPA1022
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀ Large Signal, Pulse
Test conditions unless otherwise noted: VD = 22 V, IDQ = 180 mA, Pin = 12 dBm, Pulse Width = 100 uS, DC = 10%, Temp = + 25ꢁ°C
Power vs Voltage
Power vs Current
40
38
36
34
32
40
38
36
34
32
90 mA
180 mA
270 mA
18 V
20 V
22 V
8
8
8
9
10
11
12
12
12
8
8
8
9
10
11
12
12
12
Freq (GHz)
Freq (GHz)
PAE vs Voltage
PAE vs Current
60
55
50
45
40
35
30
60
55
50
45
40
35
30
90 mA
180 mA
270 mA
18 V
20 V
22 V
9
10
11
9
10
Freq (GHz)
11
Freq (GHz)
Power Gain vs Voltage
Power Gain vs Current
27
26
25
24
23
22
21
20
27
26
25
24
23
22
21
20
90 mA
180 mA
270 mA
18 V
20 V
22 V
9
10
11
9
10
Freq (GHz)
11
Freq (GHz)
Data Sheet Rev B, June 2020
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Subject to change without notice
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QPA1022
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀ Large Signal, Pulse
Test conditions unless otherwise noted: VD = 22 V, IDQ = 180 mA, Pulse Width = 100 uS, DC = 10%, Temp = + 25ꢁ°C
Power vs Pin
Pout vs Pin vs Temp
40
38
36
34
32
30
28
26
24
22
20
40
35
30
25
20
15
Freq = 9.5 GHz
- 40 C
+ 25 C
+ 85 C
8.5 GHz
-10 -8 -6 -4 -2 0
9.5 GHz
10.5 GHz
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18
2
4
6
8
10 12 14 16 18
Pin (dBm)
Pin (dBm)
PAE vs Pin vs Temp
PAE vs Pin
50
45
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
Freq = 9.5 GHz
8.5 GHz
-10 -8 -6 -4 -2 0
9.5 GHz
10.5 GHz
- 40 C
2
+ 25 C
+ 85 C
0
0
-10 -8 -6 -4 -2
0
4
6
8
10 12 14 16 18
2
4
6
8
10 12 14 16 18
Pin (dBm)
Pin (dBm)
Power Gain vs Pin vs Temp
Power Gain vs Pin
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
5
Freq = 9.5 GHz
8.5 GHz
-10 -8 -6 -4 -2
9.5 GHz
10.5 GHz
8 10 12 14 16 18
- 40 C
2
+ 25 C
+ 85 C
0
-10 -8 -6 -4 -2
0
4
6
8
10 12 14 16 18
0
2
4
6
Pin (dBm)
Pin (dBm)
Data Sheet Rev B, June 2020
|
Subject to change without notice
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QPA1022
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀ Large Signal, Pulse
Test conditions unless otherwise noted: VD = 22 V, IDQ = 180 mA, Pulse Width = 100 uS, DC = 10%, Temp = + 25ꢁ°C
Ids vs Pin
IG vs Pin
600
500
400
300
200
100
5
4
3
2
1
0
8.5 GHz
9.5 GHz
10.5 GHz
8.5 GHz
9.5 GHz
10.5 GHz
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18
Pin (dBm)
Pin (dBm)
Power Detector Voltatge vs Pout
4.0
3.0
2.0
1.0
0.0
-1.0
8.5 GHz
9.5 GHz
10.5 GHz
24
26
28
30
32
34
36
38
Pout (dBm)
Data Sheet Rev B, June 2020
|
Subject to change without notice
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QPA1022
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀLarge Signal, CW
Test conditions unless otherwise noted: VD = 22 V, IDQ = 180 mA, Pin = 12 dBm, Temperature = + 25ꢁ°C
Power vs Temperature
PAE vs Temperature
40
38
36
34
32
60
55
50
45
40
35
30
- 40 C
+ 25 C
+ 85 C
- 40 C
+ 25 C
+ 85 C
8
9
10
11
12
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Power Detector Voltatge vs Temp
Power Gain vs Temperature
4.0
3.0
2.0
1.0
0.0
27
26
25
24
23
22
21
20
- 40 C
+ 25 C
+ 85 C
- 40 C
+ 25 C
+ 85 C
8
9
10
11
12
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Data Sheet Rev B, June 2020
|
Subject to change without notice
9 of 17
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QPA1022
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀLarge Signal, CW
Test conditions otherwise noted: VD = 22 V, IDQ = 180 mA, Temperature = + 25ꢁ°C
Power vs Pin
PAE vs Pin
40
38
36
34
32
30
28
26
24
22
20
50
45
40
35
30
25
20
15
10
5
8.5 GHz
-10 -8 -6 -4 -2
9.5 GHz
10.5 GHz
8.5 GHz
-10 -8 -6 -4 -2
9.5 GHz
10.5 GHz
0
0
2
4
6
8
10 12 14 16 18
0
2
4
6
8
10 12 14 16 18
Pin (dBm)
Pin (dBm)
Power Detector Voltatge vs Pout
Power Gain vs Pin
40
35
30
25
20
15
10
4.0
3.0
2.0
1.0
0.0
-1.0
8.5 GHz
9.5 GHz
10.5 GHz
8.5 GHz
-10 -8 -6 -4 -2
9.5 GHz
10.5 GHz
0
2
4
6
8
10 12 14 16 18
24
26
28
30
32
34
36
38
Pin (dBm)
Pout (dBm)
Ids vs Pin
IG vs Pin
600
500
400
300
200
100
14
12
10
8
8.5 GHz
9.5 GHz
10.5 GHz
6
4
2
8.5 GHz
-10 -8 -6 -4 -2
9.5 GHz
10.5 GHz
0
0
2
4
6
8
10 12 14 16 18
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18
Pin (dBm)
Pin (dBm)
Data Sheet Rev B, June 2020
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Subject to change without notice
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QPA1022
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Performance Plotsꢀ–ꢀHarmonic Suppressions, CW
Test conditions otherwise noted: VD = 22 V, IDQ = 180 mA, Temperature = + 25ꢁ°C
2nd Harmonic vs. Freq. vs. Temp
2nd Harmonic vs. Pout. vs. Freq
-15
-20
-25
-30
-35
-40
-15
-20
-25
-30
-35
-40
- 40C
+ 25C
+ 85C
Pin = 12 dBm
8.5 GHz
30
9.5 GHz
32
10.5 GHz
34
8
8.5
9
9.5
10
10.5
11
28
36
Freq (GHz)
Output Power (dBm)
3rd Harmonic vs. Freq. vs. Temp
3rd Harmonic vs. Pout. vs. Freq
-25
-30
-35
-40
-45
-25
-30
-35
-40
-45
- 40C
+ 25C
+ 85C
Pin = 12 dBm
8.5 GHz
30
9.5 GHz
32
10.5 GHz
34
8
8.5
9
9.5
10
10.5
11
28
36
Freq (GHz)
Output Power (dBm)
Data Sheet Rev B, June 2020
|
Subject to change without notice
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QPA1022
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Thermal Resistance (θJC) (1)
Channel Temperature, TCH (No RF) (2)
Test Conditions
Value
10.9
Units
ºC/W
ºC
Tbase = 85 ºC, VD = 22 V, IDQ = 180 mA, PDISS = 3.96 W,
CW, No RF (quiescent DC operation)
128.2
Thermal Resistance (θJC) (1)
8.5
ºC/W
ºC
Tbase = 85 ºC, VD = 22 V, IDQ = 180 mA, CW
Freq = 9.5 GHz, ID_Drive = 0.514 A, PIN = 18 dBm, POUT
37.0 dBm, PDISS = 6.4 W
=
Channel Temperature, TCH (Under RF) (2)
139.4
Notes:
1. Thermal resistance is referenced to the back of Cu-Mo carrier plate, assuming carrier thickness 20 mils, eutectic die
attachment, back side of carrier temperature at 85 ºC
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Dissipated Power under RF Drive
Test conditions otherwise noted: VD = 22 V, IDQ = 180 mA, CW, Temperature = +85ꢁ°C
Pdiss vs Pin
10
8.5 GHz
9.5 GHz
10.5 GHz
9
8
7
6
5
4
3
2
1
0
Temperature @ 85C
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18
Pin (dBm)
Data Sheet Rev B, June 2020
|
Subject to change without notice
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QPA1022
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Mechanical Drawing & Pad Description
Dimensions in mm, package is mold encapsulated with NiPdAu plated leads
Part Marking: QPA1022: Part Number, YY = Part Assembly Year, WW = Part Assembly Week, MXXX = Batch ID
Pin Number
Label
N/C
Description
1, 2, 4-12, 14, 15, 18, 20
No internal connection. Recommend to GND at the PCB level
Matched to 50 ohms, DC Grounded
Matched to 50 ohms, DC blocked
Power detection, bias not required
Drain voltage. Bypass network required.
Gate voltage. Bypass network required.
GROUND
3
RF Input
RF Output
VDET
VD
13
16
17
19
VG
21 (slug)
GND
Data Sheet Rev B, June 2020
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Subject to change without notice
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QPA1022
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Applications Information
Bias-Down Procedure
Bias-Up Procedure
1. Set ID limit to 600 mA, IG limit to 10 mA
2. Set VG to −4.0 V
1. Turn off RF signal
2. Reduce VG to −4.0 V. Ensure IDQ ~ 0 mA
4. Set VD to 0 V
3. Set VD +22 V
5. Turn off VD supply
4. Adjust VG more positive until IDQ 180 mA
5. Apply RF signal
6. Turn off VG supply
Data Sheet Rev B, June 2020
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Subject to change without notice
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QPA1022
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Evaluation Board (EVB) Layout Assembly
PCB is made from Rogers 4003C dielectric, 8 mil thickness, 0.5 oz. copper both sides.
Bill of Materials
Reference Des.
Value
Description
Manuf.
Part Number
C1, C2
1000 pF CAP, 1000 pF, 20%, 50 V, 0402
Various
R1, R2
C4
1.8 Ohm RES, 1.8 Ohm, 5%, 1/10 W, 0402
Various
Various
Various
10 uF
CAP, 10 uF, 20%, 50 V, 1206
RES, 0 OHM, JMPR, 0402
R4
0 Ω
J1, J2
2.92 mm CONNECTOR, FEMALE, ENDLAUNCH Southwest Microwave
1092-01A-5
Data Sheet Rev B, June 2020
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QPA1022
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Solderability
1. Compatible with the latest version of J-STD-020, Lead-free solder, 260 °C peak reflow temperature.
Recommended Soldering Temperature Profile
Data Sheet Rev B, June 2020
|
Subject to change without notice
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QPA1022
®
8.5 ꢀ–ꢀ11 GHz 4 W GaN Power Amplifier
Handling Precautions
Parameter
Rating
Standard
Caution!
ESDꢀ–ꢀHuman Body Model (HBM)
1B
C3
ESDAꢁ/ꢁJEDEC JS-001-2012
ESDAꢁ/ꢁJEDEC JS-002-2014
ESDꢀ–ꢀCharged Device Model (CDM)
ESD-Sensitive Device
JEDEC standard IPC/JEDEC
J-STD-020
MSLꢀ–ꢀConvection Reflow 260ꢀ°C
3
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
•
•
•
•
•
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2020 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev B, June 2020
|
Subject to change without notice
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