QPA2609EVB1 [QORVO]
7 â 14 GHz GaAs Low Noise Amplifier;型号: | QPA2609EVB1 |
厂家: | Qorvo |
描述: | 7 â 14 GHz GaAs Low Noise Amplifier |
文件: | 总17页 (文件大小:1234K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
General Description
Qorvo’s QPA2609 is a packaged, high-performance, low
noise amplifier fabricated on Qorvo’s production 90 nm
pHEMT (QPHT09) process. Covering 7 – 14 GHz, the
QPA2609 provides 26 dB small signal gain with a low
noise figure of 1.1dB. The device can deliver 20dBm of
power with P1dB of 18 dBm, while supporting an IM3 level
of −50 dBc (at Pout=0 dBm / tone).
Packaged in a small 4 mm x 4 mm plastic overmold QFN,
the QPA2609 is matched to 50 ohms with integrated DC
blocking caps on both I/O ports for easy handling and
simple system integration.
The QPA2609 high performance and ease of handling
makes it an ideal component for satellite and point to point
communication system applications.
Functional Block Diagram
Product Features
• Frequency Range: 7ꢀ–ꢀ14ꢀGHz
• Noise Figure: 1.1 dB
• Small Signal Gain: 26 dB
• P1dB: 18 dBm
• IM3: −50 dBc (@ Pout=0 dBm/tone)
• Bias: VD = 3.5 V, IDQ = 120 mA, VG = −0.46 V
• Plastic Overmold Package
• Package Dimensions: 4.0 x 4.0 x 0.85 mm
Performance is typical across frequency.
Please reference electrical specification table and data
plots for more details.
Ordering Information
Applications
• Satellite Communications
Part No.
Description
QPA2609S2
QPA2609SR
QPA2609TR7
QPA2609EVB1
QPA2609 Sample Bag, Qty 2
QPA2609 Tape and Reel, Qty 100
QPA2609 Tape and Reel, Qty 750
QPA2609 Evaluation Board
• Point to Point Communications
• Military and Commercial Radar Applications
Data Sheet Rev. D, May 2020 | Subject to change without notice
- 1 of 17 -
www.qorvo.com
QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
Absolute Maximum Ratings
Parameter
Drain Voltage (VD)
Value
4.5
Units
V
Drain Current (ID1/ID2/ID3)
Gate Voltage Range
96/115/192
-1.3 to 0
5.0/5.0/6.6
20
mA
V
Gate Current (IG1/IG2/IG3 at 125 °C)
RF Input Power (50 Ω, 85 °C)
Channel Temperature, TCH
Mounting Temperature (30 seconds)
Storage Temperature
mA
dBm
°C
175
260
°C
−55 to 150
°C
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions may
reduce device reliability.
Recommended Operating Conditions
Parameter
Drain Voltage
Value
3.5
Units
V
Drain Current (quiescent, IDQ
Gate Voltage (typical)
)
120
mA
V
−0.46
−40 to 85ꢀ
Operating Temperature Range
°C
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test Conditions unless otherwise stated: VD = 3.5V, IDQ = 120mA, 25 °C. Data de-embedded to device reference planes
Parameter
Frequency
Min
7
Typical
Max
14
Units
GHz
dB
Small Signal Gain ( 7 to 14 GHz )
Small Signal Gain ( 8 to 12.7 GHz )
Noise Figure ( 7 to 14 GHz )
Noise Figure ( 8 to 12.7 GHz )
1-dB Compression Point
26
26
23.5
dB
1.1
1.1
18
dB
1.4
dB
dBm
dB
Input Return Loss
12
Output Return Loss
16
dB
3RD Order Intermodulation level (Pout=0 dBm/tone)
Output TOI (Pout=0 dBm/tone)
Gain Temperature Coefficient
−50
23
dBc
dBm
dB/°C
−0.013
Data Sheet Rev. D, May 2020 | Subject to change without notice
- 2 of 17 -
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QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Test Conditions unless otherwise stated: VD = 3.5V, IDQ = 120mA, 25 °C. Data de-embedded to device reference planes
Input Return Loss vs Temperature
Gain vs Temperature
0
-5
30
29
28
27
26
25
24
23
22
21
20
-10
-15
-20
-25
-30
- 40 C
9
+ 25 C
+ 85 C
12
- 40 C
9
+ 25 C
+ 85 C
12
7
8
10
11
13
14
7
8
10
11
13
14
Freq (GHz)
Freq (GHz)
Reverse Isolation vs Temperature
Output Return Loss vs Temperature
-50
-55
-60
-65
-70
-75
-80
-85
-90
-95
-100
0
-5
-10
-15
-20
-25
-30
- 40 C
9
+ 25 C
+ 85 C
12
- 40 C
9
+ 25 C
+ 85 C
12
7
8
10
11
13
14
7
8
10
11
13
14
Freq (GHz)
Freq (GHz)
Data Sheet Rev. D, May 2020 | Subject to change without notice
- 3 of 17 -
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QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
Performance Plotsꢀ–ꢀSmall Signal
Test Conditions unless otherwise stated: VD = 3.5V, IDQ = 120mA, 25 °C. Data de-embedded to device reference planes
Gain vs Voltage
Gain vs Current
30
29
28
27
26
25
24
23
22
21
20
30
29
28
27
26
25
24
23
22
21
20
40 mA
60 mA
90 mA
120 mA
150 mA
1.5 V
3.0 V
2.0 V
3.5 V
2.5 V
4.0 V
12
7
7
7
8
8
8
9
10
11
13
14
14
14
7
7
7
8
9
10
11
12
13
14
14
14
Freq (GHz)
Freq (GHz)
Input Return Loss vs Voltage
Input Return Loss vs Current
0
-5
0
-5
1.5 V
3.0 V
2.0 V
3.5 V
2.5 V
4.0 V
40 mA
60 mA
90 mA
120 mA
150 mA
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
9
10
11
12
13
8
9
10
11
12
13
Freq (GHz)
Freq (GHz)
Output Return Loss vs Voltage
Output Return Loss vs Current
0
-5
0
-5
1.5 V
3.0 V
2.0 V
3.5 V
2.5 V
4.0 V
40 mA
60 mA
90 mA
120 mA
150 mA
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
9
10
11
12
13
8
9
10
11
12
13
Freq (GHz)
Freq (GHz)
Data Sheet Rev. D, May 2020 | Subject to change without notice
- 4 of 17 -
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QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
Performance Plotsꢀ–ꢀNoise Figure
Test Conditions unless otherwise stated: VD = 3.5V, IDQ = 120mA, 25 °C. Data de-embedded to device reference planes
NF vs Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
- 40 C
+ 25 C
11
+ 85 C
12
0.0
7
8
9
10
13
14
Freq (GHz)
NF vs Voltage
NF vs Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
40 mA
60 mA
90 mA
12
1.5 V
2.0 V
3.5 V
2.5 V
4.0 V
120 mA
150 mA
3.0 V
7
8
9
10
11
12
13
14
7
8
9
10
11
13
14
Freq (GHz)
Freq (GHz)
Data Sheet Rev. D, May 2020 | Subject to change without notice
- 5 of 17 -
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QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
Performance Plotsꢀ–ꢀPower
Test Conditions unless otherwise stated: VD = 3.5V, IDQ = 120mA, 25 °C. Data de-embedded to device reference planes
P1dB vs Temperature
Psat vs Temperature
24
22
20
18
16
14
12
10
8
24
22
20
18
16
14
12
10
- 40 C
+ 25 C
11
+ 85 C
12
- 40 C
+ 25 C
11
+ 85 C
12
6
7
8
9
10
13
14
7
7
7
8
9
10
13
13
13
14
14
14
Freq (GHz)
Freq (GHz)
Psat vs Voltage
P1dB vs Voltage
24
24
22
20
18
16
14
12
10
8
1.5 V
3.0 V
2.0 V
3.5 V
2.5 V
4.0 V
22
20
18
16
14
12
10
1.5 V
2.0 V
3.5 V
2.5 V
4.0 V
3.0 V
9
6
7
8
9
10
11
12
13
14
8
10
11
12
Freq (GHz)
Freq (GHz)
Psat vs Current
P1dB vs Current
24
22
20
18
16
14
12
10
24
22
20
18
16
14
12
10
8
40 mA
60 mA
90 mA
120 mA
150 mA
40 mA
60 mA
90 mA
12
120 mA
150 mA
6
7
8
9
10
11
13
14
8
9
10
11
12
Freq (GHz)
Freq (GHz)
Data Sheet Rev. D, May 2020 | Subject to change without notice
- 6 of 17 -
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QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
Performance Plotsꢀ–ꢀPower Sweep
Test Conditions unless otherwise stated: VD = 3.5V, IDQ = 120mA, 25 °C. Data de-embedded to device reference planes
Pout vs Pin
Gain vs Pin
24
22
20
18
16
14
12
10
8
30
28
26
24
22
20
18
16
14
12
10
6
4
7 GHz
8 GHz
10.5 GHz
13 GHz
-6
14 GHz
-2
7 GHz
8 GHz
10.5 GHz
13 GHz
-6
14 GHz
-2
2
0
-20 -18 -16 -14 -12 -10
Pin (dBm)
-8
-4
0
-20 -18 -16 -14 -12 -10
Pin (dBm)
-8
-4
0
PAE vs Pin
Ids vs Pin
30
28
26
24
22
20
18
16
14
12
10
8
200
190
180
170
160
150
140
130
120
110
100
7 GHz
7 GHz
8 GHz
8 GHz
10.5 GHz
13 GHz
14 GHz
10.5 GHz
13 GHz
14 GHz
6
4
2
0
-20 -18 -16 -14 -12 -10
Pin (dBm)
-8
-6
-4
-2
0
-20 -18 -16 -14 -12 -10
Pin (dBm)
-8
-6
-4
-2
0
Data Sheet Rev. D, May 2020 | Subject to change without notice
- 7 of 17 -
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QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
Performance Plotsꢀ–ꢀLinearity
Test Conditions unless otherwise stated: VD = 3.5V, IDQ = 120mA, f = 11 MHz, 25 °C. Data de-embedded to device reference planes
TOI vs Temperature
TOI vs Temperature
34
32
30
28
26
24
22
20
18
16
14
34
32
30
28
26
24
22
20
18
16
14
Pout = 10 dBm / tone
Pout = 0 dBm / tone
- 40 C
+ 25 C
+ 85 C
12
- 40 C
+ 25 C
+ 85 C
12
7
8
9
10
11
13
14
7
8
9
10
11
13
14
Freq (GHz)
Freq (GHz)
TOI vs Voltage
TOI vs Current
34
32
30
28
26
24
22
20
18
16
14
36
34
32
30
28
26
24
22
20
18
16
14
40 mA
120 mA
60 mA
150 mA
90 mA
Pout = 0 dBm / tone
1.5 V
3.0 V
2.0 V
3.5 V
2.5 V
4.0 V
Pout = 0 dBm / tone
12 13
7
8
9
10
11
12
13
14
7
8
9
10
11
14
Freq (GHz)
Freq (GHz)
Data Sheet Rev. D, May 2020 | Subject to change without notice
- 8 of 17 -
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QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
Performance Plotsꢀ–ꢀLinearity
Test Conditions unless otherwise stated: VD = 3.5V, IDQ = 120mA, f = 11 MHz, 25 °C. Data de-embedded to device reference planes
IMD3 vs Temperature
0
Pout = 0 dBm / tone
-10
-20
-30
-40
-50
-60
-70
- 40 C
9
+ 25 C
11
+ 85 C
12
-80
7
8
10
13
14
Freq (GHz)
TOI vs Pout
IMD3 vs Pout
40
35
30
25
20
15
10
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
7 GHz
8 GHz
-6 -4
10.5 GHz
13 GHz
14 GHz
10 12
7 GHz
-12 -10 -8
8 GHz
-6 -4
10.5 GHz
13 GHz
14 GHz
8 10 12
-12 -10 -8
-2
0
2
4
6
8
-2
0
2
4
6
Pout (dBm) / tone
Pout (dBm) / tone
IMD3 vs Voltage
IMD3 vs Current
0
-10
-20
-30
-40
-50
-60
-70
-80
0
-10
-20
-30
-40
-50
-60
-70
-80
Pout = 0 dBm / tone
Pout = 0 dBm / tone
1.5 V
3.0 V
2.0 V
3.5 V
2.5 V
4.0 V
40 mA
60 mA
90 mA
120 mA
150 mA
7
8
9
10
11
12
13
14
7
8
9
10
11
12
13
14
Freq (GHz)
Freq (GHz)
Data Sheet Rev. D, May 2020 | Subject to change without notice
- 9 of 17 -
www.qorvo.com
QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
Performance Plotsꢀ–ꢀLinearity
Test Conditions unless otherwise stated: VD = 3.5V, IDQ = 120mA, f = 11 MHz, 25 °C. Data de-embedded to device reference planes
IMD5 vs Voltage
IMD5 vs Pout
-30
-40
-30
-40
Pout = 0 dBm / tone
-50
-50
-60
-60
-70
-70
-80
-80
-90
-90
-100
-110
-120
-100
-110
-120
7 GHz
8 GHz
-6 -4
10.5 GHz
-2
13 GHz
14 GHz
8 10 12
- 40 C
9
+ 25 C
+ 85 C
12
-12 -10 -8
0
2
4
6
7
8
10
11
13
14
Pout (dBm) / tone
Freq (GHz)
IMD5 vs Voltage
IMD5 vs Current
-30
-40
-30
-40
40 mA
60 mA
150 mA
90 mA
1.5 V
3.0 V
2.0 V
3.5 V
2.5 V
4.0 V
120 mA
-50
-50
Pout = 0 dBm / tone
Pout = 0 dBm / tone
-60
-60
-70
-70
-80
-80
-90
-90
-100
-110
-120
-100
-110
-120
7
8
9
10
11
12
13
14
7
8
9
10
11
12
13
14
Freq (GHz)
Freq (GHz)
Data Sheet Rev. D, May 2020 | Subject to change without notice
- 10 of 17 -
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QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
Application Circuit
Bias-up Procedure
1. Set ID limit to 200 mA, IG limit to 10 mA
2. Set VG to −1.3 V
Bias-down Procedure
1. Turn off RF signal
2. Reduce VG to −1.3 V. Ensure IDQ ~ 0 mA
3. Set VD to 0 V
3. Set VD +3.5 V
4. Turn off VD supply
4. Adjust VG more positive until IDQ = 120 mA (VG ~
−0.46 V Typical)
5. Turn off VG supply
5. Apply RF signal
Data Sheet Rev. D, May 2020 | Subject to change without notice
- 11 of 17 -
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QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
Evaluation Board and Assembly
RF Layer is 0.008” thick Rogers Corp. RO4003C (εr = 3.35). Metal layers are 0.5 oz. copper. The microstrip line at the
connector interface is optimized for the Southwest Microwave end launch connector 1092-01A-5.
Bill of Materials
Ref. Des. Component
Value
Manuf.
Various
Various
Part Number
C3, C12
C6, C15
C9, C18
J1, J2
Surface Mount Cap. CAP 0.01UF +/-10% 50V 0402 X7R ROHS
Surface Mount Cap. CAP 1.0UF +/-10% 16V 0603 X7R ROHS
Surface Mount Cap. CAP CER 10UF 10V X7R 10% 0805 TDK ROHS Various
RF Connector 2.92 MM RF CONNECTOR Southwest Microwave 1092-01A-5
Data Sheet Rev. D, May 2020 | Subject to change without notice
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QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
Mechanical Drawing & Pad Description
Dimensions in mm, package is mold encapsulated with NiPdAu plated leads
Part Marking: QPA2609: Part Number, YY = Part Assembly Year, WW = Part Assembly Week, MXXX = Batch ID
Pin Number
1, 3, 9, 11, 17 (slug)
Label
GND
RF Input
VG1
Description
GROUND
2
Matched to 50 ohms, DC blocked
4
Gate Voltage; bias network is required (VG can be tied together at PCB)
Gate Voltage; bias network is required (VG can be tied together at PCB)
Gate Voltage; bias network is required (VG can be tied together at PCB)
Matched to 50 ohms, DC blocked
6
VG2
8
VG3
10
RF Output
VD3
12
Drain Voltage; bias network is required (VD can be tied together at PCB)
Drain Voltage; bias network is required (VD can be tied together at PCB)
Drain Voltage; bias network is required (VD can be tied together at PCB)
No internal connection. Recommend to GND at the PCB level
14
VD2
16
VD1
5, 7, 13, 15
N/C
Data Sheet Rev. D, May 2020 | Subject to change without notice
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QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value Units
Thermal Resistance (θJC) (1)
Channel Temperature (TCH)
Median Lifetime (TM)
47.6
°C/W
Tbase = 85°C, VD = 3.5 V, IDQ = 120 mA
Quiescent / Small Signal operation
PDISS = 0.42 W
105
°C
4.0E07
Hrs
Notes:
1. Thermal resistance is measured to back of the package.
Median Lifetime
Test Conditions: VD = 4 V
Failure Criteria = 10% reduction in ID_MAX
Median Lifetime vs. Channel Temperature
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
FET17
25
50
75
100
125
150
175
200
Channel Temperature, TCH (°C)
Data Sheet Rev. D, May 2020 | Subject to change without notice
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QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
Solderability
1. Compatible with the latest version of J-STD-020, lead-free solder, 260 °C peak reflow temperature.
Recommended Soldering Temperature Profile
Data Sheet Rev. D, May 2020 | Subject to change without notice
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QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
Tape and Reel Information
Standard T/R size = 750 pieces on a 7” reel.
Distance Between
Centerline (mm)
Carrier
Tape (mm)
Cover
Carrier (mm)
Material
Vendor
Cavity (mm)
Length
direction
(P2)
Width
Direction
(F)
Length Width
Depth
(K0)
Pitch
(P1)
Width
(W)
Width
(W)
Vendor P/N
(A0)
(B0)
QFN0400 X
0400D
C-Pack
4.35
4.35
1.1
8.0
2.00
5.50
12.0
9.20
Data Sheet Rev. D, May 2020 | Subject to change without notice
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QPA2609
7 –ꢀ14ꢀGHz GaAs Low Noise Amplifier
Handling Precautions
Parameter
Rating
Standard
ESDꢀ–ꢀHuman Body Model (HBM)
1A
ESDAꢁ/ꢁJEDEC JS-001-2012
ESDAꢁ/ꢁJEDEC JS-002-2014
Caution!
ESD-Sensitive Device
ESDꢀ–ꢀCharged Device Model (CDM) C3
JEDEC standard IPC/JEDEC
J-STD-020
MSLꢀ–ꢀConvection Reflow 260ꢀ°C
3
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Tel: 1-844-890-8163
Web: www.qorvo.com
Email: customer.support@qorvo.com
For technical questions and application information: Email: appsupport@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2020 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. D, May 2020 | Subject to change without notice
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