QPA2735TR7X [QORVO]

13 – 20 GHz GaAs Low Noise Amplifier;
QPA2735TR7X
型号: QPA2735TR7X
厂家: Qorvo    Qorvo
描述:

13 – 20 GHz GaAs Low Noise Amplifier

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QPA2735  
13 –ꢀ20ꢀGHz GaAs Low Noise Amplifier  
General Description  
Qorvo’s QPA2735 is a packaged, high-performance, low  
noise amplifier fabricated on Qorvo’s production 90nm  
pHEMT (QPHT09) process. Covering 13 20 GHz, the  
QPA2735 provides 25.5 dB small signal gain and P1dB of  
18 dBm, while supporting a noise figure of 1.3 dB and IM3  
levels of −60 dBc (at Pout=0 dBm/tone).  
Packaged in a small 4 mm x 4 mm plastic overmold QFN,  
the QPA2735 is matched to 50 ohms with integrated DC  
blocking caps on both I/O ports for easy handling and  
simple system integration.  
The QPA2735 high performance and ease of handling  
makes it ideal for satellite and point to point  
communication systems.  
Functional Block Diagram  
Product Features  
Frequency Range: 13ꢀ –ꢀ20GHz  
Noise Figure: 1.3 dB  
Small Signal Gain: 25.5 dB  
Power at 1 dB Compression: 18 dBm  
Saturation Power: 23 dBm  
IMD3: −60 dBc (@ Pout = 0 dBm/tone)  
Bias: VD = 3.5 V, IDQ = 105 mA, VG = −0.46 V  
Plastic Over-mold Package  
Package Dimensions: 4.0 x 4.0 x 0.85 mm  
Performance is typical across frequency.  
Please reference electrical specification table and data  
plots for more details.  
Ordering Information  
Part No.  
QPA2735TR7X  
Description  
QPA2735 Tape and Reel 7 , Qty 50  
Applications  
Satellite Communications  
Point to Point Communications  
QPA2735TR7  
QPA2735 Tape and Reel 7 , Qty 750  
QPA2735 LNA Evaluation Board, Qty 1  
QPA2735EVB1  
Data Sheet Rev. D, May 2020 | Subject to change without notice  
- 1 of 15 -  
www.qorvo.com  
QPA2735  
13 –ꢀ20ꢀGHz GaAs Low Noise Amplifier  
Absolute Maximum Ratings  
Parameter  
Drain Voltage (VD)  
Value  
4.5  
Units  
V
Drain Current (ID1/ID2/ID3)  
Gate Voltage Range  
96/90/192  
-1.3 to 0  
5.0/5.0/6.6  
20  
mA  
V
Gate Current (IG1/IG2/IG3 at 125 °C)  
RF Input Power (50 Ω, 85 °C)  
Channel Temperature, TCH  
Mounting Temperature (30 seconds)  
Storage Temperature  
mA  
dBm  
°C  
175  
260  
°C  
− 55 to 150  
°C  
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and  
functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions may  
reduce device reliability.  
Recommended Operating Conditions  
Parameter  
Drain Voltage  
Value  
3.5  
Units  
V
Drain Current (quiescent, IDQ)  
Gate Voltage (typical)  
Operating Temperature Range  
105  
-0.46  
mA  
V
−40 to 85  
ꢀ°C  
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating  
conditions.  
Electrical Specifications  
Test conditions, unless otherwise noted: VD = 3.5 V, IDQ = 105 mA, 25 °C. Data de-embedded to device reference planes.  
Parameter  
Frequency  
Min  
13  
Typical  
Max  
20  
Units  
GHz  
dB  
Small Signal Gain  
25.5  
1.3  
Noise Figure  
dB  
Power 1- dB Compression Point  
Input Return Loss  
18  
dBm  
dB  
12  
Output Return Loss  
15  
dB  
3RD Order Intermodulation level (Pout= 0 dBm / tone)  
Output TOI (Pout= 0 dBm / tone)  
Gain Temperature Coefficient  
60  
30  
dBc  
dBm  
dB/°C  
−0.013  
Data Sheet Rev. D, May 2020 | Subject to change without notice  
- 2 of 15 -  
www.qorvo.com  
QPA2735  
13 –ꢀ20ꢀGHz GaAs Low Noise Amplifier  
Performance Plotsꢀ–ꢀSmall Signal  
Test Conditions unless otherwise stated: VD = 3.5 V, IDQ = 105 mA, 25 °C  
Input Return Loss vs Temp  
Gain vs Temp  
0
-5  
30  
28  
26  
24  
22  
20  
18  
-10  
-15  
-20  
-25  
-30  
- 40C  
15  
+ 25C  
+ 85C  
18 19  
- 40C  
15  
+ 25C  
+ 85C  
18 19  
12  
13  
14  
16  
17  
20  
21  
12  
13  
14  
16  
17  
20  
21  
Freq (GHz)  
Freq (GHz)  
Output Return Loss vs Temp  
Reverse Isolation vs Temp  
-40  
-45  
-50  
-55  
-60  
-65  
-70  
-75  
-80  
0
-5  
-10  
-15  
-20  
-25  
-30  
- 40C  
15  
+ 25C  
+ 85C  
18 19  
- 40C  
15  
+ 25C  
+ 85C  
18 19  
12  
13  
14  
16  
17  
20  
21  
12  
13  
14  
16  
17  
20  
21  
Freq (GHz)  
Freq (GHz)  
Data Sheet Rev. D, May 2020 | Subject to change without notice  
- 3 of 15 -  
www.qorvo.com  
QPA2735  
13 –ꢀ20ꢀGHz GaAs Low Noise Amplifier  
Performance Plotsꢀ–ꢀSmall Signal  
Test Conditions unless otherwise stated: VD = 3.5 V, IDQ = 105 mA, 25 °C  
Gain vs Current  
Gain vs Voltage  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
40mA  
105mA  
60mA  
120mA  
80mA  
140mA  
2.0v  
14  
3.0v  
16  
3.5v  
4.0v  
19  
12  
12  
12  
13  
13  
13  
15  
17  
18  
20  
21  
12  
12  
12  
13  
13  
13  
14  
15  
16  
17  
18  
19  
20  
20  
20  
21  
21  
21  
Freq (GHz)  
Freq (GHz)  
Input Return Loss vs Voltage  
Input Return Loss vs Current  
0
-5  
0
-5  
-10  
-15  
-20  
-25  
-30  
-10  
-15  
-20  
-25  
-30  
40mA  
105mA  
60mA  
120mA  
80mA  
140mA  
2.0 V  
14  
3.0 V  
16  
3.5 V  
18  
4.0 V  
19  
15  
17  
20  
21  
14  
15  
16  
17  
18  
19  
Freq (GHz)  
Freq (GHz)  
Output Return Loss vs Voltage  
Output Return Loss vs Current  
0
-5  
0
-5  
-10  
-15  
-20  
-25  
-30  
-10  
-15  
-20  
-25  
-30  
40mA  
60mA  
80mA  
2.0v  
14  
3.0v  
16  
3.5v  
4.0v  
19  
105mA  
120mA  
140mA  
15  
17  
18  
20  
21  
14  
15  
16  
17  
18  
19  
Freq (GHz)  
Freq (GHz)  
Data Sheet Rev. D, May 2020 | Subject to change without notice  
- 4 of 15 -  
www.qorvo.com  
QPA2735  
13 –ꢀ20ꢀGHz GaAs Low Noise Amplifier  
Performance Plotsꢀ–ꢀNose Figure  
Test Conditions unless otherwise stated: VD = 3.5 V, IDQ = 105 mA, 25 °C  
NF vs Temperature  
2.4  
- 40 C  
+ 25 C  
+ 85 C  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
Freq (GHz)  
NF vs Voltage  
NF vs Current  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
40 mA  
60 mA  
80 mA  
2.0 V  
3.0 V  
3.5 V  
4.0 V  
105 mA  
120 mA  
140 mA  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
Freq (GHz)  
Freq (GHz)  
Data Sheet Rev. D, May 2020 | Subject to change without notice  
- 5 of 15 -  
www.qorvo.com  
QPA2735  
13 –ꢀ20ꢀGHz GaAs Low Noise Amplifier  
Performance Plotsꢀ–ꢀPower  
Test Conditions unless otherwise stated: VD = 3.5 V, IDQ = 105 mA, 25 °C  
P1dB vs Temperature  
Psat vs Temperature  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
- 40 C  
15  
+ 25 C  
17  
+ 85 C  
- 40 C  
15  
+ 25 C  
17  
+ 85 C  
18 19  
6
12  
12  
12  
13  
14  
16  
18  
19  
20  
21  
21  
21  
12  
12  
12  
13  
14  
16  
20  
21  
21  
21  
Freq (GHz)  
Freq (GHz)  
P1dB vs Voltage  
Psat vs Voltage  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
2.0 V  
14  
3.0 V  
16  
3.5 V  
18  
4.0 V  
19  
2.0 V  
14  
3.0 V  
16  
3.5 V  
18  
4.0 V  
19  
6
13  
15  
17  
20  
13  
15  
17  
20  
Freq (GHz)  
Freq (GHz)  
P1dB vs Current  
Psat vs Current  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
60 mA  
13  
80mA  
105 mA  
120 mA  
140 mA  
20  
60 mA  
13  
80mA  
15  
105 mA  
120 mA  
18 19  
140 mA  
20  
6
14  
16  
17  
14  
15  
16  
17  
18  
19  
Freq (GHz)  
Freq (GHz)  
Data Sheet Rev. D, May 2020 | Subject to change without notice  
- 6 of 15 -  
www.qorvo.com  
QPA2735  
13 –ꢀ20ꢀGHz GaAs Low Noise Amplifier  
Performance Plotsꢀ–ꢀPower Sweep  
Test Conditions unless otherwise stated: VD = 3.5 V, IDQ = 105 mA, 25 °C  
Pout vs Pin  
Power Gain vs Pin  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
6
4
13 GHz  
15 GHz  
17 GHz  
19 GHz  
13 GHz  
15 GHz  
17 GHz  
19 GHz  
2
0
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2  
Pin (dBm)  
0
2
4
6
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2  
Pin (dBm)  
0
2
4
6
PAE vs Pin  
Drain current vs Pin  
40  
35  
30  
25  
20  
15  
10  
5
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
13 GHz  
15 GHz  
17 GHz  
19 GHz  
13 GHz  
15 GHz  
17 GHz  
19 GHz  
0
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2  
Pin (dBm)  
0
2
4
6
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2  
Pin (dBm)  
0
2
4
6
Data Sheet Rev. D, May 2020 | Subject to change without notice  
- 7 of 15 -  
www.qorvo.com  
QPA2735  
13 –ꢀ20ꢀGHz GaAs Low Noise Amplifier  
Performance Plotsꢀ–ꢀLinearity  
Test Conditions unless otherwise stated: VD = 3.5 V, IDQ = 105 mA, Tone Spacing = 11 MHz, 25 °C.  
Output TOI vs Temp  
34  
33  
32  
31  
30  
29  
28  
27  
Pout = 0 dBm / tone  
26  
25  
- 40 C  
15  
+ 25 C  
+ 85 C  
17 18  
24  
12  
13  
14  
16  
19  
20  
Freq (GHz)  
Output TOI vs Voltage  
Output TOI vs Current  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
Pout = 0 dBm / tone  
Pout = 0 dBm / tone  
60 mA  
13  
80 mA  
14 15  
105 mA  
120 mA  
17 18  
140 mA  
19  
2.0 V  
14  
3.0 V  
3.5 V  
4.0 V  
18  
12  
13  
15  
16  
17  
19  
20  
12  
16  
20  
Freq (GHz)  
Freq (GHz)  
IMD3 vs Pout  
IMD5 vs Pout  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
-100  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
-100  
13 GHz  
15 GHz  
17 GHz  
19 GHz  
13 GHz  
15 GHz  
17 GHz  
19 GHz  
-12 -10 -8  
-6  
-4  
-2  
0
2
4
6
8
10 12  
-12 -10 -8  
-6  
-4  
-2  
0
2
4
6
8
10 12  
Pout (dBm / tone)  
Pout (dBm / tone)  
Data Sheet Rev. D, May 2020 | Subject to change without notice  
- 8 of 15 -  
www.qorvo.com  
QPA2735  
13 –ꢀ20ꢀGHz GaAs Low Noise Amplifier  
Mechanical Drawing & Pad Description  
Dimensions in mm, package is mold encapsulated with NiPdAu plated leads  
Part Marking: QPA2735 = Part Number, YY = Part Assembly Year  
WW = Part Assembly Week, MXXX = Batch ID  
Pin Number  
1, 3, 9, 11, 17 (slug)  
Label  
GND  
Description  
GROUND  
2
RF Input  
VG1  
Matched to 50 ohms, DC blocked  
4
Stage 1 Gate Voltage (All gate control can be tied together at PCB)  
Stage 2 Gate Voltage (All gate control can be tied together at PCB)  
Stage 3 Gate Voltage (All gate control can be tied together at PCB)  
Matched to 50 ohms, DC blocked  
6
VG2  
8
VG3  
10  
RF Output  
VD3  
12  
Stage 3 Drain Voltage  
14  
VD2  
Stage 2 Drain Voltage (VD1 and VD2 can be tied together at PCB)  
Stage 1 Drain Voltage (VD1 and VD2 can be tied together at PCB)  
No internal connection. Recommend to GND at the PCB level  
16  
VD1  
5, 7, 13, 15  
N/C  
Data Sheet Rev. D, May 2020 | Subject to change without notice  
- 9 of 15 -  
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QPA2735  
13 –ꢀ20ꢀGHz GaAs Low Noise Amplifier  
Application Circuit  
Bias-up Procedure  
1. Set ID limit to 220 mA, IG limit to 10 mA  
2. Set VG to −1.3 V  
Bias-down Procedure  
1. Turn off RF signal  
2. Reduce VG to 1.3 V. Ensure IDQ ~ 0mA  
3. Set VD to 0V  
3. Set VD +3.5 V  
4. Turn off VD supply  
4. Adjust VG more positive until IDQ = 105mA (VG ~  
0.46 V Typical)  
5. Turn off VG supply  
5. Apply RF signal  
Data Sheet Rev. D, May 2020 | Subject to change without notice  
- 10 of 15 -  
www.qorvo.com  
QPA2735  
13 –ꢀ20ꢀGHz GaAs Low Noise Amplifier  
Evaluation Board and Assembly  
RF Layer is 0.008” thick Rogers Corp. RO4003C (εr = 3.35). Metal layers are 0.5 oz. copper. The microstrip line at the  
connector interface is optimized for the Southwest Microwave end launch connector 1092-01A-5.  
Bill of Materials  
Ref. Des. Component  
Value  
Manuf. Part Number  
C3, C12  
C6, C15  
C9, C18  
L1  
Surface Mount Cap. CAP 0.01UF +/-10% 50V 0402 X7R ROHS  
Surface Mount Cap. CAP 1.0UF +/-10% 16V 0603 X7R ROHS  
Surface Mount Cap. CAP CER 10UF 10V X7R 10% 0805 TDK ROHS  
Surface Mount Ind. IND 10 nH, 500 mA, 0402, 5.5 GHz, +/- 2%  
Various  
Various  
Various  
Various  
Southwest  
1092-01A-5  
Microwave  
RF IN, RF OUT RF Connectors  
2.92mm END LAUNCH CONNECTOR  
Data Sheet Rev. D, May 2020 | Subject to change without notice  
- 11 of 15 -  
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QPA2735  
13 –ꢀ20ꢀGHz GaAs Low Noise Amplifier  
Thermal and Reliability Information  
Parameter  
Test Conditions  
Value Units  
Thermal Resistance (θJC) (1)  
65.0  
108.9  
6.8E07  
°C/W  
Tbase = 85°C, VD = 3.5 V, IDQ = 105 mA  
Quiescent/Small Signal operation  
PDISS = 0.3675 W  
Channel Temperature (TCH)  
Median Lifetime (TM)  
°C  
Hrs  
Notes:  
1. Thermal resistance is referenced to the back of the package.  
Median Lifetime  
Test Conditions: VD = 4 V  
Failure Criteria = 10% reduction in ID_MAX  
Median Lifetime vs. Channel Temperature  
1E+13  
1E+12  
1E+11  
1E+10  
1E+09  
1E+08  
1E+07  
1E+06  
1E+05  
1E+04  
FET17  
25  
50  
75  
100  
125  
150  
175  
200  
Channel Temperature, TCH (°C)  
Data Sheet Rev. D, May 2020 | Subject to change without notice  
- 12 of 15 -  
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QPA2735  
13 –ꢀ20ꢀGHz GaAs Low Noise Amplifier  
Solderability  
1. Compatible with the latest version of J-STD-020, Lead-free solder, 260 °C peak reflow temperature.  
Recommended Soldering Temperature Profile  
Data Sheet Rev. D, May 2020 | Subject to change without notice  
- 13 of 15 -  
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QPA2735  
13 –ꢀ20ꢀGHz GaAs Low Noise Amplifier  
Tape and Reel Information  
Standard T/R size = 750 pieces on a 7” reel.  
Distance Between  
Centerline (mm)  
Carrier Tape Cover  
(mm)  
Carrier (mm)  
Material  
Vendor  
Cavity (mm)  
Length  
direction  
(P2)  
Width  
Direction  
(F)  
Length Width  
Depth  
(K0)  
Pitch  
(P1)  
Width  
(W)  
Width  
(W)  
Vendor P/N  
(A0)  
(B0)  
QFN0400X0  
400D  
Tek-Pak  
4.35  
4.35  
1.10  
8.00  
2.00  
5.50  
12.00  
9.20  
Data Sheet Rev. D, May 2020 | Subject to change without notice  
- 14 of 15 -  
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QPA2735  
13 –ꢀ20ꢀGHz GaAs Low Noise Amplifier  
Handling Precautions  
Parameter  
Rating  
Standard  
ESDꢀ–ꢀHuman Body Model (HBM)  
1A  
ESDAꢁ/ꢁJEDEC JS-001-2012  
ESDAꢁ/ꢁJEDEC JS-002-2014  
Caution!  
ESD-Sensitive Device  
ESDꢀ–ꢀCharged Device Model (CDM) C3  
JEDEC standard IPC/JEDEC  
J-STD-020  
MSLꢀ–ꢀConvection Reflow 260ꢀ°C  
3
RoHS Compliance  
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances  
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU.  
This product also has the following attributes:  
Lead Free  
Halogen Free (Chlorine, Bromine)  
Antimony Free  
TBBP-A (C15H12Br402) Free  
SVHC Free  
Contact Information  
For the latest specifications, additional product information, worldwide sales and distribution locations:  
Tel: 1-844-890-8163  
Web: www.qorvo.com  
Email: customer.support@qorvo.com  
Important Notice  
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained  
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained  
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for  
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any  
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by  
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED  
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER  
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,  
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.  
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,  
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal  
injury or death.  
Copyright 2020 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.  
Data Sheet Rev. D, May 2020 | Subject to change without notice  
- 15 of 15 -  
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QORVO

QPA3055PS2

100 W S-Band GaN Power Amplifier
QORVO

QPA3069

2.7 – 3.5 GHz 100 W GaN Power Amplifier
QORVO

QPA3069EVB

2.7 – 3.5 GHz 100 W GaN Power Amplifier
QORVO

QPA3069TR7

2.7 – 3.5 GHz 100 W GaN Power Amplifier
QORVO

QPA3333

45-1218 MHz GaAs/GaN Power Doubler Module
QORVO

QPA3333PCBA-410

45-1218 MHz GaAs/GaN Power Doubler Module
QORVO

QPA3333SB

45-1218 MHz GaAs/GaN Power Doubler Module
QORVO