QPA2962TR7 [QORVO]
2 â 20 GHz 10 Watt GaN Amplifier;
| 型号： | QPA2962TR7 |
| 厂家： | 
Qorvo |
| 描述： | 2 â 20 GHz 10 Watt GaN Amplifier |
| 文件： | 总27页 (文件大小：1200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
QPA2962
2ꢀ– 20 GHz 10 Watt GaN Amplifier
®
Product Overview
Qorvo's QPA2962 is a wideband power amplifier fabricated
on Qorvo's QGaN15 GaN on SiC process. The QPA2962
operates from 2 to 20 GHz, providing 10 W of saturated
power with 13 dB large signal gain and 22 % power-added
efficiency at 22 V drain bias. RF ports are matched to 50 Ω,
including integrated DC blocking capacitors and a RF
choke.
Packaged in a 5 x 5 mm air cavity laminate package,
QPA2962 provides designers with a convenient SMT
compatible device that delivers a valuable combination of
wideband power, gain and efficiency while reducing size
Key Features
Frequency Range: 2 ꢀ– ꢀ20 GHz
PSAT (PIN=27 dBm): 40 dBm
and cost.
QPA2962 is ideally suited for wideband
communications systems, electronic warfare, test
instrumentation and radar applications across both military
and commercial markets.
QPA2962 is 100% DC and RF tested on-wafer to ensure
compliance to electrical specifications.
PAE (PIN=27 dBm): 22 %
Power Gain (PIN=27 dBm): 13 dBm
Small Signal Gain: 19 dB
Bias: VD = 22 V, IDQ = 1680 mA
Package Dimensions: 5.0 x 5.0 x 1.455 mm
Lead free and RoHS compliant.
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
Applications
Communication Systems
Electronic Warfare
Radar
VG VD1
VD2
3
5
4
Test Equipment
Ordering Information
Part No.
Description
QPA2962
2 - 20 GHz 10 Watt GaN Amplifier
250 pieces on a 7” reel (standard)
Evaluation Board for QPA2962
RFIN
1
RFOUT
2
QPA2962TR7
QPA2962EVB
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
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Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Min
Typ Max Units
Parameter
Drain Voltage (VD)
Valueꢀ/ꢀRange
29.5 V
Drain Voltage (VD)
Drain Current, Quiescent (IDQ
22
V
)
1680
mA
Gate Voltage Range (VG)
Drain Current (ID)
−4 to 0 V
2848 mA
10 mA
See charts page 6, 7,
10, 13, 16
Drain Current, RF (ID_Drive
Gate Voltage Typ. Range (VG)
Gate Current, RF (IG_Drive
)
mA
Gate Current (IG)
−1.2 to -2.5
V
Power Dissipation (PDISS), TBASE = 85°C
40 W
)
See charts page 6 - 7
mA
°C
Input Power (PIN), 50 Ω, VD = 22 V, IDQ
1680 mA, TBASE = 85°C
Input Power (PIN), 3:1 VSWR, VD = 22 V,
IDQ = 1680 mA, TBASE = 85°C
=
33 dBm
32 dBm
Operating Temp. Range, TBASE −40
+25
+85
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Mounting Temperature (30 seconds max)
Storage Temperature
260 °C
−55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
Electrical Specifications
Parameter
Conditionsꢀ(1) (2)
Min
Typ
Max
Units
Operational Frequency Range
2
20
GHz
PIN = +27 dBm, Frequency = 2 - 18 GHz
PIN = +27 dBm, Frequency = 19 - 20 GHz
PIN = +27 dBm, Frequency = 2 - 18 GHz
PIN = +27 dBm, Frequency = 19 - 20 GHz
40
39
Output Power at Saturation, PSAT
Power Added Efficiency, PAE
dBm
%
22
15
Small Signal Gain, S21
Input Return Loss, IRL
Output Return Loss, ORL
PSAT Temperature Coefficient
S21 Temperature Coefficient
Notes:
19
dB
dB
10
7
dB
TDIFF = −40°C to +85°C; PIN = +27 dBm
TDIFF = −40°C to +85°C
−0.009
−0.04
dBm/°C
dB/°C
1. Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, adjusting VG, TBASEꢁ=ꢁ+25ꢁ°C, Z0ꢁ=ꢁ50ꢁΩ
2. TBASE is back side of package
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Small Signal
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, TBASE = +25ꢁ°C
Gain vs. Freq. vs. Temp.
Gain vs. Frequency vs. VD
30
25
20
15
10
5
30
25
20
15
10
5
12 V
20 V
14 V
22 V
16 V
24 V
18 V
-40 C
8
+25 C
+85 C
0
0
0
2
4
6
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Frequency (GHz)
Frequency (GHz)
Input RL vs. Freq. vs. Temp.
Input RL vs. Frequency vs. VD
0
0
12 V
20 V
14 V
22 V
16 V
24 V
18 V
-40 C
+25 C
+85 C
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
2
4
6
8
10
12
14
16
18
20
22
2
4
6
8
10
12
14
16
18
20
22
Frequency (GHz)
Frequency (GHz)
Output RL vs. Freq. vs. Temp.
Output RL vs. Frequency vs. VD
0
-5
0
-5
12 V
20 V
14 V
22 V
16 V
24 V
18 V
-40 C
+25 C
+85 C
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
3 of 27
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Small Signal
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, TBASE = +25ꢁ°C
Gain vs. Freq. vs. IDQ
Input RL vs. Freq. vs. IDQ
30
25
20
15
10
5
0
-5
840 mA
1260 mA
1680 mA
-10
-15
-20
-25
-30
840 mA
1260 mA
1680 mA
0
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Frequency (GHz)
Frequency (GHz)
Output RL vs. Freq. vs. IDQ
0
-5
840 mA
1260 mA
1680 mA
-10
-15
-20
-25
-30
0
2
4
6
8
10 12 14 16 18 20 22
Frequency (GHz)
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
4 of 27
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, PIN = 27 dBm, TBASE = +25ꢁ°C
PAE vs. Freq. vs. Temp.
Output Power vs. Freq. vs. Temp.
44
42
40
38
36
34
32
45
40
35
30
25
20
15
10
5
-40 C
8
+25 C
+85 C
-40 C
8
+25 C
+85 C
0
0
2
4
6
10 12 14 16 18 20 22
0
2
4
6
10 12 14 16 18 20 22
Frequency (GHz)
Frequency (GHz)
PAE vs. Freq. vs. VD
Output Power vs. Freq. vs. VD
44
45
40
35
30
25
20
15
10
5
42
40
38
36
34
32
12 V
20 V
14 V
22 V
16 V
24 V
18 V
12 V
20 V
14 V
22 V
16 V
24 V
18 V
0
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Frequency (GHz)
Frequency (GHz)
PAE vs. Freq. vs. IDQ
Output Power vs. Freq. vs. IDQ
44
45
40
35
30
25
20
15
10
5
42
40
38
36
34
32
840 mA
6
1260 mA
1680 mA
840 mA
6
1260 mA
1680 mA
0
0
2
4
8
10 12 14 16 18 20 22
0
2
4
8
10 12 14 16 18 20 22
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, PIN = 27 dBm, TBASE = +25ꢁ°C
Drain Current vs. Freq. vs. Temp.
Gate Current vs. Freq. vs. Temp.
3000
2500
2000
1500
1000
500
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
-40 C
+25 C
+85 C
-40 C
8
+25 C
+85 C
0
0
0
0
2
4
6
10 12 14 16 18 20 22
0
0
0
2
2
2
4
6
8
10 12 14 16 18 20 22
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Freq. vs. VD
Gate Current vs. Freq. vs. VD
3000
2500
2000
1500
1000
500
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
12 V
20 V
14 V
22 V
16 V
24 V
18 V
12 V
20 V
14 V
22 V
16 V
24 V
18 V
0
2
4
6
8
10 12 14 16 18 20 22
4
6
8
10 12 14 16 18 20 22
Frequency (GHz)
Frequency (GHz)
Drain Current vs. Freq. vs. IDQ
Gate Current vs. Freq. vs. IDQ
3000
2500
2000
1500
1000
500
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
840 mA
1260 mA
1680 mA
840 mA
6
1260 mA
1680 mA
0
2
4
8
10 12 14 16 18 20 22
4
6
8
10 12 14 16 18 20 22
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, PIN = 27 dBm, TBASE = +25ꢁ°C
Output Power vs. PIN vs. Freq.
PAE vs. PIN vs. Freq.
44
42
40
38
36
34
32
30
28
40
35
30
25
20
15
10
5
2 GHz
6 GHz
10 GHz
30
15 GHz
20 GHz
2 GHz
14 16
6 GHz
18
10 GHz
22
15 GHz
26
20 GHz
30
0
12
20
24
28
32
12
14
16
18
20
22
24
26
28
32
Input Power (dBm)
Input Power (dBm)
Drain Current vs. PIN vs. Freq.
Gate Current vs. PIN vs. Freq.
3000
2500
2000
1500
1000
500
10
8
6
4
2
0
2 GHz
14 16
6 GHz
18
10 GHz
22
15 GHz
26
20 GHz
30
2 GHz
14 16
6 GHz
18
10 GHz
22
15 GHz
26
20 GHz
30 32
0
-2
12
20
24
28
32
12
20
24
28
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, PIN = 27 dBm, TBASE = +25ꢁ°C
Output Power vs. Input Power vs. Temp.
Output Power vs. Input Power vs. Temp.
44
42
40
38
36
34
32
30
28
44
42
40
38
36
34
32
30
28
6 GHz
2 GHz
-40 C
+25 C
26
+85 C
30
-40 C
+25 C
26
+85 C
30
12
14
16
18
20
22
24
28
32
12
14
16
18
20
22
24
28
32
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Temp.
Output Power vs. Input Power vs. Temp.
44
42
40
38
36
34
32
30
28
44
42
40
38
36
34
32
30
28
10 GHz
15 GHz
-40 C
+25 C
26
+85 C
30
-40 C
+25 C
26
+85 C
30
12
14
16
18
20
22
24
28
32
12
14
16
18
20
22
24
28
32
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. Temp.
44
42
40
38
36
34
32
30
28
20 GHz
-40 C
+25 C
26
+85 C
30
12
14
16
18
20
22
24
28
32
Input Power (dBm)
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
8 of 27
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, PIN = 27 dBm, TBASE = +25ꢁ°C
PAE vs. Input Power vs. Temp.
PAE vs. Input Power vs. Temp.
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
2 GHz
6 GHz
-40 C
+25 C
26
+85 C
30
-40 C
+25 C
26
+85 C
30
0
0
12
14
16
18
20
22
24
28
32
12
14
16
18
20
22
24
28
32
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. Temp.
PAE vs. Input Power vs. Temp.
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
15 GHz
10 GHz
-40 C
22 24
+25 C
26
+85 C
30
-40 C
+25 C
26
+85 C
30
0
0
12
14
16
18
20
28
32
12
14
16
18
20
22
24
28
32
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. Temp.
45
20 GHz
40
35
30
25
20
15
10
5
-40 C
+25 C
26
+85 C
30
0
12
14
16
18
20
22
24
28
32
Input Power (dBm)
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
9 of 27
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, PIN = 27 dBm, TBASE = +25ꢁ°C
Drain Current vs. Input Power vs. Temp.
Drain Current vs. Input Power vs. Temp.
3000
2500
2000
1500
1000
500
3000
2500
2000
1500
1000
500
2 GHz
6 GHz
-40 C
22
+25 C
26
+85 C
30
-40 C
22
+25 C
26
+85 C
30
0
0
12
14
16
18
20
24
28
32
12
14
16
18
20
24
28
32
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
Drain Current vs. Input Power vs. Temp.
3000
2500
2000
1500
1000
500
3000
2500
2000
1500
1000
500
15 GHz
10 GHz
-40 C
22
+25 C
26
+85 C
30
-40 C
22
+25 C
26
+85 C
30
0
0
12
14
16
18
20
24
28
32
12
14
16
18
20
24
28
32
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. Temp.
3000
2500
2000
1500
1000
500
20 GHz
-40 C
22
+25 C
26
+85 C
30
0
12
14
16
18
20
24
28
32
Input Power (dBm)
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
10 of 27
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, PIN = 27 dBm, TBASE = +25ꢁ°C
Output Power vs. Input Power vs. VDRAIN
Output Power vs. Input Power vs. VDRAIN
44
42
40
38
36
34
32
30
28
44
42
40
38
36
34
32
30
28
2 GHz
6 GHz
12V
20V
14V
22V
16V
24V
18V
12V
20V
14V
22V
16V
24V
18V
12
14
16
18
20
22
24
26
28
30
32
12
14
16
18
20
22
24
26
28
30
32
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. VDRAIN
Output Power vs. Input Power vs. VDRAIN
44
42
40
38
36
34
32
30
28
44
42
40
38
36
34
32
30
28
10 GHz
15 GHz
12V
20V
14V
22V
16V
24V
18V
12V
20V
14V
22V
16V
24V
18V
12
14
16
18
20
22
24
26
28
30
32
12
14
16
18
20
22
24
26
28
30
32
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. VDRAIN
44
20 GHz
42
40
38
36
34
32
30
28
12V
20V
14V
22V
16V
24V
18V
12
14
16
18
20
22
24
26
28
30
32
Input Power (dBm)
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
11 of 27
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© 2020 Qorvo US, Inc. All rights reserved. Confidential
Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, PIN = 27 dBm, TBASE = +25ꢁ°C
PAE vs. Input Power vs. VDRAIN
PAE vs. Input Power vs. VDRAIN
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
6 GHz
2 GHz
12V
20V
14V
22V
16V
24V
18V
12V
20V
14V
22V
16V
24V
18V
0
0
12
14
16
18
20
22
24
26
28
30
32
12
14
16
18
20
22
24
26
28
30
32
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. VDRAIN
PAE vs. Input Power vs. VDRAIN
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
15 GHz
10 GHz
12V
20V
14V
22V
16V
24V
18V
12V
20V
14V
22V
16V
24V
18V
0
0
12
14
16
18
20
22
24
26
28
30
32
12
14
16
18
20
22
24
26
28
30
32
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. VDRAIN
45
20 GHz
40
35
30
25
20
15
10
5
12V
20V
14V
22V
16V
24V
18V
0
12
14
16
18
20
22
24
26
28
30
32
Input Power (dBm)
Data Sheet Rev. A, Sept. 2020 | Subject to change without notice
12 of 27
www.qorvo.com
© 2020 Qorvo US, Inc. All rights reserved. Confidential
Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, PIN = 27 dBm, TBASE = +25ꢁ°C
Drain Current vs. Input Power vs. VDRAIN
Drain Current vs. Input Power vs. VDRAIN
3000
2500
2000
1500
1000
500
3000
2500
2000
1500
1000
500
2 GHz
6 GHz
12V
20V
14V
22V
16V
24V
18V
12V
20V
14V
22V
16V
24V
18V
0
0
12
14
16
18
20
22
24
26
28
30
32
12
14
16
18
20
22
24
26
28
30
32
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. VDRAIN
Drain Current vs. Input Power vs. VDRAIN
3000
2500
2000
1500
1000
500
3000
2500
2000
1500
1000
500
15 GHz
10 GHz
12V
20V
14V
22V
16V
24V
18V
12V
20V
14V
22V
16V
24V
18V
0
0
12
14
16
18
20
22
24
26
28
30
32
12
14
16
18
20
22
24
26
28
30
32
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. VDRAIN
3000
2500
2000
1500
1000
500
20 GHz
12V
20V
14V
22V
16V
24V
18V
0
12
14
16
18
20
22
24
26
28
30
32
Input Power (dBm)
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Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, PIN = 27 dBm, TBASE = +25ꢁ°C
Output Power vs. Input Power vs. IDQ
Output Power vs. Input Power vs. IDQ
44
42
40
38
36
34
32
30
28
44
42
40
38
36
34
32
30
28
2 GHz
6 GHz
840mA
1260mA
24 26
1680mA
30
840mA
1260mA
1680mA
30 32
12
14
16
18
20
22
28
32
12
14
16
18
20
22
24
26
28
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. IDQ
Output Power vs. Input Power vs. IDQ
44
42
40
38
36
34
32
30
28
44
42
40
38
36
34
32
30
28
10 GHz
15 GHz
840mA
1260mA
1680mA
30 32
840mA
1260mA
1680mA
30
12
14
16
18
20
22
24
26
28
32
12
14
16
18
20
22
24
26
28
Input Power (dBm)
Input Power (dBm)
Output Power vs. Input Power vs. IDQ
44
42
40
38
36
34
32
30
28
20 GHz
840mA
1260mA
1680mA
30 32
12
14
16
18
20
22
24
26
28
Input Power (dBm)
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Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, PIN = 27 dBm, TBASE = +25ꢁ°C
PAE vs. Input Power vs. IDQ
PAE vs. Input Power vs. IDQ
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
2 GHz
6 GHz
840mA
1260mA
24 26
1680mA
30
840mA
1260mA
1680mA
30 32
0
0
12
14
16
18
20
22
28
32
12
14
16
18
20
22
24
26
28
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. IDQ
PAE vs. Input Power vs. IDQ
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
15 GHz
10 GHz
840mA
1260mA
24 26
1680mA
30 32
840mA
20 22
1260mA
24 26
1680mA
30
0
0
12
14
16
18
28
32
12
14
16
18
20
22
28
Input Power (dBm)
Input Power (dBm)
PAE vs. Input Power vs. IDQ
45
20 GHz
40
35
30
25
20
15
10
5
840mA
1260mA
1680mA
30
0
12
14
16
18
20
22
24
26
28
32
Input Power (dBm)
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Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Large Signal
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, PIN = 27 dBm, TBASE = +25ꢁ°C
Drain Current vs. Input Power vs. IDQ
Drain Current vs. Input Power vs. IDQ
3000
2500
2000
1500
1000
500
3000
2500
2000
1500
1000
500
2 GHz
6 GHz
840mA
22
1260mA
26
1680mA
30 32
840mA
1260mA
1680mA
30 32
0
0
12
14
16
18
20
24
28
12
14
16
18
20
22
24
26
28
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. IDQ
Drain Current vs. Input Power vs. IDQ
3000
2500
2000
1500
1000
500
3000
2500
2000
1500
1000
500
15 GHz
10 GHz
840mA
22
1260mA
26
1680mA
30 32
840mA
1260mA
1680mA
30 32
0
0
12
14
16
18
20
24
28
12
14
16
18
20
22
24
26
28
Input Power (dBm)
Input Power (dBm)
Drain Current vs. Input Power vs. IDQ
3000
2500
2000
1500
1000
500
20 GHz
840mA
20
1260mA
24 26
1680mA
28 30 32
0
12
14
16
18
22
Input Power (dBm)
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Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Linearity
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, Tone Spacing = 100 MHz, TBASE = +25ꢁ°C
IMD3, IMD5 vs. POUT/Tone vs. Temp.
IMD3, IMD5 vs. POUT/Tone vs. Temp.
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
6 GHz
2 GHz
IM3 -40 C
IM3 -40 C
IM3 25 C
IM3 85 C
IM5 -40 C
IM5 25 C
IM5 85 C
IM3 25 C
IM3 85 C
IM5 -40 C
IM5 25 C
IM5 85 C
14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power / Tone (dBm)
14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power / Tone (dBm)
IMD3, IMD5 vs. POUT/Tone vs. Temp.
IMD3, IMD5 vs. POUT/Tone vs. Temp.
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
10 GHz
15 GHz
IM3 -40 C
IM3 25 C
IM3 85 C
IM5 -40 C
IM5 25 C
IM5 85 C
IM3 -40 C
IM3 25 C
IM3 85 C
IM5 -40 C
IM5 25 C
IM5 85 C
14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power / Tone (dBm)
14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power / Tone (dBm)
IMD3, IMD5 vs. POUT/Tone vs. Temp.
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
20 GHz
IM3 -40 C
IM3 25 C
IM3 85 C
IM5 -40 C
IM5 25 C
IM5 85 C
14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power / Tone (dBm)
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Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Linearity
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, Tone Spacing = 100 MHz, TBASE = +25ꢁ°C
IMD3, IMD5 vs. POUT/Tone vs. VDRAIN
IMD3, IMD5 vs. POUT/Tone vs. VDRAIN
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
2 GHz
6 GHz
IM3 12 V
IM3 12 V
IM3 18 V
IM3 22 V
IM5 12 V
IM5 18 V
IM5 22 V
IM3 18 V
IM3 22 V
IM5 12 V
IM5 18 V
IM5 22 V
14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power / Tone (dBm)
14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power / Tone (dBm)
IMD3, IMD5 vs. POUT/Tone vs. VDRAIN
IMD3, IMD5 vs. POUT/Tone vs. VDRAIN
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
10 GHz
15 GHz
IM3 12 V
IM3 18 V
IM3 22 V
IM5 12 V
IM5 18 V
IM5 22 V
IM3 12 V
IM3 18 V
IM3 22 V
IM5 12 V
IM5 18 V
IM5 22 V
14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power / Tone (dBm)
14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power / Tone (dBm)
IMD3, IMD5 vs. POUT/Tone vs. Vdrain
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
20 GHz
IM3 12 V
IM3 18 V
IM3 22 V
IM5 12 V
IM5 18 V
IM5 22 V
14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power / Tone (dBm)
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Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Linearity
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, Tone Spacing = 100 MHz, TBASE = +25ꢁ°C
IMD3, IMD5 vs. POUT/Tone vs. IDQ
IMD3, IMD5 vs. POUT/Tone vs. IDQ
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
2 GHz
6 GHz
IM3 840mA
IM3 840mA
IM3 1260mA
IM3 1680mA
IM5 840mA
IM5 1260mA
IM5 1680mA
IM3 1260mA
IM3 1680mA
IM5 840mA
IM5 1260mA
IM5 1680mA
14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power / Tone (dBm)
14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power / Tone (dBm)
IMD3, IMD5 vs. POUT/Tone vs. IDQ
IMD3, IMD5 vs. POUT/Tone vs. IDQ
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
15 GHz
10 GHz
IM3 840mA
IM3 1260mA
IM3 1680mA
IM5 840mA
IM5 1260mA
IM5 1680mA
IM3 840mA
IM3 1260mA
IM3 1680mA
IM5 840mA
IM5 1260mA
IM5 1680mA
14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power / Tone (dBm)
14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power / Tone (dBm)
IMD3, IMD5 vs. POUT/Tone vs. IDQ
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
20 GHz
IM3 840mA
IM3 1260mA
IM3 1680mA
IM5 840mA
IM5 1260mA
IM5 1680mA
14 16 18 20 22 24 26 28 30 32 34 36 38
Output Power / Tone (dBm)
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Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Performance Plots – Harmonics
Test conditions unless otherwise noted: CW, VD = 22 V, IDQ = 1680 mA, PIN = 27 dBm, TBASE = +25ꢁ°C
2nd Harmonic vs. POUT vs. Temp.
3rd Harmonic vs. POUT vs. Temp.
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
-40C
+25C
+85C
-40C
8
+25C
+85C
0
0
0
2
2
2
4
6
10 12 14 16 18 20 22
0
0
0
2
2
2
4
6
8
10 12 14 16 18 20 22
Fundamental Frequency (GHz)
Fundamental Frequency (GHz)
2nd Harmonic vs. POUT vs. VD
3rd Harmonic vs. POUT vs. VD
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
14 V
18 V
22 V
14 V
8
18 V
22 V
4
6
10 12 14 16 18 20 22
4
6
8
10 12 14 16 18 20 22
Fundamental Frequency (GHz)
Fundamental Frequency (GHz)
2nd Harmonic vs. POUT vs. IDQ
3rd Harmonic vs. POUT vs. IDQ
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
840 mA
1260 mA
1680 mA
840 mA
1260 mA
1680 mA
4
6
8
10 12 14 16 18 20 22
4
6
8
10 12 14 16 18 20 22
Fundamental Frequency (GHz)
Fundamental Frequency (GHz)
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Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
Units
Thermal Resistance (θJC) (1)
2.83
ºC/W
TBASE = 85 °C, VD = 22 V, IDQ = 1680 mA,
No RF (quiescent DC operation)
PDISS = 36.96 W
Channel Temperature, TCH (Under RF) (2)
189
2.82
191
°C
ºC/W
°C
Thermal Resistance (θJC) (1)
TBASE = 85 °C, VD = 22 V, IDQ = 1680 mA, Freq = 19 GHz,
ID_Drive = 2 A, PIN = 27 dBm, POUT = 38.4 dBm,
PDISS = 37.6 W
Channel Temperature, TCH (Under RF) (2)
Notes:
1. Thermal resistance determined to the back of package (85 °C)
2. Channel temperature indicated is an IR scan equivalent temperature. Thermal resistance is calculated using this value.
Additional information can be found in the Qorvo Applications Note “GaN Device TCHMAX Theta-JC and Reliability
Estimates”, located here https://www.qorvo.com/products/d/da006480
Dissipated Power
Test conditions, unless otherwise noted:
VD = 22 V, IDQ = 1680 mA, TBASE = 25ꢁ°C, PIN = 27 dBm
Dissipated Power vs. Freq. vs. VD
50
45
40
35
30
25
20
15
10
12V 85C
20V 85C
14V 85C
22V 85C
16V 85C
24V 85C
18V 85C
5
0
0
2
4
6
8
10 12 14 16 18 20 22
Frequency (GHz)
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Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Applications Circuit (Pulse)
VG
VD1
VD2
5
4
3
RFOUT
1
2
RFIN
VD1 and VD2 may be tied together
Bias-Down Procedure
1. Turn off RF signal
Bias-Up Procedure
1. Set ID limit to 2840 mA, IG limit to 10 mA
2. Set VG to −4 V
2. Reduce VG to −4.0 V. Ensure IDQ ~ 0mA
3. Set VD to 0 V
4. Set VD +22 V
5. Adjust VG more positive until IDQ = 1680 mA
6. Apply RF signal
4. Turn off VD supply
5. Turn off VG supply
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Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Application Evaluation Board
See
Note 2
View B
View C and D
Notes:
1. RF PCB is Rogers 6035HTC, 0.010” thick; copper cladding is ½ oz. copper both sides, plated to 1 oz
2. Populated with high density vias; vias are to be non-conductive epoxy filled, over-plated, and planarized
Bill of Materials
Reference Des.
Value
Description
Manuf.
Part Number
C1, C4, C7
10 uF
CAP, 10uF, ±20%, 50V, X5R, 1206
Various
C2, C3, C5, C6,
C8, C9
0.1 uF
CAP, 0.1uF, ±10%, 50V, X7R, 0402
RES, 0 OHM, JMPR, 0402
Various
Various
R2, R3, R6, R7,
R8, R9
0 Ω
R1, R4
R5
10 Ω
RES, 5.1 OHM, 5%, 50V, 0402
RES, 0 OHM, 0.1W, 0603
Various
Various
0 Ω
H1
-
-
Header, connector, 2x6, 0.100”, SMD
Connector, Female, End Launch, 2.9mm
Screw, cap, socket head, 2-56x1/8”
J1, J2
S1 – S4
Southwest Microwave 1092-01A-5
Rogers 4003C, 8 mil dielectric, 1 oz. copper
(gold plated), 2 layers
PCB
-
Rogers Corp.
Custom
Custom
Carrier
Solder
-
-
T-Carrier, Copper C110, 0.990 x 2.000 x 0.275”
Paste, solder, syntech, Sn62/Pb36/Ag2
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Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Mechanical Information
3
4
5
6
2
1
Notes: unless otherwise specified;
1. Dimensions: millimeters (mm)
2. Package is air cavity, leads are gold (Au) plated, base is laminate; Part is epoxy sealed
3. Marking: YY is calendar year; WW is assembly week; MXXX is batch ID
Pin Description
Pin Number
1
Symbol
RFIN
Description
RF input. 50 Ohms. DC blocked.
2
RFOUT
VD2
RF output. 50 Ohms. DC blocked.
3
Drain voltage, stage 2. Bypass network required; refer to page 22.
Drain voltage, stage 1. Bypass network required; refer to page 22.
Gate voltage, stage 1 and 2. Bypass network required; refer to page 22.
Ground connection
4
VD1
5
VG
6
Center Pad
Non-assigned pins
Ground. Connect to PCB ground
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Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Tape and reel Information
Standard T/R size = 250 pieces on a 7” reel
Dimensions: millimeters (mm)
Tolerances unless otherwise noted: .X = ± .2; .XX = ± .10
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Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Solderability
Compatible with lead-free soldering processes with 260°C peak reflow temperature.
This package is air-cavity and non-hermetic, and therefore cannot be subjected to aqueous washing. The use of no-clean
solder to avoid washing after soldering is highly recommended.
Contact plating: Ni-Au
Solder rework not recommended
Recommended Soldering Temperature Profile
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Preliminary
QPA2962
®
2 ꢀ–ꢀ20 GHz 10 Watt GaN Amplifier
Handling Precautions
Parameter
Rating Standard
ESDꢀ–ꢀHuman Body Model (HBM)
ESDꢀ–ꢀCharged Device Model (CDM)
MSLꢀ–ꢀMoisture Sensitivity Level
1A
C3
3
ANSI/ESD/JEDEC JS-001
ANSI/ESD/JEDEC JS-002
IPC/JEDEC J-STD-020
Caution!
ESD-Sensitive Device
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU.
This product also has the following attributes:
Lead Free
Antimony Free
TBBP-A (C15H12Br402) Free
SVHC Free
PFOS Free
Contact Information
For the latest specifications, additional product information, worldw
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
© 2020 Qorvo US, Inc. All rights reserved. This document is subject to copyright laws in various jurisdictions worldwide and may not be
reproduced or distributed, in whole or in part, without the express written consent of Qorvo US, Inc.
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