QPA9418EVB-01 [QORVO]
High Linearity 0.5 W Small Cell PA;
| 型号： | QPA9418EVB-01 |
| 厂家： | 
Qorvo |
| 描述： | High Linearity 0.5 W Small Cell PA |
| 文件： | 总10页 (文件大小：946K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPA9418
High Linearity 0.5 W Small Cell PA
®
Product Overview
The QPA9418 is a high-linearity two-stage power amplifier
in a low-cost surface-mount package with on-chip bias
control and temperature control circuits, suitable for small
cell base station applications.
The QPA9418 provides 30.6ꢁdB gain and +27ꢁdBm linear
power over the 1805ꢁ–ꢁ1930ꢁMHz frequency range. This
amplifier is able to achieve −48ꢁdBc ACLR at +27ꢁdBm
output power using 20 MHz LTE signal.
7ꢀmmꢀxꢀ7ꢀmm Leadless SMT Package
The QPA9418 integrates two high performance amplifier
stages onto a module to allow for a compact system design
and requires very few external components for operation.
The amplifier is bias adjustable allowing the amplifier’s
power consumption to be optimized. The QPA9418 is
available in a 7ꢁxꢁ7ꢁmm surface mount package.
Key Features
• 1.805ꢁ–ꢁ1.930ꢁGHz Frequency Range
• Fully integrated, 2 Stage Power Amplifier
• Internally Matched 50ꢁΩ Input / Output
• −48ꢁdBc ACLR at Pavg = +27ꢁdBm
• 30.6ꢁdB Gain
• 14.5% PAE at +27ꢁdBm
• 420ꢁmA Quiescent Current
• On-chip Control Bias and Temp. Comp Circuit
Functional Block Diagram
Applications
• Small Cellꢁ/ꢁPicocell
• Enterprise Femtocell
• Customer Premises Equipment (CPE)
• Data Cards and Terminals
• Distributed Antenna Systems (DAS)
• Booster Amps, Repeaters
Vref
GND
GND
1
14
13
GND
2
GND
VCC1
RF in
RF out
VCC2
GND
3
4
5
12
11
10
Biasing Circuit
GND
NC
GND
GND
6
7
9
8
Backside Paddle
RF/DC GND
Ordering Information
Part No.
Description
Top View
QPA9418TR13
QPA9418EVB-01
2500 pieces on a 13” reel
1805 – 1930 MHz Evaluation board
Datasheet Rev. B, June 17, 2019 | Subject to change without notice
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QPA9418
®
High Linearity 0.5 W Small Cell PA
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
VCC1, VCC2
Vref
Min Typ Max Units
Storage Temperature
Supply Voltage (VCC)
Vref
−55 to +150ꢁ°C
+6 V
+3.6 +4.5 +5.25
V
+2.75 +2.85 +2.95
V
TCASE
−40
+85
°C
°C
+3.5 V
RF Input Power, CW, 50Ω, T=25°C
+13 dBm
+205°C
Tj at TCASE max
+165
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Tj at TCASE = 125°C
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: VCC1 = VCC2 = +4.5ꢁV, Vref = +2.85ꢁV, Temp= +25ꢁ°C
Parameter
Conditions
Min Typ Max Units
Operational Frequency Range
Test Frequency
Gain
1805
1930
MHz
MHz
dB
1840
30.6
20
28
15
34
Input Return Loss
Output Return Loss
P1dB
CW, Small Signal
CW
dB
25
dB
35.4
dBm
dBc
dBc
dBc
dBc
dBc
%
POUTꢁ+27ꢁdBm,ꢁ20ꢁMHzꢁLTEꢁE-TM1.1,ꢁ9.5ꢁdB PAR
POUT +27 dBm, 20ꢁMHz x 2 LTE E-TM1.1, 9.5dB PAR
POUT +27 dBm, 15ꢁMHz LTE E-TM1.1, 9.5dB PAR
POUT +27 dBm, 10ꢁMHz LTE E-TM1.1, 9.5dB PAR
POUT +27 dBm, 5ꢁMHz LTE E-TM1.1, 9.5dB PAR
POUTꢁ+27ꢁdBm,ꢁ20ꢁMHzꢁLTEꢁE-TM1.1,ꢁ9.5ꢁdB PAR
VCC1 + VCC2
−48.0 −45.0
−45.5
ACLR
−50.0
−49.0
−47.5
Power Added Efficiency
13
14.5
1
Quiescent Current, ICQ
330
420
3
510
10
mA
µA
Leakage Current on VCC
Reference Current , Iref
Operational Current, ICC
Wake Up Time
VCC +4.5V, Vref 0V
Temp -40°C to +85°C, Vref = +2.85V
POUT +27ꢁdBm, 20ꢁMHzꢁLTEꢁE-TM1.1,ꢁ9.5ꢁdB PAR
50% of control signal to 90% of the RF output
50% of control signal to 10% of the RF output
POUT ≤ +27dBm, In & Out of band load VSWR ≤ 10:1
No permanent degradation or failure
2F0 (POUT +27 dBm), CW signal
13
19.5
920
mA
mA
ns
680
1230
570
−60
Power Down Time
ns
Spurious Output Level
VSWR survivability
dBc
-
10:1
−46
−51
−65
−37
dBc
dBc
dBc
°C/W
Harmonics
3F0 (POUT +27 dBm), CW signal
4F0 (POUT +27 dBm), CW signal
−63
Thermal Resistance, θjc
Module (junction to case)
18.5
Notes:
1.
2.
Vcc1 draws very little current and provides the bias voltage to the current mirror circuit along with Vref to set the bias point for the whole amplifier.
Control signal applied to Vref Pin, 0 to 2.85V
Datasheet Rev. C, July 24, 2019 | Subject to change without notice
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QPA9418
®
High Linearity 0.5 W Small Cell PA
QPA9418 Application Circuit Schematic and Layout
Bill of Material - QPA9418EVB-01
Ref Designation
Value Description
Manufacture Part Number
-
-
Printed Circuit Board
Qorvo
U1
-
Amplifier, High Linearity 0.5 W Power
Resistor, Chip, 0603, 5%
Qorvo
various
various
various
various
various
various
QPA9418
R1
0 Ω
C1
0.01 μF
100 pF
0.1 μF
10 μF
1000 pF
Capacitor, Chip, 0603, 5%
C11
Capacitor, Chip, 0603, 5%
C3, C9
C5, C14
C6, C10
Capacitor, Chip, 0603, 5%
Capacitor, Chip, 6032, 10%, Tantalum
Capacitor, Chip, 0603, 5%, NPO/C0G
QPA9418EVB-01 Typical Performances
Test conditions unless otherwise noted: VCC1 = VCC2 = +4.5ꢁV, Vref = +2.85ꢁV, Pout 27dBm, 1840MHz, Signal PAR 9.5dB, Temp= +25ꢁ°C
LTE Signal BW
ACLR1-Low
5MHz
-47.9
10MHz
-48.8
15MHz
-49.6
20MHz
-49.1
20MHz x 2
-46.4
Units
dBc
ACLR1-high
-49.7
-50.1
-49.9
-49.7
-45.6
dBc
Parameter
Gain
Conditions
-40°C
32.2
+25°C
30.6
+85°C
28.8
Units
dB
dBc
%
ACLR
PAE
POUT = +27 dBm, 20ꢁMHz LTE E-TM1.1, 9.5dB PAR
-50.3
15.7
-49.1
14.7
-46.9
14.3
P1dB
CW
+35.8
+35.3
+34.7
dBm
Test Frequency = 1840MHz
Datasheet Rev. C, July 24, 2019 | Subject to change without notice
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QPA9418
®
High Linearity 0.5 W Small Cell PA
Performance Plots
Test conditions unless otherwise noted: VCC1 = VCC2 = +4.5V, Vref = +2.85ꢁV, LTE signal PAR = 9.5dB, Temp.=ꢁ+25ꢁ°C
Gain vs. Frequency
Input Return Loss vs. Frequency
40
38
36
34
32
30
28
26
24
22
20
0
-5
+85°C
+25°C
- 40°C
-10
-15
-20
-25
-30
-35
-40
+85°C
+25°C
- 40°C
18001810182018301840185018601870188018901900191019201930
18001810182018301840185018601870188018901900191019201930
Frequency (MHz)
Frequency (MHz)
Output Return Loss vs. Frequency
P1dB vs. Frequency
0
40
+85°C
+25°C
- 40°C
- 40°C
+25°C
+85°C
39
38
37
36
35
34
33
32
31
30
-5
-10
-15
-20
-25
-30
-35
-40
18001810182018301840185018601870188018901900191019201930
1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 1.89 1.90 1.91 1.92 1.93
Frequency (MHz)
Frequency (GHz)
ACLR vs. Pout, LTE 20MHz
ACLR vs. Pout at 1.84GHz
-34
-34
LTE 20MHz E-TM 1.1 PAR 9.5dB
- 40°C
+25°C
+85°C
-36
-38
-40
-42
-44
-46
-48
-50
-52
-54
-56
-58
-60
-62
-64
1.805GHz
1.840GHz
1.880GHz
1.920GHz
-36
-38
-40
-42
-44
-46
-48
-50
-52
-54
-56
-58
-60
-62
-64
LTE 20MHz E-TM 1.1 PAR 9.5dB
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Pout (dBm)
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Pout (dBm)
PAE vs. Pout at +25°C
PAE vs. Pout at 1.84GHz
22
20
18
16
14
12
10
8
22
20
18
16
14
12
10
8
LTE 20MHz E-TM 1.1 PAR 9.5dB
LTE 20MHz E-TM 1.1 PAR 9.5dB
- 40°C
1.805GHz
+25°C
+85°C
1.840GHz
1.880GHz
1.920GHz
6
6
4
4
2
2
0
0
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Pout (dBm)
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Pout (dBm)
Datasheet Rev. C, July 24, 2019 | Subject to change without notice
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QPA9418
®
High Linearity 0.5 W Small Cell PA
Performance Plots (continue)
Test conditions unless otherwise noted: VCC1 = VCC2 = +4.5V, Vref = +2.85ꢁV, LTE signal PAR = 9.5dB, Temp.=ꢁ+25ꢁ°C
ACLR vs. Pout, LTE 20MHz Vcc 5V
ACLR vs. Pout, LTE 5MHz
-34
-36
-38
-40
-42
-44
-46
-48
-50
-52
-54
-56
-58
-60
-62
-64
-34
-36
-38
-40
-42
-44
-46
-48
-50
-52
-54
-56
-58
-60
-62
-64
1.805GHz
1.840GHz
1.880GHz
LTE 20MHz E-TM 1.1 PAR 9.5dB at 25°C
LTE 5MHz E-TM 1.1 PAR 9.5dB
1.805GHz
1.840GHz
1.880GHz
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Pout (dBm)
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Pout (dBm)
ACLR vs. Pout, LTE 10MHz
ACLR vs. Pout, LTE 15MHz
-34
-36
-38
-40
-42
-44
-46
-48
-50
-52
-54
-56
-58
-60
-62
-64
-34
-36
-38
-40
-42
-44
-46
-48
-50
-52
-54
-56
-58
-60
-62
-64
1.805GHz
LTE 10MHz E-TM 1.1 PAR 9.5dB
1.805GHz
1.840GHz
1.880GHz
LTE 15MHz E-TM 1.1 PAR 9.5dB
1.840GHz
1.880GHz
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Pout (dBm)
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Pout (dBm)
ACLR vs. Pout, LTE 20MHz x 2
PAE vs. Pout, Carrier BW
-30
-32
-34
-36
-38
-40
-42
-44
-46
-48
-50
-52
-54
-56
-58
-60
22
20
18
16
14
12
10
8
1.840GHz LTE E-TM 1.1 PAR 9.5dB
1.805GHz
1.840GHz
1.880GHz
LTE 20MHz x 2 E-TM 1.1 PAR 9.5dB
5 MHz
10 MHz
15 MHz
20x2 MHz
6
4
2
0
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Pout (dBm)
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Pout (dBm)
Datasheet Rev. C, July 24, 2019 | Subject to change without notice
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QPA9418
®
High Linearity 0.5 W Small Cell PA
Pin Configuration and Description
Vref
1
GND
14
GND
2
GND
13
GND
3
RF out
12
VCC1
4
VCC2
11
Biasing Circuit
RF in
5
GND
10
GND
6
GND
9
Backside Paddle
RF/DC GND
NC
7
GND
8
Pin No.
Label
Description
1
Vref
Provides reference voltage for internal active biasing circuit
2, 3, 6, 8, 9, 10, 13, 14 GND
RF and DC ground.
4
VCC1
RFin
NC
Bias voltage for current mirror in combination with Vref to set the bias point.
RF input pin. The DC is internally blocked at this pin.
No internal connection. Can be left open or grounded for mounting integrity.
Supply to all stages.
5
7
11
12
VCC2
RFout
RF output pin. The DC is internally blocked at this pin.
Backside Paddle
RF/DC GND RF/DC ground. See PCB Mounting Pattern for suggested footprint.
Evaluation Board PCB Information
Qorvo PCB 284717 Material and Stack-up
1 oz. Cu top layer
Nelco N-4000-13
0.014"
1 oz. Cu inner layer
0.062" ± 0.006"
Finished Board
Thickness
Core
1 oz. Cu inner layer
1 oz. Cu bottom layer
Nelco N-4000-13
0.014"
50 Ω line dimensions: width = .028”
spacing = .028”.
Datasheet Rev. C, July 24, 2019 | Subject to change without notice
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QPA9418
®
High Linearity 0.5 W Small Cell PA
Mechanical Information
Package Marking and Dimensions
Marking: Part number – QPA9418
Trace code – Assigned by sub-contractor
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Dimension and tolerance formats conform to ASME Y14.4M-1994.
3. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012.
PCB Mounting Pattern
Notes:
1. A heat sink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can
occur without the use of one.
2. Ground / thermal via holes are critical for the proper performance of this device. Via holes should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
Datasheet Rev. C, July 24, 2019 | Subject to change without notice
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QPA9418
®
High Linearity 0.5 W Small Cell PA
Tape and Reel Information – Carrier and Cover Tape Dimensions
Feature
Measure
Symbol
Size (in)
0.295
0.295
0.059
0.472
0.079
0.295
0.524
0.630
Size (mm)
7.50
Length
A0
B0
K0
P1
P2
F
Width
7.50
Cavity
Depth
1.50
Pitch
12.0
Cavity to Perforation - Length Direction
2.00
Centerline Distance
Cavity to Perforation - Width Direction
7.50
Cover Tape
Carrier Tape
Width
Width
C
13.3
W
16.0
Datasheet Rev. C, July 24, 2019 | Subject to change without notice
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QPA9418
®
High Linearity 0.5 W Small Cell PA
Tape and Reel Information – Reel Dimensions (13”)
Standard T/R size = 2,500 pieces on a 13” reel.
Feature
Measure
Symbol
Size (in)
12.992
0.874
Size (mm)
330.0
22.2
Diameter
A
W2
W1
N
Flange
Thickness
Space Between Flange
Outer Diameter
Arbor Hole Diameter
Key Slit Width
Key Slit Diameter
0.661
16.8
4.016
102.0
13.0
C
0.512
Hub
B
0.079
2.0
D
0.787
20.0
Tape and Reel Information – Tape Length and Label Placement
Notes:
1. Empty part cavities at the trailing and leading ends are sealed with cover tape. See EIA 481-1-A.
2. Labels are placed on the flange opposite the sprockets in the carrier tape.
Datasheet Rev. C, July 24, 2019 | Subject to change without notice
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QPA9418
®
High Linearity 0.5 W Small Cell PA
Handling Precautions
Parameter
Rating
Standard
ESDꢀ–ꢀHuman Body Model (HBM)
Class 1A
ESDAꢁ/ꢁJEDEC JS-001-2012
JEDEC JESD22-C101F
IPC/JEDEC J-STD-020
Caution!
ESD-Sensitive Device
ESDꢀ–ꢀCharged Device Model (CDM) Class C3
MSLꢀ–ꢀMoisture Sensitivity Level
Level 3
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: Electrolytic plated Au over Ni (Plating thickness: Ni 5.0±30μm, Au 0.10μm minimum)
RoHS Compliance
This part is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes:
• Product uses RoHS Exemption 7c-I to meet RoHS Compliance requirements.
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
For technical questions and application information:
Email: appsupport@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Datasheet Rev. C, July 24, 2019 | Subject to change without notice
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