QPM2100SR [QORVO]
2.5 â 4.0 GHz Multi-Chip T/R Module;
| 型号： | QPM2100SR |
| 厂家： | 
Qorvo |
| 描述： | 2.5 â 4.0 GHz Multi-Chip T/R Module |
| 文件： | 总17页 (文件大小：1265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Product Description
The QPM2100 is a GaAs multi chip module (MCM)
designed for S-Band radar applications within the 2.5-4.0
GHz range. The device consists of a T/R switch, a transmit
path which is a low loss pass through, and a receive path
consists of a low-noise amplifier, a digital attenuator and
a driver amplifier. The receive path offers 30 dB of small
signal gain and 1.2 dB noise figure. It includes a 6 bit
digital step attenuator (DSA) with 31.5 dB gain control
range. It can deliver 14.5 dBm of power at P1dB with 34
dBm of output TOI. All functional MMIC blocks can be
enabled or DC powered off with internal control circuitry.
All control signals use CMOS compatible logic. The
response time of signal control is less than 15 nS.
The QPM2100 chips are fabricated on Qorvo's GaAs
0.25um process. The 7 x 7 OVM QFN surface mount
package, coupled with a proprietary die-attach process,
allows the QPM2100 to perform well at extreme
temperature ambient. Its compact size supports tight
lattice spacing requirements needed for S - Band phased
array radar applications.
Functional Block Diagram
Product Features
• Frequency Range: 2.5ꢀ–ꢀ4.0ꢀGHz
• RX Noise Figure: 1.2 dB
• RX Small Signal Gain: 30 dB
• RX Power at 1dB compression: 14.5 dBm
• RX OTOI : 34 dBm
• 6 Bit DSA Attenuation Range: 31.5 dB
• TX insertion loss: 1.2 dB
• Fast switching time: < 15 nS
• No need of negative bias
• Package Dimensions: OVM 7 x 7 x 0.8 mm
Performance is typical at room temperature.
Please reference electrical specification table and data
plots for more details.
Applications
Ordering Information
• Electronics Warfare (EW)
• Commercial and Military Radar
• Communications
Part No.
Description
QPM2100SR
Tape and Reel, Qty 100
QPM2100EVB02 QPM2100 Evaluation Board
Data Sheet Rev. A June 10, 2020
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Subject to change without notice
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QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Normal Operating Conditions
Parameter 1
Min
3.0
Typ
Max
3.6
Units
V
RX Drain Voltage (VD1, VD3)
3.3
RX LNA Quiescent Current (ID1) 2
RX Buffer Amplifier Drain Quiescent Current (ID3) 2
Device Enable Control (STBY) 3, 6
Device Enabling Control Current
DSA Logic Control Power Supply (VDSA) 4
DSA Logic Control Power Supply Current
Logic Control Voltage High (VH)
Logic Control Voltage Low (VL)
DSA Logic Control Bit Current (total)
Switch Control Voltage (TRSW) 3, 5
Switch Control Current
125
35
140
160
50
mA
mA
V
40
VL or VH
4
3.3
8
mA
V
2.5
5
mA
V
2.5
0
3.3
0
5
0.4
1.0
V
mA
V
VL or VH
2
mA
ꢀ°C
Operating Temperature Range
−55
25
95
1 Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended
operating conditions.
2. LNA and buffer amp (PA) are self-biased, current shown are typical ranges.
3. TRSW, STBY can use CMOS logic levels, “0” = “VL”, “1” = “VH”.
4. VDSA will draw current, it can use separate power supply or the same supply as VD1 and VD3.
5. TRSW Value set to “0” for RX ON, TX OFF; Value set to “1” for RX OFF, TX ON.
6. STBY Value set to “0” for LNA and PA powered on; Value set to “1” for LNA and PA powered off.
Attenuation States Control Bits Truth Table
Logic “0” = VL, Logic “1” = VH
B6
1
B2
1
B1
1
States
0 dB (Reference)
0.5 dB
1 dB
B5
1
B4
1
B3
1
1
1
1
1
1
0
1
1
1
1
0
1
2 dB
1
1
1
0
1
1
4 dB
1
1
0
1
1
1
8 dB
1
0
1
1
1
1
16 dB
0
1
1
1
1
1
31.5 dB
0
0
0
0
0
0
Data Sheet Rev. A June 10, 2020
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Subject to change without notice
- 2 of 17 -
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QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Electrical Specifications
Test conditions unless otherwise noted: VD = 3.3 V, ID1 = 140 mA, ID3 = 40 mA, VH= 3.3 V, VL = 0 V, VDSA = 3.3 V, 25 °C
Data de-embedded to device reference plane
Parameter
Frequency
Min
2.5
Typical
Max
4.0
Units
GHz
dB
RX Small Signal Gain 1
RX Noise Figure
RX Output Power
RX Input Return Loss
RX Output Return Loss
30
1.2
14.5
10
dB
dBm
dB
13
dB
2
RX Output TOI
34
dBm
dB
RX Attenuation Step (6 Bit)
0.5
31.5
−0.016
1.2
17
RX Attenuation Range
dB
RX Gain Temperature Coefficient
TX Insertion Loss
dB/°C
dB
TX Input Return Loss
dB
TX Output Return Loss
16
dB
Switching Speed between RX and TX using TRSW 3
Response time with STBY control 3
Channel Isolation (Receive On, TX Off) 4
Power Handling (RX Mode, LNA input port) 5
Power Handling (TX Mode, COMM port) 5
10
15
15
nS
10
nS
35
dBc
dBm
dBm
-15
20
1. Reference state (no attenuation).
2. At -29dBm Pin, 10 MHz tone spacing, reference states.
3. From 50% trig signal to 10% RF rising response or 90% RF falling response.
4. Leakage of switch when channel is off.
5. Linear operating power level.
Data Sheet Rev. A June 10, 2020
|
Subject to change without notice
- 3 of 17 -
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QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Small Signal,ꢀReceive Channel
Test Conditions unless otherwise stated:
VD1 = VD3 = 3.3 V, ID1 = 140 mA, ID3 = 40 mA, VH= 3.3 V, VL = 0 V, VDSA = 3.3 V, Reference State, 25 °C
Input Return Loss vs Temp
Gain vs Temp
0
-5
40
38
36
34
32
30
28
26
24
22
20
- 40C
+ 25C
+ 85C
-10
-15
-20
-25
-30
- 40C
+ 25C
+ 85C
2
2.5
3
3.5
4
4.5
5
2
2.5
3
3.5
4
4.5
5
Freq (GHz)
Freq (GHz)
Reverse Isolation vs Temp
Output Return Loss vs Temp
-50
-60
0
-5
- 40C
+ 25C
+ 85C
-10
-15
-20
-25
-30
-70
-80
-90
- 40C
3
+ 25C
+ 85C
-100
2
2.5
3.5
4
4.5
5
2
2.5
3
3.5
4
4.5
5
Freq (GHz)
Freq (GHz)
Data Sheet Rev. A June 10, 2020
|
Subject to change without notice
- 4 of 17 -
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QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Small Signal,ꢀReceive Channel
Test Conditions unless otherwise stated:
VD1= VD3 = 3.3 V, ID1 = 140 mA, ID3 = 40 mA, VH= 3.3 V, VL = 0 V, VDSA = 3.3 V, 25 °C
Gain vs Attenuation States Attenuation vs States
35
30
25
20
15
10
5
35
30
25
20
15
10
5
0dB
4dB
0.5dB
8dB
1dB
2dB
16dB
31.5dB
0dB
4dB
0.5dB
8dB
1dB
2dB
16dB
31.5dB
0
-5
-10
0
2
2
2
2.5
3
3.5
Freq (GHz)
4
4.5
5
5
5
2
2.5
3
3.5
Freq (GHz)
4
4.5
5
5
5
Input Return Loss vs Attenuation States
Output Return Loss vs Attenuation States
0
-5
0
-5
0dB
4dB
0.5dB
8dB
1dB
2dB
16dB
31.5dB
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
0dB
4dB
0.5dB
8dB
1dB
2dB
16dB
31.5dB
2.5
3
3.5
Freq (GHz)
4
4.5
2
2.5
3
3.5
Freq (GHz)
4
4.5
Relative Phase vs Attenuation States
Isolation vs Attenuation States
-50
-60
55
45
35
25
15
5
0dB
4dB
0.5dB
8dB
1dB
2dB
16dB
31.5dB
-70
-80
-90
0dB
4dB
0.5dB
8dB
1dB
2dB
16dB
31.5dB
-100
-5
2.5
3
3.5
Freq (GHz)
4
4.5
2
2.5
3
3.5
Freq (GHz)
4
4.5
Data Sheet Rev. A June 10, 2020
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Subject to change without notice
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QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Performance Plots, Receive Channel
Test Conditions unless otherwise stated:
VD1 = VD3 = 3.3 V, ID1 = 140 mA, ID3 = 40 mA, VH= 3.3 V, VL = 0 V, VDSA = 3.3 V, 25 °C
Attenuation vs All States
Relative Phase vs All States
Reference State
35
30
25
20
15
10
5
10
0
-10
-20
-30
-40
-50
Reference State 63
0
2
2.5
3
3.5
4
4.5
5
2
2.5
3
3.5
4
4.5
5
Freq (GHz)
Freq (GHz)
NF vs Attenuation States
NF vs Temperature
14.0
12.0
10.0
8.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 dB
4dB
0.5dB
8dB
1dB
2dB
31.5dB
6.0
16 dB
4.0
2.0
- 40 C
3
+ 25 C
+ 85 C
0.0
2
2.5
3.5
Title
4
4.5
5
2
2.5
3
3.5
Freq (GHz)
4
4.5
5
Data Sheet Rev. A June 10, 2020
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Subject to change without notice
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QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Large Signal, Receive Channel
Test Conditions unless otherwise stated:
VD1 = VD3 = 3.3 V, ID1 = 140 mA, ID3 = 40 mA, VH= 3.3 V, VL = 0 V, VDSA = 3.3 V, Reference State, 25 °C
Psat vs Temperature P1dB vs Temperature
20
19
18
17
16
15
14
13
12
11
10
20
19
18
17
16
15
14
13
12
11
10
- 40 C
3.1
+ 25 C
+ 85 C
3.3
- 40 C
3.1
+ 25 C
+ 85 C
3.3
2.9
3
3.2
3.4
-15
-15
3.5
-10
-10
2.9
3
3.2
3.4
3.5
-10
-10
Freq (GHz)
Freq (GHz)
Pout vs Pin
Power Gain vs Pin
16
14
12
10
8
36
34
32
30
28
26
6
4
2
0
-2
-4
-6
-8
-10
2.9 GHz
-30
3.2 GHz
3.5 GHz
-20
2.9 GHz
-30
3.2 GHz
3.5 GHz
-20 -15
-40
-35
-25
-40
-35
-25
Pin (dBm)
Pin (dBm)
LNA Current vs Pin
Buffer Amp Current vs Pin
150
140
130
120
110
100
50
45
40
35
30
25
20
2.9 GHz
-30
3.2 GHz
3.5 GHz
-20
2.9 GHz
-30
3.2 GHz
3.5 GHz
-20 -15
-40
-35
-25
-40
-35
-25
Pin (dBm)
Pin (dBm)
Data Sheet Rev. A June 10, 2020
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Subject to change without notice
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QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Linearity, Receive Channel
Test Conditions unless otherwise stated: Reference State, 25 °C
VD1 = VD3 = 3.3 V, ID1 = 140 mA, ID3 = 40 mA, VH= 3.3 V, VL = 0 V, VDSA = 3.3 V, Tone spacing: 10 MHz
IMD3 vs Temp
Output TOI vs Temp
40
38
36
34
32
30
28
26
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
- 40 C
+ 25 C
+ 85 C
- 40 C
+ 25 C
+ 85 C
Pin = - 29 dBm / tone
-12 -10 -8
-6
-4
-2
0
2
4
6
8
10 12
2.9
3
3.1
3.2
3.3
3.4
3.5
Pout (dBm / tone)
Freq (GHz)
IMD3 vs Pout
IMD5 vs Pout
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-30
-40
2.9 GHz
3.2 GHz
3.5 GHz
2.9 GHz
3.2 GHz
3.5 GHz
-50
-60
-70
-80
-90
-100
-110
-120
-12 -10 -8
-6
-4
-2
0
2
4
6
8
10 12
-12 -10 -8 -6 -4 -2
0
2
4
6
8
10 12
Pout (dBm / tone)
Pout (dBm / tone)
Data Sheet Rev. A June 10, 2020
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Subject to change without notice
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QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Small Signal, Transmit Channel
Test Conditions unless otherwise stated: Reference State, STBY = “0”, TRSW = “1”, 25 °C.
VD1 = VD3 = 3.3 V, ID1 = 140 mA, ID3 = 40 mA, VH= 3.3 V, VL = 0 V, VDSA = 3.3 V
Insertion Loss vs Temp
0.0
-0.5
-1.0
-1.5
- 40C
3
+ 25C
+ 85C
-2.0
2
2.5
3.5
4
4.5
5
Freq (GHz)
Input Return Loss vs Temp
Output Return Loss vs Temp
0
-5
0
-5
- 40C
+ 25C
+ 85C
- 40C
+ 25C
+ 85C
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
2
2.5
3
3.5
4
4.5
5
2
2.5
3
3.5
4
4.5
5
Freq (GHz)
Freq (GHz)
Leakage from Comm to TX Output
Leakage from RX Input to TX Output
0
-5
0
-5
- 40C
+ 25C
+ 85C
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10
-15
-20
-25
-30
-35
-40
-45
-50
Switch control for RX on, TX off
Switch control for RX on, TX off
- 40C
3
+ 25C
+ 85C
2
2.5
3
3.5
4
4.5
5
2
2.5
3.5
4
4.5
5
Freq (GHz)
Freq (GHz)
Data Sheet Rev. A June 10, 2020
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Subject to change without notice
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QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Large Signal, Transmit Channel
Test Conditions unless otherwise stated: TRSW = “1”, 25 °C
Pout vs Pin
20
15
10
5
0
-5
2.9 GHz
0
3.2 GHz
10
3.5 GHz
15
-10
-10
-5
5
20
Pin (dBm)
Insertion Loss vs Pin
Insertion Loss vs Pin vs Temp
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
Freq = 3.2 GHz
-40 C
0
+ 25 C
+ 85 C
10
2.9 GHz
3.2 GHz
3.5 GHz
10
-10
-5
5
15
20
-10
-5
0
5
15
20
Pin (dBm)
Pin (dBm)
Data Sheet Rev. A June 10, 2020
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Subject to change without notice
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QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Application Circuit
Bias-up Procedure
Bias-down Procedure
1. Set VD1 current limit to 200 mA, VD3 current limit to
100 mA. STBY current limit to 10 mA, DSA control
bits limit to 10 mA total, switch control current limit to
10 mA, VDSA limit to 20mA.
1. Turn off RF signal
2. Set VD1 and VD3 to 3.3 V, VDSA to 3.3V
3. Set TRSW = 0 V for RX mode (or 3.3 V for TX mode)
4. Set DSA bit control to required values
5. Set STBY to 0 V to enable device (if RX mode)
6. Apply RF signal
2. Set STBY = 3.3 V
3. Set VD1 = 0 V, VD3 = 0 V, VDSA = 0 V
4. Turn off drain supply
5. Turn off TRSW and STBY
6. Turn off VDSA Bias
Data Sheet Rev. A June 10, 2020
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Subject to change without notice
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QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Mechanical Drawing & Pad Description
Dimensions in mm. Package lead are gold plated. Part is mold encapsulated
Part Marking: QPM2100 = Part Number; YY = Part Assembly Year;
WW = Part Assembly Week; MXXX = Batch ID
Pin Number
Label
Description
3, 5, 11, 14, 23, 26, 32, 34, 38, 42, 44, 47
(Slug)
GND
GROUND
4
RXIN
Receive Input, DC Blocked
Drain Supply
6
VD1
10
STBY
Standby Mode Switch
T/R Switch Control
DSA Digital Bit Control
DSA Digital Bit Control
DSA Signal Control Bias
Drain Supply
15
TRSW
B2, B5, B1
B4, B3, B6
VDSA
16, 17, 18
19, 20, 21
29
31
33
43
VD3
COMM, RXOUT / TXIN Common Port, DC Blocked
TXOUT
Transmit Output, DC Blocked
1, 2, 7 - 9, 12, 13, 22, 24, 25, 27, 28, 30, 35 - 37
39 - 41, 45, 46, 48
N/C
No Internal Connections
Data Sheet Rev. A June 10, 2020
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Subject to change without notice
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QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Evaluation Board and Assembly
RF Layer is 0.008” thick Rogers Corp. RO4003C (εr = 3.35). Metal layers are 0.5 oz. copper. The microstrip line at the
connector interface is optimized for the Southwest Microwave end launch connector (1092-01A-5).
Bill of Materials
Ref. Des.
Component Value
Manuf. Part Number
C1, C2, C3
SMT Cap.
CAP, 0603 1.0uF +/-10% 50V X7R ROHS
Various
R1, R4, R5
SMT Res.
RES, 0402 10 OHM, 5%, ROHS
Various
Data Sheet Rev. A June 10, 2020
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QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Absolute Maximum Ratings
Parameter
Value
Units
V
mA
V
mA
V
Drain Voltage (VD1 and VD3)
Drain Current (ID1+ ID3)
Enabling Control Voltage (STBY)
Enabling Control Current
DSA Bias (VDSA)
5
250
0 to 5
5
5
DSA Bias Current
12
0 to 5
2
0 to 5
5
mA
V
mA
V
Bit Control Voltage (B1 to B6)
Bit Control Current (total)
Switch Control Voltage (TRSW)
Switch Control Current
mA
RF Input Power (Receive Mode)
RF Input Power (Transmit Mode, COMM and TXOUT Ports)
Channel Temperature, TCH
18
22
dBm
dBm
°C
150
Mounting Temperature (30 seconds)
Storage Temperature
260
−55 to 150
°C
°C
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions may
reduce device reliability.
Data Sheet Rev. A June 10, 2020
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QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Thermal and Reliability Information
Parameter
Test Conditions
Value Units
Thermal Resistance (θJC) (1)
Channel Temperature (TCH)
Median Lifetime (TM)
33.37
105.69
6.6E07
°C/W
TBASE = 85 °C
VD1 = VD3 = Control Voltage = 3.3 V
ID1 + ID3 + MISC Control =187 mA
PDISS = 0.62 W (All dies, LNA / RX ON, TX OFF)
°C
Hrs
Notes:
1. Thermal resistance is measured to back of the package.
Median Lifetime
Test Conditions: VD = 9 V
Failure Criteria = 10% reduction in ID_MAX
Median Lifetime vs. Channel Temperature
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
FET3
25
50
75
100
125
150
175
200
Channel Temperature, TCH (°C)
Data Sheet Rev. A June 10, 2020
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QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Solderability
1. Compatible with the latest version of J-STD-020, Lead-free solder, 260ꢀ°C.
Recommended Soldering Temperature Profile
Data Sheet Rev. A June 10, 2020
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QPM2100
2.5 –ꢀ4.0ꢀGHz Multi-Chip T/R Module
Handling Precautions
Parameter
Rating
1A
Standard
ESDꢀ–ꢀHuman Body Model (HBM)
ESDꢀ–ꢀCharged Device Model (CDM)
ESDAꢁ/ꢁJEDEC JS-001-2017
ESDAꢁ/ꢁJEDEC JS-002-2014
Caution! JS-002
ESD-Sensitive Device
C2A
JEDEC standard IPC/JEDEC
J-STD-020
MSLꢀ–ꢀConvection Reflow 260ꢀ°C
3
RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, romine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Tel: 1-844-890-8163
Web: www.qorvo.com
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2020 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet Rev. A June 10, 2020
|
Subject to change without notice
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