RF5110G [QORVO]
3V General Purpose/GSM Power Amplifier;
| 型号： | RF5110G |
| 厂家： | 
Qorvo |
| 描述： | 3V General Purpose/GSM Power Amplifier GSM |
| 文件： | 总16页 (文件大小：2296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF5110G
3V General Purpose/GSM Power Amplifier
®
Product Overview
The RF5110G is a high-power, high-gain, high-efficiency
power amplifier. The device is manufactured with an
advanced GaAs HBT process. It is designed for use as the
final RF amplifier in GSM hand-held equipment in 900 MHz
band, and General-Purpose radio application in standard
sub-bands from 150 MHz to 960 MHz. An analog on-board
power controller provides over 70 dB range of adjustment.
Which allows for power down with a voltage equals to the
logic “Low” to set the device in standby mode. The
RF5110G RF Input is internally matched to 50 Ω. On its RF
Output, it can be easily matched externally to obtain
optimum power and efficiency for certain applications.
16 Pad 3ꢀxꢀ3ꢀmm QFN Package
Key Features
General Purpose:
• Single 2.8 V to 3.6 V Supply
• +32 dBm Output Power
• 53% Efficiency
• 150 MHz to 960 MHz Operation
GSM:
• Single 2.7 V to 4.8 V Supply
• +36 dBm Output Power at 3.6 V
• 32 dB Gain with Analog Gain Control
• 57% Efficiency
• 800 MHz to 950 MHz Operation
• Supports GSM and E-GSM
Functional Block Diagram
Applications
• FM Radio Applications
150 MHz/220 MHz/450 MHz
865 MHz to 928 MHz
• 3 V GSM Cellular Handsets
• GPRS Compatible
Ordering Information
Top View
Part No.
Description
RF5110GTR7
RF5110GPCK-410
2,500 pieces on a 7” reel (standard)
GSM900 Fully Tested Evaluation Board
Datasheet, Rev. F, December 22, 2020 | Subject to change without notice
1 of 16
www.qorvo.com
RF5110G
®
3 V General Purpose/GSM Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Min
+2.7
−40
Typ
Max
Units
Storage Temperature
−55ꢁ°C to +150ꢁ°C
-0.5 V to +6.0 V
-0.5 V to +3.0 V
2400 mA
+3.5
Device Voltage
(VCC, VCC1, VCC2
Device Voltage (VCC, VCC1, VCC2
)
+4.8(1)
+5.5(1)(2)
+85
V
V
)
Control Voltage (VAPC1, VAPC2
)
Device Current (ICC, ICC1, ICC2
RF Input Power
)
TCASE
TJ
°C
°C
+13 dBm
+150
Note:
Duty Cycle at Max Power
50%
1. POUT < +35 dBm
2. With maximum output load VSWR 6:1
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability. This rating specified for GSM operation.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Parameter
Output Power
Gain
Conditionsꢀ(1)
Min
Typ
32
Max
Units
dBm
dB
150 MHz
31.5
53
Efficiency
Output Power
Gain
%
32
dBm
dB
220 MHz
32
Efficiency
Output Power
Gain
52
%
32
dBm
dB
450 MHz; VCC, VCC1 and VCC2 = 3.0 V
32.5
50.5
32
Efficiency
Output Power
Gain
%
dBm
dB
865 MHz to 928 MHz
Equals typical at respective frequency corner
33.0
29.5
Efficiency
49
%
Notes:
1. Test conditions unless otherwise noted: VAPC1 and VAPC2ꢁ=ꢁ2.8 V; VCC, VCC1 and VCC2ꢁ=ꢁ3.3 V; Duty Cycle = 100%; Tempꢁ=ꢁ+25ꢁ°C; 50ꢁΩ system;
Refer to application circuits
Datasheet, Rev. F, December 22, 2020 | Subject to change without notice
2 of 16
www.qorvo.com
RF5110G
®
3 V General Purpose/GSM Power Amplifier
Electrical Specifications (continue)
Parameter
Conditionsꢀ(1)
Min
880
800
33.8
33.1
50
Typ
Max
915
950
Units
MHz
MHz
dBm
dBm
%
Operational Frequency Range
Usable Frequency Range
Using different EVB tune
34.5
Maximum Output Power
Temp = +60 °C, VCC, VCC1 and VCC2 = 3.3 V
At Maximum Output Power
POUT = +20 dBm
57
12
5
Efficiency
%
POUT = +10 dBm
%
Input Power for Max. Output
4.5
7.0
9.5
-72
dBm
RBW = 100 KHz; 925-935 MHz;
VCC, VCC1 and VCC2 = 3.3 to 5.0V
dBm
dBm
dBm
Output Noise Power
Forward Isolation
RBW =100 KHz; 935-960 MHz;
VCC, VCC1 and VCC2 = 3.3 to 5.0V
-81
-22
Standby Mode VAPC1 and VAPC2 = 0.3 V,
PIN = +9.5 dBm
Second Harmonic
PIN = +9.5 dBm
PIN = +9.5 dBm
-20
-25
-7
-7
dBm
dBm
dBm
Ω
Third Harmonic
Non-Harmonic Spurious
Input Impedance
-36
50
Optimum Source Impedance
For best noise performance
(POUT, MAX - 5 dB) < Pout < POUT.MAX
POUT < (POUT.MAX - 5 dB)
40 + j10
Ω
2.5:1
4.0:1
Input VSWR
Spurious < -36dBm, RBW=100KHz
VAPC1 and VAPC2 from 0.3 V to 2.6 V
Output Load VSWR, Stability
8:1
Output Load VSWR, Ruggedness
Output Load Impedance
Power Control “ON” Voltage
Power Control “OFF” Voltage
Gain Control Range
No damage
10:1
Load Impedance presented at RF OUT pad
VAPC1, VAPC2; Maximum POUT
VAPC1, VAPC2; Minimum POUT
VAPC1 and VAPC2 from 0.2 V to 2.6 V
POUT from -10 dBm to +35 dBm
DC to 2 MHz
2.6 – j1.5
0.5
Ω
V
2.6
0.2
75
5
V
dB
dB/V
pF
Gain Control Slope
100
150
10
APC Input Capacitance
VAPC1 and VAPC2 = 2.8V
4.5
5
mA
µA
ns
APC Input Current
Turn ON/OFF Time
VAPC1 and VAPC2 = 0 V
25
VAPC1 and VAPC2 from 0 V to 2.8V
At Maximum Output Power
Quiescent, PIN < -30dBm
100
2
200
1
A
15
335
10
mA
µA
µA
°C/W
Device Current
(ICC, ICC1, and ICC2
)
Standby Mode, PIN < -30dBm
Standby Mode, PIN < -30dBm, Temp = +85°C
CW Mode, Junction to Case
1
10
Thermal Resistance
Notes:
25.6
1. Test conditions unless otherwise noted: VAPC1ꢁand VAPC2ꢁ=ꢁ2.8 V; VCC, VCC1 and VCC2ꢁ=ꢁ3.6 V; PIN = +4.5 dBm; Pulse Width = 1731 µs; Duty Cycle =
37.5%; Tempꢁ=ꢁ+25ꢁ°C; 50ꢁΩ system; Refer to RF5110GPCK-410 GSM900 evaluation board circuit.
Datasheet, Rev. F, December 22, 2020 | Subject to change without notice
3 of 16
www.qorvo.com
RF5110G
®
3 V General Purpose/GSM Power Amplifier
150 MHz FM Band Application Circuit
220 MHz FM Band Application Circuit
Datasheet, Rev. F, December 22, 2020 | Subject to change without notice
4 of 16
www.qorvo.com
RF5110G
®
3 V General Purpose/GSM Power Amplifier
450 MHz FM Band Application Circuit
865 MHz and 902 MHz to 928 MHz ISM Band Application Circuit
Datasheet, Rev. F, December 22, 2020 | Subject to change without notice
5 of 16
www.qorvo.com
RF5110G
®
3 V General Purpose/GSM Power Amplifier
850 MHz GSM Band Application Circuit
GSM900 Evaluation Board Circuit, RF5110GPCK-410
Datasheet, Rev. F, December 22, 2020 | Subject to change without notice
6 of 16
www.qorvo.com
RF5110G
®
3 V General Purpose/GSM Power Amplifier
Performance Plots – 150 MHz
Datasheet, Rev. F, December 22, 2020 | Subject to change without notice
7 of 16
www.qorvo.com
RF5110G
®
3 V General Purpose/GSM Power Amplifier
Performance Plots – 220 MHz
Datasheet, Rev. F, December 22, 2020 | Subject to change without notice
8 of 16
www.qorvo.com
RF5110G
®
3 V General Purpose/GSM Power Amplifier
Performance Plots – 450 MHz
Datasheet, Rev. F, December 22, 2020 | Subject to change without notice
9 of 16
www.qorvo.com
RF5110G
®
3 V General Purpose/GSM Power Amplifier
Performance Plots – 865 MHz to 925 MHz
Datasheet, Rev. F, December 22, 2020 | Subject to change without notice
10 of 16
www.qorvo.com
RF5110G
®
3 V General Purpose/GSM Power Amplifier
Pad Configuration and Description
Top View
Pad No. Label
Description
Interface Circuit
Power supply for the pre-amplifier stage and interstage matching. This pin
forms the shunt inductance needed for proper tuning of the interstage
match. Refer to the application circuit for proper configuration. Note that
position and value of the components are important.
1
VCC1
Ground connection for the pre-amplifier stage. Keep traces physically short
and connect immediately to the ground plane for best performance. For
stability concert, this pin requires dedicated ground via holes to the ground
plane to minimize any common inductance.
2
3
GND1
RF IN
RF Input. This is a 50Ω input, but the actual impedance could be affected by
the interstage matching network connected on pin 1. An external DC
blocking capacitor is required.
Ground connection for the driver stage. To minimize the noise power at the
output, it is recommended to connect this pin with a trace of about 40mil
long to the ground plane. This will slightly reduce the small signal gain. For
stability concert, this pin requires dedicated ground via holes to the ground
plane to minimize any common inductance.
4
GND2
Power supply for the driver stage and interstage matching. This pin requires
5, 6
VCC2
NC
a shunt inductance for proper interstage matching. Please refer to the
application schematic for proper configuration.
7, 13
Not connected.
Connection for the second harmonic trap. This pin is internally connected
to the RF OUT pins. With the bonding wire together with an external
capacitor form a series resonator. It should provide a second harmonic short
termination to improve amplifier efficiency and reduce spurious outputs.
8
2F0
RF Output and power supply for the output stage. Bias voltage for the final
stage is provided through this wide output pins. An external matching
network is required to provide the optimum performance.
9, 10, 11,
12
RF OUT
Datasheet, Rev. F, December 22, 2020 | Subject to change without notice
11 of 16
www.qorvo.com
RF5110G
®
3 V General Purpose/GSM Power Amplifier
Pad Configuration and Description (continue)
Pad No. Label
Description
Interface Circuit
14
15
VCC
Power supply for the bias circuits.
APC2
Power Control for the output stage. See pin 16 for more details.
Power Control for the driver and pre-amplifier stages. When this pin is "low,"
all circuits shut off. A "low" is typically 0.5V or less at room temperature.
A shunt bypass capacitor is required. For a typical power control operation,
the VAPC1 is about 1.0V for -10dBm to 2.6V for +35dBm RF output power.
The maximum power that can be achieved depends on the actual output
matching; see the application circuit for more details.
16
APC1
GND
RF/DC ground. Ground connection for the output stage. This pad should be
connected to the ground plane by ground via holes directly under the device.
A short path is required to obtain optimum performance, as well as to
provide a good thermal path to the PCB for maximum heat dissipation.
Backside
Paddle
Evaluation Board PCB Information
Evaluation Board: Size 2.0” x 2.0”; Material FR-4; Multi-Layer; Thickness 0.032”
Datasheet, Rev. F, December 22, 2020 | Subject to change without notice
12 of 16
www.qorvo.com
RF5110G
®
3 V General Purpose/GSM Power Amplifier
Package Marking and Dimensions
Marking: Part Number – RF5110
Trace Code – Assigned by sub-contractor
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012.
3. Contact plating: Matte Sn
PCB Mounting Pattern
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Use 1 oz. copper minimum for top and bottom layer metal.
3. ground via holes are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. 0.203 mm to 0.330
mm finished hole size and 0.5 mm to 1.2 mm grid pattern recommended.
4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance.
Datasheet, Rev. F, December 22, 2020 | Subject to change without notice
13 of 16
www.qorvo.com
RF5110G
®
3 V General Purpose/GSM Power Amplifier
Tape and Reel Information – Carrier and Cover Tape Dimensions
Feature
Measure
Symbol
Size (in)
0.125
0.125
0.040
0.157
0.079
0.217
0.362
0.472
Size (mm)
3.20
Length
A0
B0
K0
P1
P2
F
Width
3.20
Cavity
Depth
1.00
Pitch
4.00
Cavity to Perforation - Length Direction
2.00
Centerline Distance
Cavity to Perforation - Width Direction
5.50
Cover Tape
Carrier Tape
Width
Width
C
9.20
W
12.0
Datasheet, Rev. F, December 22, 2020 | Subject to change without notice
14 of 16
www.qorvo.com
RF5110G
®
3 V General Purpose/GSM Power Amplifier
Tape and Reel Information – Reel Dimensions
Standard T/R size = 2,500 pieces on a 7” reel.
Feature
Measure
Symbol
Size (in)
6.969
0.717
0.504
2.283
0.512
0.079
0.787
Size (mm)
177
Diameter
A
W2
W1
N
Flange
Thickness
18.2
Space Between Flange
Outer Diameter
Arbor Hole Diameter
Key Slit Width
Key Slit Diameter
12.8
58.0
C
13.0
Hub
B
2.0
D
20.0
Tape and Reel Information – Tape Length and Label Placement
Notes:
1. Empty part cavities at the trailing and leading ends are sealed with cover tape. See EIA 481-1-A.
2. Labels are placed on the flange opposite the sprockets in the carrier tape.
Datasheet, Rev. F, December 22, 2020 | Subject to change without notice
15 of 16
www.qorvo.com
RF5110G
®
3 V General Purpose/GSM Power Amplifier
Handling Precautions
Parameter
Rating
Class 0
Class A
Level 2
Standard
ESDꢁ–ꢁHuman Body Model (HBM)
ESDꢁ–ꢁMachine Model
JESD22-A114
JESD22-A115
Caution!
ESD-Sensitive Device
MSLꢁ–ꢁMoisture Sensitivity Level
IPC/JEDEC J-STD-020
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: Matte Sn
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Pb
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2020 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Datasheet, Rev. F, December 22, 2020 | Subject to change without notice
16 of 16
www.qorvo.com
相关型号：
©2020 ICPDF网 联系我们和版权申明