EDB105S-T [RECTRON]
Bridge Rectifier Diode, 1 Phase, 1A, 300V V(RRM), Silicon, PLASTIC, DB-S, 4 PIN;
| 型号： | EDB105S-T |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Bridge Rectifier Diode, 1 Phase, 1A, 300V V(RRM), Silicon, PLASTIC, DB-S, 4 PIN 光电二极管 |
| 文件： | 总3页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EDB101S
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
EDB107S
GLASS PASSIVATED SUPER FAST
SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere
FEATURES
* Surge overloading rating - 30 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
DB-S
* Weight: 1.0 gram
(
)
)
.310 7.9
(
.290 7.4
MECHANICAL DATA
(
)
)
.255 6.5
*
Epoxy : Device has UL flammability classification 94V-0
(
.245 6.2
.009
(
)
)
)
.013 .330
(
)
0.229
(
.003 .076
(
)
)
.042 1.1
(
.410 10.4
(
.038 1.0
(
)
.360 9.4
(
)
.060 1.524
(
)
.040 1.016
(8.8)
(7.8)
.346
.307
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(
)
)
.135 3.4
(
.115 2.9
(
)
)
.205 5.2
(
.195 5.0
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA
= 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
SYMBOL
UNITS
EDB102S EDB103S EDB104S EDB105S EDB106S EDB107S
EDB101S
Volts
Volts
Volts
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
V
V
RRM
RMS
Maximum DC Blocking Voltage
Maximum Average Forward Current
100
V
DC
O
Amps
Amps
1.0
30
I
at TA
= 55oC
Peak Forward Surge Current IFM (surge): 8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
I
FSM
Typical Junction Capacitance (Note 2)
10
pF
0 C
C
J
15
Operating and Storage Temperature Range
-55 to + 150
TJ, TSTG
ELECTRICAL CHARACTERISTICS (At T
A
= 25oC unless otherwise noted)
SYMBOL
UNITS
Volts
CHARACTERISTICS
EDB103S EDB104S EDB105S EDB106S EDB107S
EDB101S EDB102S
Maximum Forward Voltage at 1.0A DC
VF
1.05
1.35
1.70
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
@T
A
A
= 25oC
=150oC
5.0
50
50
I
R
uAmps
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I =0.5A, I =-1.0A, IRR=-0.25A.
2. Measured at 1 MH and applied reverse voltage of 4.0 volts.
trr
nSec
F
R
2002-12
Z
(
)
RATING AND CHARACTERISTIC CURVES EDB101S THRU EDB107S
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
trr
NONINDUCTIVE
2.0
1.0
0
+0.5A
Single Phase
Half Wave 60Hz
Resistive or
( - )
PULSE
D.U.T
Inductive Load
( + )
0
25 Vdc
(approx)
( - )
GENERATOR
(NOTE 2)
-0.25A
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
-1.0A
0
25 50 75 100 125150175
1cm
1
Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
NOTES:
SET TIME BASE FOR
10 ns/cm
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
100
10
T
T
= 150
= 100
J
1.0
EDB107S
J
EDB105S~EDB106S
EDB101S~EDB104S
.1
1.0
T
= 25
T
= 25
J
J
.01
.1
Pulse Width = 300uS
1% Duty Cycle
.001
.01
0
20
40
60
80 100 120 140
0
.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
35
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
30
25
40
20
20
8.3ms Single Half Sine-Wave
(JEDED Method)
15
10
6
T
= 25
J
10
5
4
2
1
0
1
2
5
10 20
50
100
.1 .2 .4
1.0
2
4
10 20 40 100
REVERSE VOLTAGE, ( V )
NUMBER OF CYCLES AT 60Hz
RECTRON
Mounting Pad Layout
0.404 MAX.
(10.26 MAX.)
0.205 (5.2)
0.195 (5.0)
0.047 MIN.
(1.20 MIN.)
0.060 MIN.
(1.52 MIN.)
Dimensions in inches and (millimeters)
RECTRON
相关型号：
EDB106S
GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere)
RECTRON
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