MMBTA42 [RECTRON]
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN); SOT- 23双极晶体管晶体管（ NPN ）
| 型号： | MMBTA42 |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) |
| 文件： | 总4页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA42
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* High breakdown voltage
* Low collector-emitter saturation voltage
* Complementary to MMBTA92 (NPN)
SOT-23
COLLECTOR
3
MECHANICAL DATA
* Case: Molded plastic
1
BASE
0.055(1.40)
0.047(1.20)
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
2
EMITTER
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
* Weight: 0.008 gram
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1
2
0.019(2.00)
0.071(1.80)
0.118(3.00)
0.110(2.80)
3
Dimensions in inches and (millimeters)
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
VALUE
UNITS
Collector Current-Continuous
Collector Power Dissipation
IC
PC
TJ
0.3
350
150
A
mW
oC
Max. Operating Temperature Range
Storage Temperature Range
TSTG
oC
-55 to +150
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS SYMBOL
Collector-base breakdown voltage (I =100uA,I =0)
MIN.
TYP.
MAX.
UNITS
V(BR)CBO
V(BR)CEO
300
300
-
-
-
-
V
V
C
E
Collector-emitter breakdown voltage (I =1mA,I =0)
C
B
Emitter-Base breakdown voltage (I =100uA,I =0)
V(BR)EBO
ICBO
5
-
-
-
-
-
-
0.25
0.1
-
V
uA
uA
-
E
C
Collector cut-off current (V =200V,I =0)
CB
E
Emitter cut-off current (V =5V,I =0)
IEBO
-
EB
C
hFE(1)
60
(V =10V,I =1mA)
CE
C
DC current gain
(V =10V,I =10mA)
hFE(2)
hFE(3)
100
-
-
-
-
200
-
-
-
CE
C
60
-
(V =10V,I =30mA)
CE
C
Collector-emitter saturation voltage (I =20mA,I =2mA)
VCE(sat)
VBE(sat)
0.2
0.9
V
V
C
B
Base-emitter saturation voltage (I =20mA,I =2mA)
-
C
B
Transition frequency (V =20V,I =10mA,f=30MHz)
fT
50
-
-
MHz
CE
C
Note: "Fully ROHS Complant", "100% Sn plating (Pb-free)".
2007-5
RATING AND CHARACTERISTICS CURVES ( MMBTA42 )
0.3
V
CE
=5V
140
120
β =10
0.25
O
125 C
100
80
0.2
O
25 C
O
0.15
125 C
60
O
-40 C
0.1
40
20
O
25 C
O
-40 C
0.05
0.1
1
10
100
0.1
1
10
100
I
, COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2 Collector-Emitter Saturation Voltage
vs. Collector Current
Figure 1 DC Current Gain vs. Collector Current
1
1
0.8
0.6
0.4
0.2
V
CE
=1V
β =10
O
-40 C
0.8
0.6
O
-40 C
O
25 C
O
25 C
O
125 C
O
125 C
0.4
0.2
0.1
1
10
100
0.1
1
10
I , COLLECTOR CURRENT (mA)
C
100
I
, COLLECTOR CURRENT (mA)
C
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 4 Base-Emitter ON Voltage vs.
Collector Current
RATING AND CHARACTERISTICS CURVES ( MMBTA42 )
100
100
V
CB
=150V
50
20
10
5
C
eb
10
C
cb
2
1
1
25
50
75
100
125
150
1
10
100
1000
O
T
, AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
A
Figure 5 Collector-Cut off Current vs.
Ambient Temperature
Figure 6 Collector-Base and Emitter-Base Capacitance
vs. Reverse Bias Voltage
1
0.75
0.5
0.25
0
0
25
50
75
100
125
150
O
TEMPERATURE ( C)
Figure 7 Power dissipation vs.
Ambient Temperature
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
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DIODES
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