HIP6004BCVZA-T [RENESAS]

Buck and Synchronous-Rectifier (PWM) Controller and Output Voltage Monitor HIP6004B; SOIC20, TSSOP20; Temp Range: 0° to 70°;
HIP6004BCVZA-T
型号: HIP6004BCVZA-T
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Buck and Synchronous-Rectifier (PWM) Controller and Output Voltage Monitor HIP6004B; SOIC20, TSSOP20; Temp Range: 0° to 70°

输入元件 开关 光电二极管
文件: 总15页 (文件大小:896K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATASHEET  
HIP6004B  
FN4567  
Rev 3.00  
November 9, 2004  
Buck and Synchronous-Rectifier (PWM) Controller and Output Voltage Monitor  
The HIP6004B provides complete control and protection for  
a DC-DC converter optimized for high-performance  
Features  
• Drives Two N-Channel MOSFETs  
• Operates from +5V or +12V Input  
microprocessor applications. It is designed to drive two  
N-Channel MOSFETs in a synchronous-rectified buck  
topology. The HIP6004B integrates all of the control, output  
adjustment, monitoring and protection functions into a single  
package.  
• Simple Single-Loop Control Design  
- Voltage-Mode PWM Control  
• Fast Transient Response  
- High-Bandwidth Error Amplifier  
- Full 0% to 100% Duty Ratio  
The output voltage of the converter is easily adjusted and  
precisely regulated. The HIP6004B includes a fully  
TTL-compatible 5-input digital-to-analog converter (DAC)  
that adjusts the output voltage from 1.3V  
to 2.05V  
in  
DC  
• Excellent Output Voltage Regulation  
DC  
in 0.1V increments steps.  
0.05V and from 2.1V  
to 3.5V  
- 1% Over Line Voltage and Temperature  
DC  
DC  
The precision reference and voltage-mode regulator hold the  
selected output voltage to within 1% over temperature and  
line voltage variations.  
• TTL-Compatible 5-Bit Digital-to-Analog Output  
Voltage Selection  
- Wide Range . . . . . . . . . . . . . . . . . . . 1.3V  
- 0.1V Binary Steps . . . . . . . . . . . . . . 2.1V  
to 3.5V  
to 3.5V  
DC  
DC  
DC  
DC  
DC  
The HIP6004B provides simple, single feedback loop,  
voltage-mode control with fast transient response. It includes  
a 200kHz free-running triangle-wave oscillator that is  
adjustable from below 50kHz to over 1MHz. The error  
amplifier features a 15MHz gain-bandwidth product and  
6V/s slew rate which enables high converter bandwidth for  
fast transient performance. The resulting PWM duty ratio  
ranges from 0% to 100%.  
- 0.05V Binary Steps . . . . . . . . . . . . 1.3V  
to 2.05V  
DC  
• Power-Good Output Voltage Monitor  
• Over-Voltage and Over-Current Fault Monitors  
- Does Not Require Extra Current Sensing Element,  
Uses MOSFET’s r  
DS(ON)  
• Small Converter Size  
The HIP6004B monitors the output voltage with a window  
comparator that tracks the DAC output and issues a Power  
Good signal when the output is within 10%. The HIP6004B  
protects against over-current and overvoltage conditions by  
inhibiting PWM operation. Additional built-in overvoltage  
protection triggers an external SCR to crowbar the input  
supply. The HIP6004B monitors the current by using the  
- Constant Frequency Operation  
- 200kHz Free-Running Oscillator Programmable from  
50kHz to over 1MHz  
• QFN Package:  
- Compliant to JEDEC PUB95 MO-220  
QFN - Quad Flat No Leads - Package Outline  
- Near Chip Scale Package footprint, which improves  
PCB efficiency and has a thinner profile  
r
of the upper MOSFET which eliminates the need for  
DS(ON)  
a current sensing resistor.  
• Pb-Free Available (RoHS Compliant)  
Applications  
• Power Supply for Pentium®, Pentium Pro, Pentium II,  
PowerPC™, K6™, 6X86™ and Alpha™ Microprocessors  
High-Power 5V to 3.xV DC-DC Regulators  
Low-Voltage Distributed Power Supplies  
FN4567 Rev 3.00  
November 9, 2004  
Page 1 of 15  
HIP6004B  
HIP6004B  
Pinouts  
HIP6004B (SOIC, TSSOP)  
HIP6004B (QFN)  
TOP VIEW  
TOP VIEW  
1
2
3
4
5
6
7
8
9
RT  
V
20  
19  
SEN  
OCSET  
SS  
OVP  
20 19 18 17 16  
18 V  
CC  
VID0  
VID1  
VID2  
VID3  
VID4  
VCC  
1
2
3
4
5
15  
14  
13  
12  
11  
VID0  
VID1  
VID2  
VID3  
VID4  
COMP  
17 LGATE  
16 PGND  
LGATE  
PGND  
BOOT  
UGATE  
15  
BOOT  
GND  
21  
14 UGATE  
13 PHASE  
12  
PGOOD  
FB 10  
11 GND  
6
7
8
9
10  
Ordering Information  
TEMP.  
PKG.  
PART NUMBER  
RANGE (°C)  
PACKAGE  
DWG. #  
HIP6004BCB*  
0 to 70  
20 Ld SOIC  
M20.3  
HIP6004BCBZ*  
(See Note)  
0 to 70  
20 Ld SOIC  
(Pb-free)  
M20.3  
HIP6004BCV*  
0 to 70  
0 to 70  
20 Ld TSSOP  
M20.173  
M20.173  
HIP6004BCVZ*  
(See Note)  
20 Ld TSSOP  
(Pb-free)  
HIP6004BCVZA*  
(See Note)  
20 Ld TSSOP Tape and Reel  
(Pb-free)  
M20.173  
HIP6004BCR*  
0 to 70  
0 to 70  
20 Ld 5x5 QFN  
L20.5x5  
L20.5x5  
HIP6004BCRZ*  
(See Note)  
20 Ld 5x5 QFN  
(Pb-free)  
*Add “-T” suffix to part number for tape and reel packaging.  
NOTE: Intersil Pb-free products employ special Pb-free material  
sets; molding compounds/die attach materials and 100% matte tin  
plate termination finish, which are RoHS compliant and compatible  
with both SnPb and Pb-free soldering operations. Intersil Pb-free  
products are MSL classified at Pb-free peak reflow temperatures that  
meet or exceed the Pb-free requirements of IPC/JEDEC J STD-  
020C.  
FN4567 Rev 3.00  
November 9, 2004  
Page 2 of 15  
HIP6004B  
HIP6004B  
Typical Application  
+12V  
V
= +5V OR +12V  
IN  
VCC  
PGOOD  
OCSET  
EN  
MONITOR AND  
PROTECTION  
SS  
OVP  
BOOT  
RT  
OSC  
UGATE  
PHASE  
VID0  
VID1  
VID2  
VID3  
VID4  
+V  
HIP6004B  
OUT  
D/A  
LGATE  
PGND  
-
+
+
-
FB  
COMP  
GND  
VSEN  
Block Diagram  
V
CC  
V
SEN  
POWER-ON  
110%  
RESET (POR)  
+
-
PGOOD  
90%  
+
-
OVER-  
VOLTAGE  
10A  
115%  
+
-
OVP  
SS  
SOFT-  
START  
+
-
OCSET  
OVER-  
CURRENT  
BOOT  
REFERENCE  
UGATE  
200A  
4V  
PHASE  
PWM  
COMPARATOR  
VID0  
VID1  
VID2  
VID3  
VID4  
TTL D/A  
CONVERTER  
(DAC)  
DACOUT  
GATE  
CONTROL  
LOGIC  
INHIBIT  
PWM  
+
-
+
-
ERROR  
AMP  
LGATE  
PGND  
GND  
FB  
COMP  
RT  
OSCILLATOR  
FN4567 Rev 3.00  
November 9, 2004  
Page 3 of 15  
HIP6004B  
HIP6004B  
Absolute Maximum Ratings  
Thermal Information  
o
o
Supply Voltage, V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+15V  
Thermal Resistance  
JA ( C/W) JC ( C/W)  
CC  
Boot Voltage, V  
- V  
. . . . . . . . . . . . . . . . . . . . . . . .+15V  
BOOT  
PHASE  
SOIC Package (Note 1) . . . . . . . . . . . .  
TSSOP Package (Note 1) . . . . . . . . . .  
QFN Package (Notes 2, 3). . . . . . . . . .  
65  
85  
33  
NA  
NA  
5
Input, Output or I/O Voltage. . . . . . . . . . . .GND -0.3V to V  
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 2  
+0.3V  
CC  
o
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . 150 C  
Maximum Storage Temperature Range . . . . . . . . . -65 C to 150 C  
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300 C  
o
o
Operating Conditions  
o
Supply Voltage, V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . +12V 10%  
CC  
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . . . 0 C to 70 C  
(Lead Tips Only)  
o
o
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTE:  
1. is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.  
JA  
2. is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See  
JA  
Tech Brief TB379.  
3. For , the “case temp” location is the center of the exposed metal pad on the package underside.  
JC  
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
V
SUPPLY CURRENT  
CC  
Nominal Supply  
I
UGATE and LGATE Open  
-
5
-
mA  
CC  
POWER-ON RESET  
Rising V  
Threshold  
Threshold  
V
V
= 4.5V  
-
8.2  
-
-
-
10.4  
V
V
V
CC  
OCSET  
OCSET  
Falling V  
= 4.5V  
-
-
CC  
Rising V  
Threshold  
1.26  
OCSET  
OSCILLATOR  
Free Running Frequency  
Total Variation  
185  
-15  
-
200  
-
215  
+15  
-
kHz  
%
RT = OPEN  
6k< RT to GND < 200k  
Ramp Amplitude  
V  
OSC  
RT = Open  
1.9  
V
P-P  
REFERENCE AND DAC  
DAC (VID0-VID4) Input Low Voltage  
DAC (VID0-VID4) Input High Voltage  
DACOUT Voltage Accuracy  
ERROR AMPLIFIER  
DC Gain  
-
-
-
-
0.8  
-
V
V
2.0  
-1.0  
+1.0  
%
-
-
-
88  
15  
6
-
-
-
dB  
Gain-Bandwidth Product  
Slew Rate  
GBW  
SR  
MHz  
V/s  
COMP = 10pF  
GATE DRIVERS  
Upper Gate Source  
Upper Gate Sink  
I
V
- V  
= 12V, V = 6V  
UGATE  
350  
500  
5.5  
450  
3.5  
-
10  
-
mA  
UGATE  
BOOT  
PHASE  
R
I
= 0.3A  
-
300  
-
UGATE  
LGATE  
Lower Gate Source  
Lower Gate Sink  
I
V
= 12V, V  
= 6V  
mA  
LGATE  
CC  
LGATE  
R
I
= 0.3A  
6.5  
LGATE  
LGATE  
PROTECTION  
Over-Voltage Trip (V  
/DACOUT)  
-
170  
60  
-
115  
200  
-
120  
%
µA  
mA  
µA  
SEN  
OCSET Current Source  
OVP Sourcing Current  
Soft Start Current  
I
V
V
= 4.5V  
230  
OCSET  
OCSET  
DC  
I
= 5.5V, V  
= 0V  
-
-
OVP  
SEN  
OVP  
I
10  
SS  
FN4567 Rev 3.00  
November 9, 2004  
Page 4 of 15  
HIP6004B  
HIP6004B  
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted (Continued)  
PARAMETER  
POWER GOOD  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Upper Threshold (V  
Lower Threshold (V  
/DACOUT)  
/DACOUT)  
V
V
Rising  
Falling  
106  
-
-
111  
%
%
%
V
SEN  
SEN  
SEN  
89  
-
94  
-
SEN  
Hysteresis (V  
/DACOUT)  
Upper and Lower Threshold  
2
SEN  
PGOOD Voltage Low  
V
I
= -5mA  
-
0.5  
-
PGOOD  
PGOOD  
Typical Performance Curves  
80  
70  
60  
50  
40  
C
= 3300pF  
GATE  
1000  
R
PULLUP  
TO +12V  
T
C
= C  
= C  
LOWER GATE  
UPPER  
100  
10  
C
= 1000pF  
GATE  
30  
20  
10  
0
R
PULLDOWN TO V  
SS  
T
C
= 10pF  
800  
GATE  
100 200  
300  
400  
500  
600  
700  
900 1000  
10  
100  
SWITCHING FREQUENCY (kHz)  
1000  
SWITCHING FREQUENCY (kHz)  
FIGURE 1. R RESISTANCE vs FREQUENCY  
FIGURE 2. BIAS SUPPLY CURRENT vs FREQUENCY  
T
the converter over-current (OC) trip point according to the  
following equation:  
Functional Pin Descriptions  
1
2
3
4
5
6
7
8
9
RT  
V
20  
19  
SEN  
I
x R  
OCSET  
OCSET  
I
= ----------------------------------------------------  
OCSET  
SS  
OVP  
PEAK  
r
DSON  
18 VCC  
VID0  
VID1  
VID2  
VID3  
VID4  
COMP  
17 LGATE  
16 PGND  
15 BOOT  
An over-current trip cycles the soft-start function.  
SS (Pin 3)  
Connect a capacitor from this pin to ground. This capacitor,  
along with an internal 10A current source, sets the soft-  
start interval of the converter.  
14  
UGATE  
13 PHASE  
12  
PGOOD  
VID0-4 (Pins 4-8)  
FB 10  
11 GND  
VID0-4 are the input pins to the 5-bit DAC. The states of  
these five pins program the internal voltage reference  
(DACOUT). The level of DACOUT sets the converter output  
voltage. It also sets the PGOOD and OVP thresholds. Table  
1 specifies DACOUT for the all combinations of DAC inputs.  
V
(Pin 1)  
SEN  
This pin is connected to the converters output voltage. The  
PGOOD and OVP comparator circuits use this signal to  
report output voltage status and for overvoltage protection.  
COMP (Pin 9) and FB (Pin 10)  
OCSET (Pin 2)  
COMP and FB are the available external pins of the error  
amplifier. The FB pin is the inverting input of the error  
amplifier and the COMP pin is the error amplifier output.  
These pins are used to compensate the voltage-control  
feedback loop of the converter.  
Connect a resistor (R  
upper MOSFET. R  
(I  
OCS  
) from this pin to the drain of the  
, an internal 200A current source  
OCSET  
OCSET  
), and the upper MOSFET on-resistance (r  
) set  
DS(ON)  
FN4567 Rev 3.00  
November 9, 2004  
Page 5 of 15  
HIP6004B  
HIP6004B  
GND (Pin 11)  
Functional Description  
Signal ground for the IC. All voltage levels are measured with  
respect to this pin.  
Initialization  
The HIP6004B automatically initializes upon receipt of power.  
Special sequencing of the input supplies is not necessary. The  
Power-On Reset (POR) function continually monitors the input  
supply voltages. The POR monitors the bias voltage at the V  
pin and the input voltage (V ) on the OCSET pin. The level on  
OCSET is equal to V less a fixed voltage drop (see over-current  
IN  
PGOOD (Pin 12)  
PGOOD is an open collector output used to indicate the status  
of the converter output voltage. This pin is pulled low when the  
converter output is not within 10%of the DACOUT reference  
voltage. Exception to this behavior is the ‘11111’ VID pin  
combination which disables the converter; in this case PGOOD  
asserts a high level.  
CC  
IN  
protection). The POR function initiates soft start operation after  
both input supply voltages exceed their POR thresholds. For  
operation with a single +12V power source, V and V are  
IN CC  
equivalent and the +12V power source must exceed the rising  
PHASE (Pin 13)  
Connect the PHASE pin to the upper MOSFET source. This  
pin is used to monitor the voltage drop across the MOSFET for  
over-current protection. This pin also provides the return path  
for the upper gate drive.  
V
threshold before POR initiates operation.  
CC  
Soft Start  
The POR function initiates the soft start sequence. An internal  
10µA current source charges an external capacitor (C ) on the  
SS pin to 4V. Soft start clamps the error amplifier output (COMP  
pin) and reference input (+ terminal of error amp) to the SS pin  
SS  
UGATE (Pin 14)  
Connect UGATE to the upper MOSFET gate. This pin provides  
the gate drive for the upper MOSFET.  
voltage. Figure 3 shows the soft start interval with C = 0.1µF.  
SS  
Initially the clamp on the error amplifier (COMP pin) controls the  
BOOT (Pin 15)  
converter’s output voltage. At t in Figure 3, the SS voltage  
1
This pin provides bias voltage to the upper MOSFET driver. A  
bootstrap circuit may be used to create a BOOT voltage  
suitable to drive a standard N-Channel MOSFET.  
reaches the valley of the oscillator’s triangle wave. The oscillator’s  
triangular waveform is compared to the ramping error amplifier  
voltage. This generates PHASE pulses of increasing width that  
charge the output capacitor(s). This interval of increasing pulse  
PGND (Pin 16)  
width continues to t . With sufficient output voltage, the clamp on  
2
This is the power ground connection. Tie the lower MOSFET  
source to this pin.  
the reference input controls the output voltage. This is the interval  
between t and t in Figure 3. At t the SS voltage exceeds the  
2
3
3
LGATE (Pin 17)  
DACOUT voltage and the output voltage is in regulation. This  
method provides a rapid and controlled output voltage rise. The  
Connect LGATE to the lower MOSFET gate. This pin provides  
the gate drive for the lower MOSFET.  
PGOOD signal toggles ‘high’ when the output voltage (V  
pin)  
SEN  
is within 5% of DACOUT. The 2% hysteresis built into the power  
good comparators prevents PGOOD oscillation due to nominal  
output voltage ripple.  
V
(Pin 18)  
CC  
Provide a 12V bias supply for the chip to this pin.  
OVP (Pin 19)  
The OVP pin can be used to drive an external SCR in the  
event of an overvoltage condition. Output rising 15% more  
than the DAC-set voltage triggers a high output on this pin  
and disables PWM gate drive circuitry.  
PGOOD  
(2V/DIV)  
0V  
RT (Pin 20)  
SOFT-START  
(1V/DIV)  
This pin provides oscillator switching frequency adjustment. By  
placing a resistor (R ) from this pin to GND, the nominal  
T
200kHz switching frequency is increased according to the  
following equation:  
OUTPUT  
VOLTAGE  
(1V/DIV)  
0V  
6
5 x 10  
Fs 200kHz + --------------------  
(R to GND)  
T
R k  
0V  
T
t
t
t
3
1
2
Conversely, connecting a pull-up resistor (R ) from this pin to  
T
TIME (5ms/DIV)  
V
reduces the switching frequency according to the  
CC  
following equation:  
FIGURE 3. SOFT START INTERVAL  
7
4 x 10  
Fs 200kHz --------------------  
(R to 12V)  
T
R k  
T
FN4567 Rev 3.00  
November 9, 2004  
Page 6 of 15  
HIP6004B  
HIP6004B  
where I  
is the internal OCSET current source (200A  
Over-Current Protection  
OCSET  
typical). The OC trip point varies mainly due to the  
MOSFET’s r variations. To avoid over-current  
The over-current function protects the converter from a  
shorted output by using the upper MOSFET’s on-resistance,  
DS(ON)  
tripping in the normal operating load range, find the R  
resistor from the equation above with:  
OCSET  
r
to monitor the current. This method enhances the  
DS(ON)  
converter’s efficiency and reduces cost by eliminating a  
current sensing resistor.  
1. The maximum r  
2. The minimum I  
at the highest junction temperature.  
DS(ON)  
from the specification table.  
OCSET  
3. Determine I  
for I  
I  
+ I  2 ,  
OUTMAX  
PEAK  
where I is the outputPinEdAuKctor ripple current.  
4V  
2V  
0V  
For an equation for the ripple current see the section under  
component guidelines titled ‘Output Inductor Selection’.  
A small ceramic capacitor should be placed in parallel with  
R
to smooth the voltage across R in the  
OCSET  
OCSET  
15A  
10A  
presence of switching noise on the input voltage.  
Output Voltage Program  
5A  
0A  
The output voltage of a HIP6004B converter is programmed  
to discrete levels between 1.8V  
and 3.5V . The voltage  
DC  
DC  
identification (VID) pins program an internal voltage reference  
(DACOUT) with a TTL-compatible 5-bit digital-to-analog  
converter (DAC). The level of DACOUT also sets the PGOOD  
and OVP thresholds. Table 1 specifies the DACOUT voltage  
for the 32 different combinations of connections on the VID  
pins. The output voltage should not be adjusted while the  
converter is delivering power. Remove input power before  
changing the output voltage. Adjusting the output voltage  
during operation could toggle the PGOOD signal and exercise  
the overvoltage protection.  
TIME (20ms/DIV)  
FIGURE 4. OVER-CURRENT OPERATION  
The over-current function cycles the soft-start function in a  
hiccup mode to provide fault protection. A resistor (R  
)
OCSET  
programs the over-current trip level. An internal 200µA current  
sink develops a voltage across R that is referenced to  
OCSET  
. When the voltage across the upper MOSFET (also  
V
IN  
referenced to V ) exceeds the voltage across R  
over-current function initiates a soft-start sequence. The soft-  
start function discharges C with a 10µA current sink and  
SS  
inhibits PWM operation. The soft-start function recharges  
, the  
IN OCSET  
‘11111’ VID pin combination resulting in a 0V output setting  
activates the Power-On Reset function and disables the gate  
drives circuitry. For this specific VID combination, though,  
PGOOD asserts a high level. This unusual behavior has been  
implemented in order to allow for operation in dual-  
C
, and PWM operation resumes with the error amplifier  
SS  
clamped to the SS voltage. Should an overload occur while  
recharging C , the soft start function inhibits PWM operation  
microprocessor systems where AND-ing of the PGOOD signals  
from two individual power converters is implemented.  
SS  
while fully charging C to 4V to complete its cycle. Figure 4  
SS  
shows this operation with an overload condition. Note that the  
Application Guidelines  
inductor current increases to over 15A during the C  
SS  
Layout Considerations  
charging interval and causes an over-current trip. The  
converter dissipates very little power with this method. The  
measured input power for the conditions of Figure 4 is 2.5W.  
As in any high frequency switching converter, layout is very  
important. Switching current from one power device to another  
can generate voltage transients across the impedances of the  
interconnecting bond wires and circuit traces. These  
interconnecting impedances should be minimized by using  
wide, short printed circuit traces. The critical components  
should be located as close together as possible, using ground  
plane construction or single point grounding.  
The over-current function will trip at a peak inductor current  
(I  
determined by:  
PEAK)  
I
x R  
OCSET  
OCSET  
I
= ----------------------------------------------------  
PEAK  
r
DSON  
FN4567 Rev 3.00  
November 9, 2004  
Page 7 of 15  
HIP6004B  
HIP6004B  
TABLE 1. OUTPUT VOLTAGE PROGRAM  
PIN NAME  
PIN NAME  
NOMINAL OUTPUT  
VOLTAGE DACOUT  
NOMINAL OUTPUT  
VOLTAGE DACOUT  
VID4  
0
VID3  
VID2  
1
VID1  
1
VID0  
1
VID4  
1
VID3  
1
VID2  
1
VID1  
1
VID0  
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1.30  
1.35  
1.40  
1.45  
1.50  
1.55  
1.60  
1.65  
1.70  
1.75  
1.80  
1.85  
1.90  
1.95  
2.00  
2.05  
0
0
1
1
0
1
1
1
1
0
2.1  
2.2  
2.3  
2.4  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
3.1  
3.2  
3.3  
3.4  
3.5  
0
1
0
1
1
1
1
0
1
0
1
0
0
1
1
1
0
0
0
0
1
1
1
1
0
1
1
0
0
1
0
1
1
0
1
0
0
0
0
1
1
1
0
0
1
0
0
0
0
1
1
0
0
0
0
1
1
1
1
0
1
1
1
0
1
1
0
1
0
1
1
0
0
1
0
1
1
0
1
0
1
0
1
0
0
1
0
1
0
0
0
0
1
1
1
0
0
1
1
0
0
1
0
1
0
0
1
0
0
0
0
1
1
0
0
0
1
0
0
0
0
1
0
0
0
0
NOTE: 0 = connected to GND or V , 1 = connected to V  
SS  
through pull-up resistors.  
DD  
the SS PIN and locate the capacitor, C close to the SS pin  
SS  
because the internal current source is only 10µA. Provide local  
V
IN  
HIP6004B  
V
decoupling between V  
and GND pins. Locate the  
CC  
CC  
as close as practical to the BOOT and  
capacitor, C  
BOOT  
PHASE pins.  
UGATE  
Q
Q
1
L
O
V
OUT  
PHASE  
+V  
IN  
BOOT  
C
D
1
C
Q
1
IN  
2
L
O
BOOT  
C
LGATE  
PGND  
O
D
2
V
OUT  
PHASE  
HIP6004B  
V
CC  
C
+12V  
SS  
Q
2
O
RETURN  
FIGURE 5. PRINTED CIRCUIT BOARD POWER AND  
GROUND PLANES OR ISLANDS  
C
VCC  
C
SS  
GND  
Figure 5 shows the critical power components of the converter. To  
minimize the voltage overshoot the interconnecting wires  
indicated by heavy lines should be part of ground or power plane  
in a printed circuit board. The components shown in Figure 5  
should be located as close together as possible. Please note that  
FIGURE 6. PRINTED CIRCUIT BOARD SMALL SIGNAL  
LAYOUT GUIDELINES  
Feedback Compensation  
the capacitors C and C each represent numerous physical  
IN  
O
Figure 7 highlights the voltage-mode control loop for a  
synchronous-rectified buck converter. The output voltage  
(V ) is regulated to the Reference voltage level. The error  
capacitors. Locate the HIP6004B within 3 inches of the  
MOSFETs, Q and Q . The circuit traces for the MOSFETs’ gate  
1
2
and source connections from the HIP6004B must be sized to  
OUT  
amplifier (Error Amp) output (V ) is compared with the  
handle up to 1A peak current.  
E/A  
oscillator (OSC) triangular wave to provide a pulse-width  
Figure 6 shows the circuit traces that require additional layout  
consideration. Use single point and ground plane construction  
for the circuits shown. Minimize any leakage current paths on  
modulated (PWM) wave with an amplitude of V at the  
IN  
PHASE node.  
FN4567 Rev 3.00  
November 9, 2004  
Page 8 of 15  
HIP6004B  
HIP6004B  
6. Check Gain against Error Amplifier’s Open-Loop Gain.  
V
DRIVER  
DRIVER  
IN  
OSC  
7. Estimate Phase Margin - Repeat if Necessary.  
PWM  
L
O
COMPARATOR  
V
OUT  
Compensation Break Frequency Equations  
-
PHASE  
+
C
1
1
V  
OSC  
O
F
= ------------------------------------  
2x R x C  
F
= --------------------------------------------------------  
Z1  
P1  
C
x C  
2
1
1
2
2x R  
x
---------------------  
ESR  
(PARASITIC)  
2
C
+ C  
1
2
Z
FB  
1
1
F
= ------------------------------------------------------  
2x R + R x C  
F
= ------------------------------------  
2x R x C  
V
E/A  
Z2  
P2  
1
3
3
3
3
Z
-
IN  
+
Figure 8 shows an asymptotic plot of the DC-DC converter’s  
gain vs frequency. The actual Modulator Gain has a high gain  
peak due to the high Q factor of the output filter and is not  
shown in Figure 8. Using the above guidelines should give a  
Compensation Gain similar to the curve plotted. The open  
loop error amplifier gain bounds the compensation gain.  
REFERENCE  
ERROR  
AMP  
DETAILED COMPENSATION COMPONENTS  
Z
FB  
V
OUT  
C
2
Z
IN  
C
C
R
R
Check the compensation gain at F with the capabilities of  
3
1
3
2
P2  
the error amplifier. The Closed Loop Gain is constructed on  
the log-log graph of Figure 8 by adding the Modulator Gain (in  
dB) to the Compensation Gain (in dB). This is equivalent to  
multiplying the modulator transfer function to the  
R
1
COMP  
FB  
-
+
compensation transfer function and plotting the gain.  
HIP6004B  
DACOUT  
The compensation gain uses external impedance networks  
Z
and Z to provide a stable, high bandwidth (BW)  
FB  
IN  
FIGURE 7. VOLTAGE-MODE BUCK CONVERTER  
COMPENSATION DESIGN  
overall loop. A stable control loop has a gain crossing with  
-20dB/decade slope and a phase margin greater than 45  
degrees. Include worst case component variations when  
determining phase margin.  
The PWM wave is smoothed by the output filter (L and C ).  
O
O
The modulator transfer function is the small-signal transfer  
function of V /V . This function is dominated by a DC  
100  
OUT E/A  
Gain and the output filter (L and C ), with a double pole  
F
F
P1  
F
F
Z2  
Z1  
P2  
O
O
80  
60  
40  
20  
0
break frequency at F and a zero at F  
. The DC Gain of  
LC ESR  
OPEN LOOP  
ERROR AMP GAIN  
the modulator is simply the input voltage (V ) divided by the  
IN  
peak-to-peak oscillator voltage V  
OSC  
.
20LOG  
(R /R )  
Modulator Break Frequency Equations  
2
1
20LOG  
(V /V  
)
IN OSC  
1
1
F
= ------------------------------------------  
F
= -------------------------------------------  
MODULATOR  
GAIN  
LC  
ESR  
2x ESR x C  
2x  
L
x C  
COMPENSATION  
GAIN  
O
O
O
-20  
-40  
-60  
CLOSED LOOP  
GAIN  
The compensation network consists of the error amplifier  
(internal to the HIP6004B) and the impedance networks Z  
F
LC  
F
IN  
ESR  
100K  
FREQUENCY (Hz)  
and Z . The goal of the compensation network is to provide  
FB  
10  
100  
1K  
10K  
1M  
10M  
a closed loop transfer function with the highest 0dB crossing  
frequency (f  
) and adequate phase margin. Phase margin  
is the difference between the closed loop phase at f and  
0dB  
FIGURE 8. ASYMPTOTIC BODE PLOT OF CONVERTER GAIN  
0dB  
180degreesThe equations below relate the compensation  
network’s poles, zeros and gain to the components (R , R ,  
Component Selection Guidelines  
1
2
R , C , C , and C ) in Figure 7. Use these guidelines for  
locating the poles and zeros of the compensation network:  
3
1
2
3
Output Capacitor Selection  
An output capacitor is required to filter the output and supply  
the load transient current. The filtering requirements are a  
function of the switching frequency and the ripple current.  
The load transient requirements are a function of the slew  
rate (di/dt) and the magnitude of the transient load current.  
These requirements are generally met with a mix of  
capacitors and careful layout.  
1. Pick Gain (R /R ) for desired converter bandwidth.  
2
1
ST  
2. Place 1 Zero Below Filter’s Double Pole (~75% F ).  
LC  
ND  
3. Place 2  
Zero at Filter’s Double Pole.  
ST  
4. Place 1 Pole at the ESR Zero.  
ND  
5. Place 2  
Pole at Half the Switching Frequency.  
FN4567 Rev 3.00  
November 9, 2004  
Page 9 of 15  
HIP6004B  
HIP6004B  
Modern microprocessors produce transient load rates above  
1A/ns. High frequency capacitors initially supply the transient  
and slow the current load rate seen by the bulk capacitors. The  
bulk filter capacitor values are generally determined by the ESR  
(Effective Series Resistance) and voltage rating requirements  
rather than actual capacitance requirements.  
The response time to a transient is different for the application  
of load and the removal of load. The following equations give  
the approximate response time interval for application and  
removal of a transient load:  
L x I  
L x I  
TRAN  
OUT  
TRAN  
V
OUT  
t
=
t
=
FALL  
RISE  
V
- V  
IN  
High frequency decoupling capacitors should be placed as  
close to the power pins of the load as physically possible. Be  
careful not to add inductance in the circuit board wiring that  
could cancel the usefulness of these low inductance  
components. Consult with the manufacturer of the load on  
specific decoupling requirements. For example, Intel  
recommends that the high frequency decoupling for the  
Pentium Pro be composed of at least forty (40) 1µF ceramic  
capacitors in the 1206 surface-mount package.  
where: I  
is the transient load current step, t  
is the  
is the  
TRAN  
RISE  
response time to the application of load, and t  
FALL  
response time to the removal of load. With a +5V input source,  
the worst case response time can be either at the application  
or removal of load and dependent upon the DACOUT setting.  
Be sure to check both of these equations at the minimum and  
maximum output levels for the worst case response time. With  
a +12V input, and output voltage level equal to DACOUT,  
t
is the longest response time.  
FALL  
Use only specialized low-ESR capacitors intended for switching-  
regulator applications for the bulk capacitors. The bulk  
capacitor’s ESR will determine the output ripple voltage and the  
initial voltage drop after a high slew-rate transient. An aluminum  
electrolytic capacitor’s ESR value is related to the case size with  
lower ESR available in larger case sizes. However, the  
Equivalent Series Inductance (ESL) of these capacitors  
increases with case size and can reduce the usefulness of the  
capacitor to high slew-rate transient loading. Unfortunately, ESL  
is not a specified parameter. Work with your capacitor supplier  
and measure the capacitor’s impedance with frequency to select  
a suitable component. In most cases, multiple electrolytic  
capacitors of small case size perform better than a single large  
case capacitor.  
Input Capacitor Selection  
Use a mix of input bypass capacitors to control the voltage  
overshoot across the MOSFETs. Use small ceramic capacitors  
for high frequency decoupling and bulk capacitors to supply the  
current needed each time Q turns on. Place the small ceramic  
capacitors physically close to the MOSFETs and between the  
1
drain of Q and the source of Q .  
1
2
The important parameters for the bulk input capacitor are the  
voltage rating and the RMS current rating. For reliable  
operation, select the bulk capacitor with voltage and current  
ratings above the maximum input voltage and largest RMS  
current required by the circuit. The capacitor voltage rating  
should be at least 1.25 times greater than the maximum input  
voltage and a voltage rating of 1.5 times is a conservative  
guideline. The RMS current rating requirement for the input  
capacitor of a buck regulator is approximately 1/2 the DC load  
current.  
Output Inductor Selection  
The output inductor is selected to meet the output voltage  
ripple requirements and minimize the converter’s response  
time to the load transient. The inductor value determines the  
converter’s ripple current and the ripple voltage is a function of  
the ripple current. The ripple voltage and current are  
approximated by the following equations:  
For a through hole design, several electrolytic capacitors  
(Panasonic HFQ series or Nichicon PL series or Sanyo MV-GX or  
equivalent) may be needed. For surface mount designs, solid  
tantalum capacitors can be used, but caution must be exercised  
with regard to the capacitor surge current rating. These capacitors  
must be capable of handling the surge-current at power-up. The  
TPS series available from AVX, and the 593D series from  
Sprague are both surge current tested.  
V
- V  
V
OUT  
IN  
OUT  
DV  
= DI x ESR  
DI =  
x
OUT  
Fs x L  
V
IN  
Increasing the value of inductance reduces the ripple current  
and voltage. However, the large inductance values reduce the  
converter’s response time to a load transient.  
MOSFET Selection/Considerations  
One of the parameters limiting the converter’s response to a  
load transient is the time required to change the inductor  
current. Given a sufficiently fast control loop design, the  
HIP6004B will provide either 0% or 100% duty cycle in  
response to a load transient. The response time is the time  
required to slew the inductor current from an initial current  
value to the transient current level. During this interval the  
difference between the inductor current and the transient  
current level must be supplied by the output capacitor.  
Minimizing the response time can minimize the output  
capacitance required.  
The HIP6004B requires 2 N-Channel power MOSFETs. These  
should be selected based upon r  
, gate supply  
DS(ON)  
requirements, and thermal management requirements.  
In high-current applications, the MOSFET power dissipation,  
package selection and heatsink are the dominant design factors.  
The power dissipation includes two loss components; conduction  
loss and switching loss. The conduction losses are the largest  
component of power dissipation for both the upper and the lower  
MOSFETs. These losses are distributed between the two  
MOSFETs according to duty factor (see the equations below).  
FN4567 Rev 3.00  
November 9, 2004  
Page 10 of 15  
HIP6004B  
HIP6004B  
Only the upper MOSFET has switching losses, since the  
Schottky rectifier clamps the switching node before the  
synchronous rectifier turns on. These equations assume linear  
voltage-current transitions and do not adequately model power  
loss due the reverse-recovery of the lower MOSFET’s body  
diode. The gate-charge losses are dissipated by the HIP6004B  
and don't heat the MOSFETs. However, large gate-charge  
Figure 10 shows the upper gate drive supplied by a direct  
connection to V . This option should only be used in  
CC  
converter systems where the main input voltage is +5V  
or  
DC  
less. The peak upper gate-to-source voltage is approximately  
V
less the input supply. For +5V main power and +12V  
CC  
DC  
for the bias, the gate-to-source voltage of Q is 7V. A logic-  
1
level MOSFET is a good choice for Q and a logic-level  
1
increases the switching interval, t  
which increases the upper  
MOSFET can be used for Q if its absolute gate-to-source  
SW  
2
MOSFET switching losses. Ensure that both MOSFETs are  
within their maximum junction temperature at high ambient  
temperature by calculating the temperature rise according to  
package thermal-resistance specifications. A separate heatsink  
may be necessary depending upon MOSFET power, package  
type, ambient temperature and air flow.  
voltage rating exceeds the maximum voltage applied to V  
.
CC  
+12V  
+5V OR LESS  
V
CC  
1
2
2
BOOT  
P
= Io x r  
x D +  
Io x V x t x F  
IN SW S  
UPPER  
LOWER  
DS(ON)  
DS(ON)  
HIP6004B  
2
P
= Io x r  
x (1 - D)  
Q
Q
1
UGATE  
PHASE  
Where: D is the duty cycle = V  
/ V ,  
IN  
OUT  
NOTE:  
G-S V -5V  
t
is the switch ON time, and  
SW  
V
CC  
F
is the switching frequency.  
S
D
2
LGATE  
PGND  
2
-
+
Standard-gate MOSFETs are normally recommended for  
use with the HIP6004B. However, logic-level gate MOSFETs  
can be used under special circumstances. The input voltage,  
upper gate drive level, and the MOSFET’s absolute gate-to-  
source voltage rating determine whether logic-level  
MOSFETs are appropriate.  
NOTE:  
V
G-S V  
CC  
GND  
FIGURE 10. UPPER GATE DRIVE - DIRECT V  
DRIVE OPTION  
CC  
Schottky Selection  
Figure 9 shows the upper gate drive (BOOT pin) supplied by a  
bootstrap circuit from V . The boot capacitor, C  
Rectifier D is a clamp that catches the negative inductor  
2
CC  
BOOT  
swing during the dead time between turning off the lower  
MOSFET and turning on the upper MOSFET. The diode  
must be a Schottky type to prevent the lossy parasitic  
MOSFET body diode from conducting. It is acceptable to  
omit the diode and let the body diode of the lower MOSFET  
clamp the negative inductor swing, but efficiency will drop  
one or two percent as a result. The diode’s rated reverse  
breakdown voltage must be greater than the maximum  
input voltage.  
develops a floating supply voltage referenced to the PHASE  
pin. This supply is refreshed each cycle to a voltage of V  
CC  
less the boot diode drop (V ) when the lower MOSFET, Q  
D
2
turns on. Logic-level MOSFETs can only be used if the  
MOSFET’s absolute gate-to-source voltage rating exceeds  
the maximum voltage applied to V  
.
CC  
+12V  
D
BOOT  
+5V OR +12V  
+ V  
-
D
V
CC  
BOOT  
HIP6004B  
C
BOOT  
Q1  
UGATE  
PHASE  
NOTE:  
G-S V -V  
V
CC  
D
Q2  
D2  
LGATE  
PGND  
-
+
NOTE:  
G-S V  
V
CC  
GND  
FIGURE 9. UPPER GATE DRIVE - BOOTSTRAP OPTION  
FN4567 Rev 3.00  
November 9, 2004  
Page 11 of 15  
HIP6004B  
HIP6004B  
HIP6004B DC-DC Converter Application Circuit  
Figure 11 shows an application circuit of a DC-DC Converter  
for an Intel Pentium Pro microprocessor. Detailed information  
on the circuit, including a complete  
Application Note AN9672. Although the Application Note  
details the HIP6004, the same evaluation platform can be used  
to evaluate the HIP6004B.  
Bill-of-Materials and circuit board description, can be found in  
L
- 1µHµ  
+5V  
OR  
+12V  
2x 1µF  
1
F
2N6394  
C
1
IN  
V
=
IN  
5x 1000µF  
+12V  
2K  
D
1
0.1µF  
1000pF  
1K  
OVP  
19  
V
CC  
18  
2
12  
15  
OCSET  
PGOOD  
MONITOR  
AND  
PROTECTION  
SS  
3
BOOT  
1
V
0.1µF  
SEN  
RT  
20  
0.1µF  
OSC  
14  
13  
UGATE  
PHASE  
Q
Q
L
3µH  
1
2
4
5
6
7
8
VID0  
VID1  
VID2  
VID3  
VID4  
HIP6004B  
+V  
O
D/A  
D
2
17 LGATE  
16 PGND  
C
-
2
OUT  
+
+
-
9x 1000µF  
FB  
10  
9
11  
COMP  
GND  
2.2nF  
8.2nF  
20K  
0.1µF  
15  
1.33K  
Component Selection Notes:  
C
Each 1000µF 6.3W VDC, Sanyo MV-GX or Equivalent.  
OUT -  
Each 330µF 25W VDC, Sanyo MV-GX or Equivalent.  
C
IN -  
L - Core: Micrometals T50-52B; Each Winding: 10 Turns of 16AWG.  
2
L
D
D
- Core: Micrometals T50-52; Winding: 5 Turns of 18AWG.  
- 1N4148 or Equivalent.  
- 3A, 40V Schottky, Motorola MBR340 or Equivalent.  
1
1
2
Q , Q - Intersil MOSFET; RFP70N03.  
1
2
FIGURE 11. PENTIUM PRO DC-DC CONVERTER  
FN4567 Rev 3.00  
November 9, 2004  
Page 12 of 15  
HIP6004B  
HIP6004B  
Small Outline Plastic Packages (SOIC)  
M20.3 (JEDEC MS-013-AC ISSUE C)  
20 LEAD WIDE BODY SMALL OUTLINE PLASTIC PACKAGE  
N
INCHES MILLIMETERS  
INDEX  
M
M
B
0.25(0.010)  
H
AREA  
SYMBOL  
MIN  
MAX  
MIN  
2.35  
0.10  
0.35  
0.23  
MAX  
2.65  
NOTES  
E
A
A1  
B
C
D
E
e
0.0926  
0.0040  
0.014  
0.1043  
0.0118  
0.019  
-
-B-  
0.30  
-
0.49  
9
1
2
3
L
0.0091  
0.4961  
0.2914  
0.0125  
0.32  
-
SEATING PLANE  
A
0.5118 12.60  
13.00  
7.60  
3
-A-  
0.2992  
7.40  
4
o
D
h x 45  
0.050 BSC  
1.27 BSC  
-
-C-  
H
h
0.394  
0.010  
0.016  
0.419  
0.029  
0.050  
10.00  
0.25  
0.40  
10.65  
0.75  
1.27  
-
µ
5
e
A1  
C
L
6
B
0.10(0.004)  
N
20  
20  
7
M
M
S
B
0.25(0.010)  
C
A
o
o
o
o
0
8
0
8
-
Rev. 1 1/02  
NOTES:  
1. Symbols are defined in the “MO Series Symbol List” in Section  
2.2 of Publication Number 95.  
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
3. Dimension “D” does not include mold flash, protrusions or gate  
burrs. Mold flash, protrusion and gate burrs shall not exceed  
0.15mm (0.006 inch) per side.  
4. Dimension “E” does not include interlead flash or protrusions. In-  
terlead flash and protrusions shall not exceed 0.25mm (0.010  
inch) per side.  
5. The chamfer on the body is optional. If it is not present, a visual  
index feature must be located within the crosshatched area.  
6. “L” is the length of terminal for soldering to a substrate.  
7. “N” is the number of terminal positions.  
8. Terminal numbers are shown for reference only.  
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater  
above the seating plane, shall not exceed a maximum value of  
0.61mm (0.024 inch)  
10. Controlling dimension: MILLIMETER. Converted inch dimen-  
sions are not necessarily exact.  
FN4567 Rev 3.00  
November 9, 2004  
Page 13 of 15  
HIP6004B  
HIP6004B  
Thin Shrink Small Outline Plastic Packages (TSSOP)  
N
M20.173  
INDEX  
AREA  
0.25(0.010)  
M
B M  
E
20 LEAD THIN SHRINK SMALL OUTLINE PLASTIC  
PACKAGE  
E1  
-B-  
GAUGE  
PLANE  
INCHES  
MIN  
MILLIMETERS  
SYMBOL  
MAX  
0.047  
0.006  
0.051  
0.0118  
0.0079  
0.260  
0.177  
MIN  
-
MAX  
1.20  
0.15  
1.05  
0.30  
0.20  
6.60  
4.50  
NOTES  
1
2
3
A
A1  
A2  
b
-
-
L
0.002  
0.031  
0.0075  
0.0035  
0.252  
0.169  
0.05  
0.80  
0.19  
0.09  
6.40  
4.30  
-
0.25  
0.010  
0.05(0.002)  
SEATING PLANE  
A
-
-A-  
D
9
c
-
-C-  
D
3
A2  
e
A1  
E1  
e
4
c
b
0.10(0.004)  
0.026 BSC  
0.65 BSC  
-
0.10(0.004) M  
C
A M B S  
E
0.246  
0.256  
6.25  
0.45  
6.50  
0.75  
-
L
0.0177  
0.0295  
6
NOTES:  
N
20  
20  
7
1. These package dimensions are within allowable dimensions of  
JEDEC MO-153-AC, Issue E.  
o
o
o
o
0
8
0
8
-
Rev. 1 6/98  
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
3. Dimension “D” does not include mold flash, protrusions or gate burrs.  
Mold flash, protrusion and gate burrs shall not exceed 0.15mm  
(0.006 inch) per side.  
4. Dimension “E1” does not include interlead flash or protrusions. Inter-  
lead flash and protrusions shall not exceed 0.15mm (0.006 inch) per  
side.  
5. The chamfer on the body is optional. If it is not present, a visual index  
feature must be located within the crosshatched area.  
6. “L” is the length of terminal for soldering to a substrate.  
7. “N” is the number of terminal positions.  
8. Terminal numbers are shown for reference only.  
9. Dimension “b” does not include dambar protrusion. Allowable dambar  
protrusion shall be 0.08mm (0.003 inch) total in excess of “b” dimen-  
sion at maximum material condition. Minimum space between protru-  
sion and adjacent lead is 0.07mm (0.0027 inch).  
10. Controlling dimension: MILLIMETER. Converted inch dimensions  
are not necessarily exact. (Angles in degrees)  
© Copyright Intersil Americas LLC 1999-2004. All Rights Reserved.  
All trademarks and registered trademarks are the property of their respective owners.  
For additional products, see www.intersil.com/en/products.html  
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted  
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html  
Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such  
modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are  
current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its  
subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or  
otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN4567 Rev 3.00  
November 9, 2004  
Page 14 of 15  
HIP6004B  
HIP6004B  
Quad Flat No-Lead Plastic Package (QFN)  
Micro Lead Frame Plastic Package (MLFP)  
L20.5x5  
20 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE  
(COMPLIANT TO JEDEC MO-220VHHC ISSUE C)  
MILLIMETERS  
SYMBOL  
MIN  
NOMINAL  
MAX  
1.00  
0.05  
1.00  
NOTES  
A
A1  
A2  
A3  
b
0.80  
0.90  
-
-
-
-
-
-
9
0.20 REF  
9
0.23  
2.95  
2.95  
0.28  
0.38  
3.25  
3.25  
5, 8  
D
5.00 BSC  
-
D1  
D2  
E
4.75 BSC  
9
3.10  
7, 8  
5.00 BSC  
-
E1  
E2  
e
4.75 BSC  
9
3.10  
7, 8  
0.65 BSC  
-
k
0.25  
0.35  
-
-
-
-
L
0.60  
0.75  
0.15  
8
L1  
N
-
20  
5
5
-
10  
2
Nd  
Ne  
P
3
3
-
-
0.60  
12  
9
-
9
Rev. 3 10/02  
NOTES:  
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.  
2. N is the number of terminals.  
3. Nd and Ne refer to the number of terminals on each D and E.  
4. All dimensions are in millimeters. Angles are in degrees.  
5. Dimension b applies to the metallized terminal and is measured  
between 0.15mm and 0.30mm from the terminal tip.  
6. The configuration of the pin #1 identifier is optional, but must be  
located within the zone indicated. The pin #1 identifier may be  
either a mold or mark feature.  
7. Dimensions D2 and E2 are for the exposed pads which provide  
improved electrical and thermal performance.  
8. Nominal dimensionsare provided toassistwith PCBLandPattern  
Design efforts, see Intersil Technical Brief TB389.  
9. Features and dimensions A2, A3, D1, E1, P & are present when  
Anvil singulation method is used and not present for saw  
singulation.  
10. Depending on the method of lead termination at the edge of the  
package, a maximum 0.15mm pull back (L1) maybe present. L  
minus L1 to be equal to or greater than 0.3mm.  
FN4567 Rev 3.00  
November 9, 2004  
Page 15 of 15  

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