HSB276S [RENESAS]

Silicon Schottky Barrier Diode for Detector and Mixer; 硅肖特基二极管检测器和混频器
HSB276S
型号: HSB276S
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Silicon Schottky Barrier Diode for Detector and Mixer
硅肖特基二极管检测器和混频器

肖特基二极管 微波混频二极管 光电二极管
文件: 总5页 (文件大小:64K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HSB276S  
Silicon Schottky Barrier Diode for Detector and Mixer  
REJ03G0133-0100Z  
(Previous: ADE-208-780)  
Rev.1.00  
Nov.10.2003  
Features  
High forward current, Low capacitance.  
HSB276S which is interconnected in series configuration is designed for balanced mixer use.  
CMPAK package is suitable for high density surface mounting and high speed assembly.  
Ordering Information  
Type No.  
Laser Mark  
Package Code  
HSB276S  
C2  
CMPAK  
Pin Arrangement  
3
1. Cathode 2  
2. Anode 1  
3. Cathode 1  
Anode 2  
2
1
(Top View)  
Rev.1.00, Nov.10.2003, page 1 of 4  
HSB276S  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Value  
Unit  
V
Reverse voltage  
VR  
3
*1  
Average rectified current  
Junction temperature  
Storage temperature  
Note: 1. Per one device  
IO  
30  
mA  
°C  
Tj  
125  
Tstg  
–55 to +125  
°C  
Electrical Characteristics *  
(Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
V
Test Condition  
IR = 1 mA  
Reverse voltage  
Reverse current  
Forward current  
Capacitance  
VR  
IR  
3
35  
30  
50  
µA  
mA  
pF  
pF  
V
VR = 0.5 V  
IF  
VF = 0.5 V  
C
0.9  
0.1  
VR = 0.5 V, f = 1 MHz  
VR = 0.5 V, f = 1 MHz  
Capacitance deviation  
ESD-Capability *2  
C  
C = 200 pF, R = 0 , Both forward and  
reverse direction 1 pulse.  
Note: 1. Per one device  
2. Failure criterion ; IR 100 µA at VR = 0.5 V  
Rev.1.00, Nov.10.2003, page 2 of 4  
HSB276S  
Main Characteristics  
10–1  
10–2  
10–3  
10–4  
10–5  
10–2  
10–3  
10–4  
10–5  
10–6  
0
0.2  
Forward voltage VF (V)  
Fig.1 Forward current vs. Forward voltage  
0.4  
0.6  
0.8  
1.0  
0
1.0  
Reverse voltage VR (V)  
Fig.2 Reverse current vs. Reverse voltage  
2.0  
3.0  
4.0  
5.0  
f=1MHz  
10  
1.0  
0.1  
0.1  
1.0  
10  
Reverse voltage VR (V)  
Fig.3 Capacitance vs. Reverse voltage  
Rev.1.00, Nov.10.2003, page 3 of 4  
HSB276S  
Package Dimensions  
As of January, 2003  
Unit: mm  
2.0 ± 0.2  
+ 0.1  
+ 0.1  
0.16  
0.3  
0.3  
– 0.06  
– 0.05  
0 – 0.1  
+ 0.1  
– 0.05  
+ 0.1  
– 0.05  
0.3  
(0.65) (0.65)  
1.3 ± 0.2  
Package Code  
JEDEC  
CMPAK  
JEITA  
Mass (reference value)  
Conforms  
0.006 g  
Rev.1.00, Nov.10.2003, page 4 of 4  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
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