HVL142AM [RENESAS]
Silicon Epitaxial Planar Pin Diode for Antenna Switching; 硅外延平面PIN二极管的天线切换
| 型号： | HVL142AM |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon Epitaxial Planar Pin Diode for Antenna Switching |
| 文件： | 总6页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HVL142AM
Silicon Epitaxial Planar Pin Diode for Antenna Switching
REJ03G0198-0200
Rev.2.00
Jan 19, 2006
Features
•
•
•
•
An optimal solution for antenna switching in mobile phones.
Low capacitance. (C = 0.35 pF max)
Low forward resistance. (rf = 1.3 Ω max)
Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Name
Package Code
HVL142AM
J
TEFP
PUSF0002ZA-A
Pin Arrangement
Cathode mark
Mark
•
1
2
1. Cathode
2. Anode
Rev.2.00 Jan 19, 2006 page 1 of 5
HVL142AM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
30
Unit
Reverse voltage
VR
IF
V
Forward current
100
mA
mW
°C
Power dissipation
Junction temperature
Storage temperature
Pd
Tj
100
125
Tstg
−55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
—
Typ
Max
100
1.0
Unit
nA
V
Test Condition
VR = 30 V
Reverse current
Forward voltage
Capacitance
IR
VF
C
—
—
—
—
—
—
IF = 10 mA
—
0.35
1.3
pF
Ω
VR = 1 V, f = 1 MHz
IF = 10 mA, f = 100 MHz
Forward resistance
ESD-Capability *1
rf
—
—
100
—
V
C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V
2. For TEFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip
part is considered as unquestioned. Please kindly consider soldering nature.
Rev.2.00 Jan 19, 2006 page 2 of 5
HVL142AM
Main Characteristic
10−2
10−7
10−8
10−4
10−9
10−6
10−10
10−11
10−12
10−13
10−8
10−10
10−12
0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Fig.2 Reverse current vs. Reverse voltage
103
f = 1MHz
f = 100MHz
102
10
101
1.0
100
0.1
0.1
10−1
1.0
10
10−4
10−3
Forward current IF (A)
Fig.4 Forward resistance vs. Forward current
10−2
10−1
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Rev.2.00 Jan 19, 2006 page 3 of 5
HVL142AM
106
105
104
103
102
101
100
10−1
f = 100MHz
0
0.2
0.4
0.6
0.8
Forward voltage VF (V)
Fig.5 Forward resistance (parallel) vs. Forward voltage
Rev.2.00 Jan 19, 2006 page 4 of 5
HVL142AM
Package Dimensions
Package Name
TEFP
JEITA Package Code
RENESAS Code
PUSF0002ZA-A
Previous Code
TEFP / TEFPV
MASS[Typ.]
0.0006g
D
b
E
H
E
c
e
1
φb
Dimension in Millimeters
Reference
Symbol
A
Min
-
Nom
-
Max
0.40
0.35
0.18
0.65
0.90
1.05
-
A
b
0.25
0.08
0.55
0.75
0.95
-
0.30
0.13
0.60
0.80
1.00
0.40
1.00
c
D
E
HE
φb
e1
Pattern of terminal position areas
-
-
Rev.2.00 Jan 19, 2006 page 5 of 5
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