MBN600C20 [RENESAS]

600A, 2000V, N-CHANNEL IGBT;


型号：	MBN600C20
厂家：	RENESAS TECHNOLOGY CORP
描述：	600A, 2000V, N-CHANNEL IGBT 局域网双极性晶体管功率控制
文件：	总4页 (文件大小：62K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IGBT MODULE

MBN600C20

Silicon N-channel IGBT

OUTLINE DRAWING

Unit in mm

FEATURES

2-M8

2-M4

High thermal fatigue durability.

(delta Tc=70 C,N 20,000cycles)

low noise due to built-in free-wheeling

diode - ultra soft fast recovery diode(USFD).

High speed,low loss IGBT module.

Low driving power due to low input

capacitance MOS gate.

4-φ5.8

High reliability,high durability module.

Isolated head sink (terminal to base).

TERMINALS

Weight: 720 (g)

°C

ABSOLUTE MAXIMUM RATINGS (Tc=25

)

Item

Symbol

V_CES

Unit

MBN600C20

Collector Emitter Voltage

Gate Emitter Voltage

Collector Current

2,000

V_GES

I_C

I_Cp

I_F

I_FM

T_j

T_stg

V_ISO

±20

600

1,200

600

1,200

4,000

1ms

Forward Current

1ms

Collector Power Dissipation

Junction Temperature

Storage Temperature

Isolation Voltage

°C

-40 ~ +125

4,000(AC 1 minute)

2/10

V_RMS

(M4/M8)

Screw Torque

Terminals

(1)

(2)

N.m

(M5)

Mounting

2.8

Notes: (1)Recommended Value 1.8±0.2/9±1N.m

(2)Recommended Value 2.6±0.2N.m

°C

CHARACTERISTICS (Tc=25

)

Item

Symbol Unit

Min. Typ. Max.

Test Conditions

Collector Emitter Cut-Off Current

I _CES

4.0 V_CE=2,000V,V_GE=0V

Gate Emitter Leakage Current

I_GES

±200 V_GE=±20V,V_CE=0V

5.4 I_C=600A,V_GE=15V

7.0 V_CE=10V, I_C=600mA

100 V_CE=10V,V_GE=0V,f=100KHz

2.1 V_CC=1,000V,Ic=600A

2.5 L=150nH

Collector Emitter Saturation Voltage

Gate Emitter Threshold Voltage

Input Capacitance

V_CE(sat)

V_GE(TO)

C_ies

t_r

t_on

4.4

5.2

1.3

1.6

2.0

4.0

Rise Time

Turn On Time

Switching Times

Fall Time

t_f

2.7 R_G=8.2W

(3)

Turn Off Time

Peak Forward Voltage Drop

t_off

V_FM

4.0

2.2

5.9 V_GE=±15V Tc=125°C

3.2 -Ic=600A,V_GE=0V

Reverse Recovery Time

t_rr

0.5

0.9 Vcc=1,000V,-Ic=600A,L=150nH,

Tc=125°C (4)

Thermal Impedance

IGBT

FWD

Rth(j-c)

°C/W

0.025

0.05

Junction to case

Notes:(3) R_Gvalue is the test condition’s value for decision of the switching times, not recommended value.

Determine the suitable R_Gvalue after the measurement of switching waveforms

(overshoot voltage,etc.)with appliance mounted.

(4) Counter arm IGBT

V_GE=-15V

PDE-N600C20-0

TYPICAL

1600

Tc=125°C

Tc=25°C

VGE=15V

1400

1200

1000

800

600

400

200

1400

1200

1000

800

600

400

200

14V

VGE=15V

13V

12V

11V

14V

13V

12V

11V

10V

Collector to Emitter Voltage, V^CE(V)

Collector current vs. Collector to Emitter voltage

Collector to Emitter Voltage, VCE (V)

Collector current vs. Collector to Emitter voltage

TYPICAL

1000

1600

[Conditions]

V^GE=0

VGE=0

Tc=25°C

f=100KHz

Tc=25°C

Tc=125°C

1400

1200

100

Cies

1000

800

600

400

200

Coes

Cres

0.1

0.7

100

0.1

Forward Voltage, V^F(V)

Collector to Emitter Voltage, VCE (V)

Forward voltage of free-wheeling diode

Capacitance vs. Collector to Emitter Voltage

TYPICAL

[Conditions]

Tc=125°C

[Conditions]

V^CE

Tc=125°C

V^CC=1000V

Lp≈150nH

VCC=1000V

Lp≈150nH

0.6

0.5

0.4

0.3

0.2

0.1

10%

V^GE

RG(on)=8.2Ω

RG(off)=8.2Ω

VGE=±15V

RG(on)=8.2Ω

RG(off)=8.2Ω

VGE=±15V

t1t3

t4 t2

Eon(10%)=

IC VCE dt

Inductive Load

Eon(full)=

Inductive Load

I^CVCE dt

td(off)

full

10%

trr

td(on)

100

200

300 400

500 600

700

100 200

300

400

500 600 700

Collector Current, IC(A)

Collector Current IC (A)

Switching time vs. Collector current

Turn-on Loss vs. Collector Current

PDE-N600C20-0

TYPICAL

0.7

0.6

0.5

0.4

0.3

0.7

0.6

[Conditions]

Tc=125°C

V^CC=1000V

Lp≈150nH

full

V^CE

0.1 IRM

I^RM

10%

RG(on)=8.2Ω

RG(off)=8.2Ω

V^GE=±15V

t9 t11 t12 t10

t12

IC VCE dt

t11

t10

Err(10%)=

Err(full)=

0.5

0.4

0.3

0.2

0.1

Inductive Load

I^CVCE dt

full

10%

[Conditions]

Tc=125°C

VCC=1000V

Lp≈150nH

V^CE

0.2

0.1

10%

V^GE

RG(on)=8.2Ω

RG(off)=8.2Ω

VGE=±15V

t5 t7

t8 t6

Eoff(10%)=

IC VCE dt

Eoff(full)=

I^CVCE dt

Inductive Load

100

200

Collector Current IC (A)

Turn-off Loss vs. Collector Current

300

400

500 600

700

100

200 300

400

500 600 700

Collector Current IC (A)

Reverse Recovery Loss vs. Collector Current

0.1

Diode

IGBT

0.01

0.001

0.01

0.1

Time, t (s)

Transient thermal impedance

PDE-N600C20-0

HITACHI POWER SEMICONDUCTORS

Notices

1.The information given herein, including the specifications and dimensions, is subject to

change without prior notice to improve product characteristics. Before ordering,

purchasers are adviced to contact Hitachi sales department for the latest version of this

data sheets.

2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure

before use.

3.In cases where extremely high reliability is required(such as use in nuclear power control,

aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel

control equipment and various kinds of safety equipment), safety should be ensured by

using semiconductor devices that feature assured safety or by means of users’ fail-safe

precautions or other arrangement. Or consult Hitachi’s sales department staff.

4.In no event shall Hitachi be liable for any damages that may result from an accident or

any other cause during operation of the user’s units according to this data sheets. Hitachi

assumes no responsibility for any intellectual property claims or any other problems that

may result from applications of information, products or circuits described in this data

sheets.

5.In no event shall Hitachi be liable for any failure in a semiconductor device or any

secondary damage resulting from use at a value exceeding the absolute maximum rating.

6.No license is granted by this data sheets under any patents or other rights of any third

party or Hitachi, Ltd.

7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,

without the expressed written permission of Hitachi, Ltd.

8.The products (technologies) described in this data sheets are not to be provided to any

party whose purpose in their application will hinder maintenance of international peace

and safety not are they to be applied to that purpose by their direct purchasers or any

third party. When exporting these products (technologies), the necessary procedures are

to be taken in accordance with related laws and regulations.

For inquiries relating to the products, please contact nearest overseas representatives which is located

“Inquiry” portion on the top page of a home page.

Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse

MBN600C20 [RENESAS]

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