N0604N [RENESAS]
N-channel MOSFET Low on-state resistance; N沟道MOSFET的低导通电阻型号: | N0604N |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | N-channel MOSFET Low on-state resistance |
文件: | 总8页 (文件大小:148K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
N0604N
N-channel MOSFET
R07DS0850EJ0100
Rev.1.00
60 V, 82 A, 6.5 mΩ
Aug 27, 2012
Description
The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
• Low input capacitance
Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current
ID(DC) = ±82 A
• RoHS Compliant
Ordering Information
Part No.
N0604N-S19-AY ∗
Lead Plating
Pure Sn (Tin)
Packing
Package
1
Tube
TO-220
50 p/tube
1.9 g TYP.
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Absolute Maximum Ratings (TA = 25°C, all terminals are connected)
Item
Symbol
VDSS
Ratings
60
Unit
V
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
VGSS
ID(DC)
ID(pulse)
PT1
±20
V
±82
A
1
Drain Current (pulse) ∗
±200
116
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
W
W
°C
°C
A
PT2
1.5
Tch
150
Storage Temperature
Single Avalanche Current ∗
Single Avalanche Energy ∗
Tstg
−55 to +150
35
2
IAS
2
EAS
125
mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
1.08
83.3
°C/W
°C/W
2
Channel to Ambient Thermal Resistance ∗
Rth(ch-A)
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 → 0 V, L = 100 μH
R07DS0850EJ0100 Rev.1.00
Aug 27, 2012
Page 1 of 6
N0604N
Chapter Title
Electrical Characteristics (TA = 25°C, all terminals are connected)
Item
Symbol
MIN.
TYP.
MAX.
1
Unit
μA
nA
V
Test Conditions
Zero Gate Voltage Drain Current IDSS
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 5 V, ID = 41 A
VGS = 10 V, ID = 41 A
Gate Leakage Current
IGSS
±100
4.0
Gate to Source Cut-off Voltage
Forward Transfer Admittance ∗
VGS(off)
| yfs |
2.0
30
1
S
Drain to Source On-state
RDS(on)
5.1
6.5
mΩ
1
Resistance ∗
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Ciss
Coss
Crss
td(on)
tr
4150
310
165
24
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 30 V, ID = 41 A,
VGS = 10 V,
RG = 0 Ω
8
Turn-off Delay Time
Fall Time
td(off)
tf
64
7
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ∗
Reverse Recovery Time
Reverse Recovery Charge
Note: ∗1. Pulsed
QG
75
VDD = 48 V,
QGS
QGD
VF(S–D)
trr
21
VGS = 10 V,
21
ID = 82 A
1
1.5
IF = 82 A, VGS = 0 V
IF = 82 A, VGS = 0 V,
di/dt = 100 A/μs
38
39
ns
nC
Qrr
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
V
GS
0
R
G
= 25 Ω
50 Ω
R
L
90%
V
GS
Wave Form
V
GS
10%
90%
R
G
PG.
V
DD
PG.
GS = 20 → 0 V
V
DD
V
DS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
I
D
τ
t
d(on)
t
r
t
d(off)
t
f
V
DD
t
on
t
off
τ = 1
μ
s
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
50 Ω
PG.
V
DD
R07DS0850EJ0100 Rev.1.00
Aug 27, 2012
Page 2 of 6
N0604N
Chapter Title
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
150
100
50
60
40
20
0
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
IDC(pulse) = 200 A
10 ms
IDC(DC) = 82 A
μ
DC
1
Power Dissipation Limited
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 83.3 °C/W
1
Rth(ch-C) = 1.08 °C/W
0.1
0.01
Single pulse
0.1 m
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0850EJ0100 Rev.1.00
Aug 27, 2012
Page 3 of 6
N0604N
Chapter Title
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
300
100
10
Pulsed
VGS = 10 V
TA = 125 °C
75 °C
200
100
0
25 °C
–25 °C
1
0.1
Pulsed
VDS = 10 V
0.01
0.001
0
1
2
3
4
5
0
1
2
3
4
5
6
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
4
3
2
1
0
100
TA = 125°C
75°C
25°C
–25°C
10
Pulsed
VDS = 5 V
VDS = 10 V
ID = 1.0 mA
1
-50
0
50
100
150
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
14
20
Pulsed
Pulsed
12
10
8
ID = 41 A
15
10
5
VGS = 10 V
6
4
2
0
0
0
5
10
15
20
1
10
100
1000
VGS - Gate to Source Voltage - V
ID - Drain Current - A
R07DS0850EJ0100 Rev.1.00
Aug 27, 2012
Page 4 of 6
N0604N
Chapter Title
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
14
10000
12
10
8
Ciss
1000
100
Coss
6
4
Puls ed
GS = 10 V
V
VGS = 0 V
f = 1 MHz
2
Crss
ID = 41 A
0
-50
0
50
100
150
0.01
0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
10
1000
100
10
VDD = 12 V
30 V
8
6
4
2
0
td(off)
48 V
td(on)
tr
VDD = 30 V
tf
VGS =10 V
ID = 82 A
RG = 0 Ω
1
0.1
1
10
100
0
20
40
60
80
ID - Drain Current - A
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10
1
VGS = 10 V
100
10
0 V
1
VGS = 0 V
0.1
di/dt = 100 A/μ s
Pulsed
0.01
0
0.4
0.8
1.2
1.6
0.1
1
10
100
IF - Diode Forward Current - A
VF(S-D) - Source to Drain Voltage - V
R07DS0850EJ0100 Rev.1.00
Aug 27, 2012
Page 5 of 6
N0604N
Chapter Title
Package Drawing (Unit: mm)
TO-220
4.8 MAX.
1.3±±.2
1±.2 MAX.
8.7 TYP.
3.6±±.2
4
1.52±±.2
±.8±±.1
2.54 TYP.
±.5±±.2
2.4±±.2
2.54 TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1 2 3
Equivalent Circuit
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0850EJ0100 Rev.1.00
Aug 27, 2012
Page 6 of 6
Revision History
N0604N Data Sheet
Description
Summary
Rev.
1.00
Date
Page
Aug 27, 2012
−
First Edition Issued
All trademarks and registered trademarks are the property of their respective owners.
C - 1
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