NE3520S03-T1D [RENESAS]
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain; N沟道砷化镓HJ -FET ，K波段低噪声和高增益
| 型号： | NE3520S03-T1D |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
| 文件： | 总10页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
NE3520S03
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
R09DS0029EJ0100
Rev.1.00
Oct 18, 2011
FEATURES
•
Low noise figure and high associated gain:
NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA
•
K band Micro-X plastic (S03) package
APPLICATIONS
•
•
20 GHz band DBS LNB
Other K band communication system
ORDERING INFORMATION
Part Number
Order Number
Package
S03 package
(Pb-Free)
Quantity
Marking
Supplying Form
NE3520S03-T1C
NE3520S03-T1C-A
2 kpcs/reel
J
• Embossed tape 8 mm wide
• Pin 4 (Gate) face the
perforation side of the tape
NE3520S03-T1D
NE3520S03-T1D-A
10 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3520S03
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
VDS
VGS
ID
Ratings
Unit
4.0
V
–3.0
V
IDSS
mA
μA
mW
°C
Gate Current
IG
100
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Ptot
165
Tch
+125
Tstg
–65 to +125
°C
Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 1 of 8
NE3520S03
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Drain Current
Symbol
MIN.
+1
5
TYP.
MAX.
Unit
VDS
+2
+3
V
ID
10
15
mA
dBm
Input Power
Pin
–
–
0
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut-off Voltage
Transconductance
Symbol
Test Conditions
VGS = –3.0 V
VDS = 2 V, VGS = 0 V
MIN.
TYP.
MAX.
Unit
μA
mA
V
IGSO
–
0.5
10
IDSS
25
40
70
VGS (off) VDS = 2 V, ID = 100 μA
–0.2
50
–0.7
65
–1.3
–
gm
NF
Ga
VDS = 2 V, ID = 10 mA
mS
dB
dB
Noise Figure
VDS = 2 V, ID = 10 mA, f = 20 GHz
–
0.65
13.5
0.90
–
Associated Gain
11.5
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 2 of 8
NE3520S03
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
200
150
100
50
0
50
100
150
200
(°C)
250
Ambient Temperature T
A
DRAIN CURRENT vs.
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GATE TO SOURCE VOLTAGE
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
V
DS = 2 V
V
GS = 0 V
–0.1 V
–0.2 V
–0.3 V
–0.4 V
–0.5 V
0.0
1.0
2.0
3.0
4.0
–0.8
–0.6
–0.4
–0.2
0
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
20
19
18
17
16
15
14
13
12
11
10
16
15
14
13
12
11
10
9
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
f = 20 GHz
V
DS = 2 V
= 10 mA
V
DS = 2 V
I
D
G
a
G
a
NFmin
8
NFmin
7
6
10
15
20
25
0
5
10
15
(mA)
20
25
Frequency f (GHz)
Drain Current I
D
Remark The graphs indicate nominal characteristics.
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 3 of 8
NE3520S03
S-PARAMETERS
S-parameters/Noise-parameters are provided on our web site in a form (S2P) that enables direct import to a microwave
circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 4 of 8
NE3520S03
RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
2.80
2.60
2.06
0.64
S–S2.2mm
1.7
1.7
Reference Plane
Reference Plane
(Calibration Plane)
(Calibration Plane)
φ
0.3 TH
6.0
RT/duroid 5880/ROGERS
t = 0.254 mm
εr = 2.20
tan delta = 0.0009 @10 GHz
Au-flash plate
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 5 of 8
NE3520S03
PACKAGE DIMENSIONS
S03 (UNIT: mm)
(Top View)
(Bottom View)
3.2 0.2
0.65 TYP.
2.2 0.2
1
1
J
4
2
2
4
3
3
(Side View)
2.2 0.2
1.7
3.2 0.2
PIN CONNECTIONS
1. Source
2. Drain
3. Source
4. Gate
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 6 of 8
NE3520S03
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature) : 260°C or below
IR260
Time at peak temperature
: 10 seconds or less
: 60 seconds or less
: 120 30 seconds
: 3 times
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
Partial Heating
Peak temperature (terminal temperature)
Soldering time (per side of device)
: 350°C or below
: 3 seconds or less
HS350
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
CAUTION
Do not use different soldering methods together (except for partial heating).
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 7 of 8
NE3520S03
This product uses gallium arsenide (GaAs).
Caution GaAs Products
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 8 of 8
Revision History
NE3520S03 Data Sheet
Description
Summary
Rev.
1.00
Date
Page
Oct 18, 2011
-
First edition issued
All trademarks and registered trademarks are the property of their respective owners.
C - 1
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Colophon 1.1
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