NP32N06ELD [RENESAS]
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,32A I(D),TO-263AB;
| 型号： | NP32N06ELD |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,32A I(D),TO-263AB |
| 文件： | 总4页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY PRODUCT INFORMATION
MOS FIELD EFFECT TRANSISTOR
NP32N06CLD,NP32N06DLD,NP32N06ELD
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
FEATURES
• Channel Temperature 175 degree rated
• Super Low On-state Resistance
PART NUMBER
PACKAGE
TO-220AB
TO-262
NP32N06CLD
NP32N06DLD
NP32N06ELD
DS(on)1
GS
D
R
R
= 34 mΩ (MAX.) (V = 10 V, I = 16 A)
DS(on)2
GS
D
= 40 mΩ (MAX.) (V = 5 V, I = 16 A)
TO-263
iss
iss
• Low C : C = 870 pF (TYP.)
• Built-in Gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
DSS
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
V
V
60
±20
±32
±100
1.8
V
V
GSS
D(DC)
I
A
Drain Current (Pulse) Note1
D(pulse)
I
A
A
T
P
Total Power Dissipation (T = 25 °C)
W
W
A
ch
T
P
Total Power Dissipation (T = 25 °C)
60
AS
Single Avalanche Current
Single Avalanche Energy Note2
Channel Temperature
I
TBD
TBD
175
AS
E
mJ
°C
ch
T
stg
Storage Temperature
T
–55 to + 175 °C
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V →0
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
Rth(ch-A)
2.5
°C/W
°C/W
Channel to Ambient
83.3
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information contained in this document is being issued in advance of the production cycle for the
device. The parameters for the device may change before final production or NEC Corporation, at its own
discretion, may withdraw the device prior to its production.
Document No.
Date Published January 1999 NS CP(K)
Printed in Japan
D13791EJ2V0PM00 (2nd edition)
1998
©
NP32N06CLD,NP32N06DLD,NP32N06ELD
ELECTRICAL CHRACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
RDS(on)1
RDS(on)2
RDS(on)3
VGS(off)
| yfs |
IDSS
TEST CONDITIONS
VGS = 10 V, ID = 16 A
MIN. TYP. MAX. UNIT
Drain to Source On-state Resistance
25
31
37
1.5
21
34
40
50
2.0
mΩ
mΩ
mΩ
V
VGS = 5 V, ID = 16 A
VGS = 4 V, ID = 16 A
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
VDS = 10 V, ID = 250 µA
VDS = 10 V, ID = 16 A
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 25 V, VGS = 0 V, f = 1 MHz
1.0
8
S
10
±10
1310
290
150
50
µA
µA
pF
pF
pF
ns
IGSS
Ciss
870
190
82
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-on Delay Time
Crss
td(on)
tr
td(off)
tf
ID = 16 A, VGS(on) = 10 V, VDD = 30 V,
23
Rise Time
RG = 10 Ω
280
65
700
130
230
35
ns
Turn-off Delay Time
ns
Fall Time
90
ns
Total Gate Charge 1
QG1
ID = 32 A, VDD = 48 V, VGS = 10 V
ID = 32 A, VDD = 48 V, VGS = 5 V
23
nC
nC
nC
nC
V
Total Gate Charge 2
QG2
13
20
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
3.7
7.2
1.0
50
QGD
VF(S-D)
trr
IF = 32 A, VGS = 0 V
IF = 32 A, VGS = 0 V, di/dt = 100 A/µs
ns
Qrr
68
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
I =2 mA
D.U.T.
G
V
GS
R
L
R
L
90 %
90 %
V
GS
Wave Form
V
GS (on)
10 %
10 %
RG
0
50 Ω
PG.
PG.
V
DD
V
DD
R = 10 Ω
G
90 %
I
D
I
D
V
0
GS
10 %
I
D
0
Wave Form
t
d (on)
t
r
t
d (off)
t
f
t
t
on
t
off
µ s
t = 1
Duty Cycle ≤ 1 %
2
Preliminary Product Information D13791EJ2V0PM00
NP32N06CLD,NP32N06DLD,NP32N06ELD
PACKAGE DRAWINGS (Unit : mm)
1. TO-220AB (MP-25)
2. TO-262 (MP-25 Fin Cut)
4.8 MAX.
4.8 MAX.
1.3±0.2
10.6 MAX.
3.6±0.2
10
1.3±0.2
4
10.0
1
2
3
4
1.3±0.2
1
2 3
1.3±0.2
0.5±0.2
0.5±0.2
2.8±0.2
0.75±0.3
2.54
2.54
1.Gate
2.Drain
3.Source
0.75±0.1
2.54
2.8±0.2
2.54
4.Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
3. TO-263 (JEDEC type : MP-25ZJ)
4.8 MAX.
(10.0)
4
1.3±0.2
1.4±0.2
0.7±0.2
(2.54)
(2.54)
0.5±0.2
1
2
3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
3
Preliminary Product Information D13791EJ2V0PM00
NP32N06CLD,NP32N06DLD,NP32N06ELD
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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