NV4V31MF [RENESAS]
Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source; 蓝紫色激光二极管405nm的蓝紫色激光光源
| 型号： | NV4V31MF |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source |
| 文件： | 总8页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet
Specifications in this document are tentative and subject to change.
NV4V31MF
Blue-Violet Laser Diode
R08DS0045EJ0001
Rev.0.01
Sep 08, 2011
405 nm Blue-Violet Laser Light Source
DESCRIPTION
The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure
achieves a high optical power output of 175 mW (CW) at up to 85°C. The NV4V31MF can provide excellent linearity
from low to high output at high temperatures, and reduces the unevenness of beam divergence.
FEATURES
•
•
•
•
High optical output power
Po = 175 mW @CW
λp = 405 nm TYP.
TC = −5 to +85°C
Peak emission wavelength
Wide operating temperature range
φ 3.8 mm small CAN package
APPLICATIONS
•
Blue-violet laser light source
R08DS0045EJ0001 Rev.0.01
Sep 08, 2011
Page 1 of 6
Preliminary document
Specifications in this document are tentative and subject to change.
NV4V31MF
Chapter Title
PACKAGE DIMENSIONS (UNIT: mm)
X
WITH GLASS
90° 2°
φ
EFFECTIVE
DIAMETER
Y
φ
0.65 MIN.
0.25 0.07
+0.0
φ
3.8–0.025
φ
φ
3.1 MAX.
2.42 0.1
LD CHIP
0.2 MIN.
Z
STEM
REFERENCE
PLAIN
3–
φ
0.3 0.05
P.C.D.
1.43 0.15
φ
1
1
2
3
LD
3 (Stem GND)
0.2 0.1
2
PIN CONNECTIONS
BOTTOM VIEW
Remarks 1. Cap glass thickness: 0.25 0.03 mm
Cap glass refractive index:1.53 (λ = 405 nm)
2. Position accuracy of the LD chip based on the center of stem
∆
∆
∆
x = 80
µ
µ
m
m
y = 80
µ
z = 80 m (*1)
R08DS0045EJ0001 Rev.0.01
Sep 08, 2011
Page 2 of 6
Preliminary document
Specifications in this document are tentative and subject to change.
NV4V31MF
Chapter Title
ORDERING INFORMATION
Part Number
Package
NV4V31MF
φ 3.8 mm CAN package
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C, unless otherwise specified)
Parameter
Symbol
Po
Ratings
180
Unit
mW
mW
V
Optical Output Power (CW)
Optical Output Power (pulse) *1
Reverse Voltage of LD
Pp
360
VR
2
Operating Case Temperature
Storage Temperature
TC
㧙5 to 㧗85
㧙40 to 㧗85
°C
°C
Tstg
Note: *1. Pulse condition: PW ≤ 50 ns, Duty ≤ 50%
RECOMMENDED OPERATING CONDITIONS
(T = 25°C, unless otherwise specified)
C
Parameter
Optical Output Power (CW)
Symbol
MAX.
Unit
Po
175
mW
ELECTRO-OPTICAL CHARACTERISTICS
(T = 25°C, unless otherwise specified)
C
Parameter
Symbol
Conditions
MIN.
TYP
35
MAX.
Unit
mA
mA
V
Threshold Current
Operating Current
Optical Voltage
Ith
Iop
CW
55
200
6.5
CW, Po = 175 mW
CW, Po = 175 mW
CW, Po = 20 mW, 175 mW
CW, Po = 175 mW
CW, Po = 175 mW
150
5.0
1.55
405
9
Vop
ηd
Slope Efficiency
1.1
400
6
W/A
nm
Peak Wavelength
λp
415
12
25
3
Beam Divergence (lateral)
Beam Divergence (vertical)
θ//
θ⊥
∆θ//
deg.
15
20
Position Accuracy Angle
(lateral)
CW, Po = 175 mW
㧙3
0
deg.
Position Accuracy Angle
(vertical)
∆θ⊥
㧙3
0
3
R08DS0045EJ0001 Rev.0.01
Sep 08, 2011
Page 3 of 6
Preliminary document
Specifications in this document are tentative and subject to change.
NV4V31MF
Chapter Title
NOTES ON HANDLING (UNIT: mm)
1. Recommended soldering conditions
Peak Temperature
Time
350°C or below
3 seconds or less
Soldering of leads should be made at the point 2.0 mm from the root of the lead
This device cannot be mounted using reflow soldering.
2. Usage cautions
(1) Take the following steps to ensure that the device is not damaged by static electricity.
Wear an antistatic wrist strap when soldering the device.
We recommend a strap with a 1 MΩ resistor.
Make sure that the work table and soldering iron are grounded.
Make sure that the soldering iron does not leak.
(2) Do not subject the package to undue stress.
The package has a tensile strength of 1N.
Do not exceed this rating. Also, avoid bending the leads as much as possible.
If the leads must be bent, bend them only once, making sure to anchor the base of the lead.
(3) Do not allow the glass window of the package to become scratched or dirty.
Also, do not subject the glass window to external force.
(4) Be sure to attach a heat sink to sufficiently dissipate heat.
(5) Use the device as soon as possible after opening the aluminum moisture barrier bag.
R08DS0045EJ0001 Rev.0.01
Sep 08, 2011
Page 4 of 6
Preliminary document
Specifications in this document are tentative and subject to change.
NV4V31MF
Chapter Title
REFERENCE
Document Name
Opto-Electronics Devices Pamphlet*1
Document No.
PX10160E
Note: *1. Published by the former NEC Electronics Corporation.
R08DS0045EJ0001 Rev.0.01
Sep 08, 2011
Page 5 of 6
Preliminary document
Specifications in this document are tentative and subject to change.
NV4V31MF
Chapter Title
SAFETY INFORMATION ON THIS PRODUCT
SEMICONDUCTOR LASER
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
OUTPUT POWER
WAVELENGTH
mW MAX
nm
CLASS lllb LASER PRODUCT
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
Warning Laser Beam
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
R08DS0045EJ0001 Rev.0.01
Sep 08, 2011
Page 6 of 6
Revision History
NV4V31MF Preliminary Data Sheet
Description
Summary
Rev.
0.01
Date
Page
Sep 08, 2011
−
First edition issued
All trademarks and registered trademarks are the property of their respective owners.
C - 1
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