R1EX24008ATAS0I [RENESAS]

Two-wire serial interface 8k EEPROM (1024-word × 8-bit); 两线串行接口EEPROM 8K (1024字× 8位)
R1EX24008ATAS0I
型号: R1EX24008ATAS0I
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Two-wire serial interface 8k EEPROM (1024-word × 8-bit)
两线串行接口EEPROM 8K (1024字× 8位)

存储 内存集成电路 光电二极管 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 时钟
文件: 总24页 (文件大小:180K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
R1EX24008ASAS0I  
R1EX24008ATAS0I  
Two-wire serial interface  
8k EEPROM (1024-word × 8-bit)  
REJ03C0364-0001  
Preliminary  
Rev.0.01  
Dec. 28, 2007  
Description  
R1EX24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable  
ROM). They realize high speed, low power consumption and a high level of reliability by employing  
advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also  
have a 16-byte page programming function to make their write operation faster.  
Features  
Single supply: 1.8 V to 5.5 V  
Two-wire serial interface (I2C serial bus)  
Clock frequency: 400 kHz  
Power dissipation:  
Standby: 2 µA (max)  
Active (Read): 1 mA (max)  
Active (Write): 3.0 mA (max)  
Automatic page write: 16-byte/page  
Write cycle time: 5 ms  
Endurance: 106 Cycles  
Data retention: 10 Years  
Preliminary: The specifications of this device are subject to change without notice. Please contact your  
nearest Renesas Technology’s Sales Dept. regarding specifications.  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 1 of 22  
R1EX24008AxxS0I  
Small size packages: SOP-8pin, TSSOP-8pin  
Shipping tape and reel  
TSSOP 8-pin: 3,000 IC/reel  
SOP 8-pin: 2,500 IC/reel  
Temperature range: 40 to +85°C  
Lead free products.  
Ordering Information  
Type No.  
Internal  
Operating voltage Frequency Package  
organization  
R1EX24008ASAS0I  
8k bit  
(1024 × 8-bit)  
1.8 V to 5.5 V  
400 kHz  
150 mil 8-pin plastic SOP  
PRSP0008DF-B  
(FP-8DBV)  
Lead free  
R1EX24008ATAS0I  
8k bit  
(1024 × 8-bit)  
1.8 V to 5.5 V  
400 kHz  
8-pin plastic TSSOP  
PTSP0008JC-B  
(TTP-8DAV)  
Lead free  
Pin Arrangement  
8-pin SOP/8-pin TSSOP  
1
2
3
4
A0  
8
7
6
5
VCC  
WP  
A1  
A2  
SCL  
SDA  
VSS  
(Top view)  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 2 of 22  
R1EX24008AxxS0I  
Pin Description  
Pin name  
A0 to A2  
SCL  
Function  
Device address  
Serial clock input  
Serial data input/output  
Write protect  
SDA  
WP  
VCC  
Power supply  
Ground  
VSS  
NC  
No connection  
Block Diagram  
High voltage generator  
VCC  
VSS  
Memory array  
WP  
A0, A1, A2  
SCL  
Control  
logic  
Y-select & Sense amp.  
Serial-parallel converter  
SDA  
Absolute Maximum Ratings  
Parameter  
Symbol  
VCC  
Value  
Unit  
Supply voltage relative to VSS  
Input voltage relative to VSS  
Operating temperature range*1  
Storage temperature range  
0.6 to +7.0  
0.5*2 to +7.0*3  
40 to +85  
V
Vin  
V
Topr  
Tstg  
°C  
°C  
55 to +125  
Notes: 1. Including electrical characteristics and data retention.  
2. Vin (min): 3.0 V for pulse width 50 ns.  
3. Should not exceed VCC + 1.0 V.  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 3 of 22  
R1EX24008AxxS0I  
DC Operating Conditions  
Parameter  
Symbol  
VCC  
Min  
1.8  
0
Typ  
0
Max  
5.5  
Unit  
V
Supply voltage  
VSS  
0
V
Input high voltage  
Input low voltage  
VIH  
V
CC × 0.7  
VCC + 0.5  
V
VIL  
0.3*1  
VCC × 0.3  
V
Operating temperature  
Topr  
40  
+85  
°C  
Notes: 1. VIL (min): 1.0 V for pulse width 50 ns.  
DC Characteristics (Ta = 40 to +85°C, VCC = 1.8 V to 5.5 V)  
Parameter  
Symbol Min  
Typ  
Max  
2.0  
2.0  
2.0  
1.0  
3.0  
0.4  
0.2  
Unit  
µA  
µA  
µA  
mA  
mA  
V
Test conditions  
Input leakage current  
Output leakage current  
Standby VCC current  
Read VCC current  
Write VCC current  
Output low voltage  
ILI  
VCC = 5.5 V, Vin = 0 to 5.5 V  
VCC = 5.5 V, Vout = 0 to 5.5 V  
Vin = VSS or VCC  
ILO  
ISB  
1.0  
ICC1  
ICC2  
VOL2  
VOL1  
VCC = 5.5 V, Read at 400 kHz  
VCC = 5.5 V, Write at 400 kHz  
VCC = 2.7 to 5.5 V, IOL = 3.0 mA  
VCC = 1.8 to 2.7 V, IOL = 1.5 mA  
V
Capacitance (Ta = +25°C, f = 1 MHz)  
Test  
Parameter  
Input capacitance (A0 to A2, SCL, WP) Cin*1  
Output capacitance (SDA)  
CI/O*1  
Symbol Min  
Typ  
Max  
6.0  
Unit  
pF  
conditions  
Vin = 0 V  
6.0  
pF  
Vout = 0 V  
Note: 1. This parameter is sampled and not 100% tested.  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 4 of 22  
R1EX24008AxxS0I  
AC Characteristics (Ta = 40 to +85°C, VCC = 1.8 to 5.5 V)  
Test Conditions  
Input pules levels:  
VIL = 0.2 × VCC  
VIH = 0.8 × VCC  
Input rise and fall time: 20 ns  
Input and output timing reference levels: 0.5 × VCC  
Output load: TTL Gate + 100 pF  
Parameter  
Symbol Min  
Typ  
106  
Max  
400  
Unit  
kHz  
ns  
Notes  
Clock frequency  
fSCL  
Clock pulse width low  
Clock pulse width high  
Noise suppression time  
Access time  
tLOW  
tHIGH  
tI  
1200  
600  
ns  
50  
900  
ns  
1
tAA  
100  
1200  
600  
600  
0
ns  
Bus free time for next mode  
Start hold time  
tBUF  
ns  
tHD.STA  
tSU.STA  
tHD.DAT  
tSU.DAT  
tR  
ns  
Start setup time  
ns  
Data in hold time  
Data in setup time  
Input rise time  
ns  
100  
ns  
300  
300  
ns  
1
1
Input fall time  
tF  
ns  
Stop setup time  
tSU.STO  
tDH  
600  
50  
ns  
Data out hold time  
Write protect hold time  
Write protect setup time  
Write cycle time  
ns  
tHD.WP  
tSU.WP  
tWC  
1200  
0
ns  
ns  
5
ms  
cycles  
2
3
Erase/Write Endurance  
Notes: 1. This parameter is sampled and not 100% tested.  
2. tWC is the time from a stop condition to the end of internally controlled write cycle.  
3. This parameter is sampled and not 100% tested.  
106 Cycles (Ta = 25°C)  
105 Cycles (Ta = 85°C)  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 5 of 22  
R1EX24008AxxS0I  
Timing Waveforms  
Bus Timing  
1/fSCL  
tLOW  
tR  
tF  
tHIGH  
SCL  
tSU.STA  
tHD.DAT  
tSU.DAT  
tHD.STA  
tSU.STO  
SDA  
(in)  
tBUF  
tAA  
tDH  
SDA  
(out)  
tSU.WP  
tHD.WP  
WP  
Write Cycle Timing  
Stop condition  
Start condition  
SCL  
SDA  
D0 in  
tWC  
(Internally controlled)  
Write data  
(Address (n))  
ACK  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 6 of 22  
R1EX24008AxxS0I  
Pin Function  
Serial Clock (SCL)  
The SCL pin is used to control serial input/output data timing. The SCL input is used to positive edge  
clock data into EEPROM device and negative edge clock data out of each device. Maximum clock rate is  
400 kHz.  
Serial Input/Output Data (SDA)  
The SDA pin is bidirectional for serial data transfer. The SDA pin needs to be pulled up by resistor as that  
pin is open-drain driven structure. Use proper resistor value for your system by considering VOL, IOL and  
the SDA pin capacitance. Except for a start condition and a stop condition which will be discussed later,  
the SDA transition needs to be completed during the SCL low period.  
Data Validity (SDA data change timing waveform)  
SCL  
SDA  
Data  
Data  
change  
change  
Note:  
High-to-low and low-to-high change of SDA should be done during the SCL low period.  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 7 of 22  
R1EX24008AxxS0I  
Device Address (A0, A1, A2)  
Two devices can be wired for one common data bus line as maximum. Device address pins are used to  
distinguish each device and device address pins should be connected to VCC or VSS . When device address  
code provided from SDA pin matches corresponding hard-wired device address pins A0 to A2, that one  
device can be activated.  
Pin Connections for A0 to A2  
Pin connection  
Max connect  
Memory size number  
A2  
A1  
A0  
Note  
1
8k bit  
2
VCC/VSS  
*
×*2  
×*2  
Use A0,A1 for memory address a8and a9  
Note: 1. During floating, “VCC/VSS” are fixed to VSS.  
2. Floating state can be possible.  
Write Protect (WP)  
When the Write Protect pin (WP) is high, the write protection feature is enabled and operates as shown in  
the following table.  
Also, acknowledgment "0" is outputted after inputting device address and memory address. After  
inputting write data, acknowledgment "1""(NO ACK) is outputted.  
When the WP is low, write operation for all memory arrays are allowed. The read operation is always  
activated irrespective of the WP pin status.  
Write Protect Area  
Write protect area  
WP pin status  
8k bit  
VIH  
VIL  
Full (8k bit)  
Normal read/write operation  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 8 of 22  
R1EX24008AxxS0I  
Functional Description  
Start Condition  
A high-to-low transition of the SDA with the SCL high is needed in order to start read, write operation  
(See start condition and stop condition).  
Stop Condition  
A low-to-high transition of the SDA with the SCL high is a stop condition. The stand-by operation starts  
after a read sequence by a stop condition. In the case of write operation, a stop condition terminates the  
write data inputs and place the device in a internally-timed write cycle to the memories. After the  
internally-timed write cycle which is specified as tWC, the device enters a standby mode (See write cycle  
timing).  
Start Condition and Stop Condition  
SCL  
SDA  
(in)  
Start condition  
Stop condition  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 9 of 22  
R1EX24008AxxS0I  
Acknowledge  
All addresses and data words are serially transmitted to and from in 8-bit words. The receiver sends a zero  
to acknowledge that it has received each word. This happens during ninth clock cycle. The transmitter  
keeps bus open to receive acknowledgment from the receiver at the ninth clock. In the write operation,  
EEPROM sends a zero to acknowledge after receiving every 8-bit words. In the read operation, EEPROM  
sends a zero to acknowledge after receiving the device address word. After sending read data, the  
EEPROM waits acknowledgment by keeping bus open. If the EEPROM receives zero as an acknowledge,  
it sends read data of next address. If the EEPROM receives acknowledgment "1" (no acknowledgment)  
and a following stop condition, it stops the read operation and enters a stand-by mode. If the EEPROM  
receives neither acknowledgment "0" nor a stop condition, the EEPROM keeps bus open without sending  
read data.  
Acknowledge Timing Waveform  
1
2
8
9
SCL  
SDA IN  
Acknowledge  
out  
SDA OUT  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 10 of 22  
R1EX24008AxxS0I  
Device Addressing  
The EEPROM device requires an 8-bit device address word following a start condition to enable the chip  
for a read or a write operation. The device address word consists of 4-bit device code, 3-bit device address  
code and 1-bit read/write(R/W) code. The most significant 4-bit of the device address word are used to  
distinguish device type and this EEPROM uses “1010” fixed code. The device address word is followed  
by the 1-bit device address code A2, memory adderess a9, a8. The device address code selects one device  
out of two devices which are connected to the bus. This means that the device is selected if the inputted 1-  
bit device address code is equal to the corresponding hard-wired A2 pin status.  
The eighth bit of the device address word is the read/write(R/W) bit. A write operation is initiated if this  
bit is “0” and a read operation is initiated if this bit is “1” . The EEPROM turns to a stand-by state if the  
device code is not “1010” or device address code doesn’t coincide with status of the correspond hard-wired  
device address pins A0 to A2.  
Device Address Word  
Device address word (8-bit)  
Device code (fixed)  
Device address code  
A2 a9  
R/W code*1  
8k  
1
0
1
0
a8  
R/W  
Note: 1. R/W=“1” is read and R/W = “0” is write.  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 11 of 22  
R1EX24008AxxS0I  
Write Operations(WP=Low)  
Byte Write: (Write operation during WP=Low status)  
A write operation requires an 8-bit device address word with R/W = “0”. Then the EEPROM sends  
acknowledgment "0" at the ninth clock cycle. After these, the 8k bit EEPROM receives 8-bit memory  
address words. Upon receipt of this memory address, the EEPROM outputs acknowledgment "0" and  
receives a following 8-bit write data. After receipt of write data, the EEPROM outputs acknowledgment  
"0". If the EEPROM receives a stop condition, the EEPROM enters an internally-timed write cycle and  
terminates receipt of SCL, SDA inputs until completion of the write cycle. The EEPROM returns to a  
standby mode after completion of the write cycle.  
Byte Write Operation  
WP  
Device  
Memory  
address  
address (n)  
Write data (n)  
W
1 0 1 0  
8k  
ACK  
R/W  
ACK  
ACK  
Stop  
Start  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 12 of 22  
R1EX24008AxxS0I  
Page Write:  
The EEPROM is capable of the page write operation which allows any number of bytes up to 16 bytes to  
be written in a single write cycle. The page write is the same sequence as the byte write except for  
inputting the more write data. The page write is initiated by a start condition, device address word,  
memory address(n) and write data (Dn) with every ninth bit acknowledgment. The EEPROM enters the  
page write operation if the EEPROM receives more write data (Dn+1) instead of receiving a stop  
condition. The a0 to a3 address bits are automatically incremented upon receiving write data (Dn+1). The  
EEPROM can continue to receive write data up to 16 bytes. If the a0 to a3 address bits reaches the last  
address of the page, the a0 to a3 address bits will roll over to the first address of the same page and  
previous write data will be overwritten. Upon receiving a stop condition, the EEPROM stops receiving  
write data and enters internally-timed write cycle.  
Page Write Operation  
WP  
Device  
Memory  
address  
address (n)  
Write data (n)  
ACK  
Write data (n+m)  
8k  
Start  
W
1 0 1 0  
ACK  
R/W  
ACK  
ACK  
Stop  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 13 of 22  
R1EX24008AxxS0I  
Write Operations(WP=High)  
Byte Write: (Write operation during WP=High status)  
A write operation requires an 8-bit device address word with R/W = “0”. Then the EEPROM sends  
acknowledgment "0" at the ninth clock cycle. After these, the 8k bit EEPROM receives 8-bit memory  
address. Upon receipt of this memory address, the EEPROM outputs acknowledgment "0". After receipt  
of 8-bit write data, the EEPROM outputs acknowledgment "1"(NO ACK). Then the EEPROM write  
operations are not allowed.  
Byte Write Operation  
WP  
Device  
address  
Memory  
address (n)  
No ACK  
Stop  
Write data (n)  
W
1 0 1 0  
8k  
ACK  
R/W  
ACK  
Start  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 14 of 22  
R1EX24008AxxS0I  
Page Write:  
The page write is the same sequence as the byte write. The page write is initiated by a start condition,  
device address word and memory address(n) with every ninth bit acknowledgment"0". But after inputting  
write data(Dn) , the EEPROM outputs acknowledgment "1"(NO ACK). Then the EEPROM write  
operations are not allowed.  
Page Write Operation  
WP  
Device  
Memory  
No ACK  
No ACK  
address  
address (n)  
Write data (n)  
ACK  
Write data (n+m)  
8k  
Start  
W
1 0 1 0  
ACK  
R/W  
Stop  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 15 of 22  
R1EX24008AxxS0I  
Acknowledge Polling:  
Acknowledge polling feature is used to show if the EEPROM is in a internally-timed write cycle or not.  
This feature is initiated by the stop condition after inputting write data. This requires the 8-bit device  
address word following the start condition during a internally-timed write cycle. Acknowledge polling  
will operate when the R/W code = “0”. Acknowledgment “1” (no acknowledgment) shows the EEPROM  
is in a internally-timed write cycle and acknowledgment “0” shows that the internally-timed write cycle has  
completed. See Write Cycle Polling using ACK.  
Write Cycle Polling Using ACK  
Send  
write command  
Send  
stop condition  
to initiate write cycle  
Send  
start condition  
Send  
device address word  
with R/W = 0  
No  
No  
ACK  
returned  
Yes  
Next operation is  
addressing the memory  
Yes  
Send  
Send  
Send  
memory address  
start condition  
stop condition  
Send  
stop condition  
Proceed random address  
read operation  
Proceed write operation  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 16 of 22  
R1EX24008AxxS0I  
Read Operation  
There are three read operations: current address read, random read, and sequential read. Read operations  
are initiated the same way as write operations with the exception of R/W = “1”.  
Current Address Read:  
The internal address counter maintains the last address accessed during the last read or write operation,  
with incremented by one. Current address read accesses the address kept by the internal address counter.  
After receiving a start condition and the device address word (R/W is “1”), the EEPROM outputs the 8-bit  
current address data from the most significant bit following acknowledgment “0”. If the EEPROM  
receives acknowledgment “1” (no acknowledgment) and a following stop condition, the EEPROM stops  
the read operation and is turned to a standby state. In case the EEPROM has accessed the last address of  
the last page at previous read operation, the current address will roll over and returns to zero address. In  
case the EEPROM has accessed the last address of the page at previous write operation, the current address  
will roll over within page addressing and returns to the first address in the same page. The current address  
is valid while power is on. The current address after power on will be indefinite. The random read  
operation described below is necessary to define the memory address.  
Current Address Read Operation  
Device  
address  
Read data (n+1)  
ACK No ACK  
8k  
1*  
1*R  
1 0 1 0  
Stop  
Start  
R/W  
Note:1* Don't care bit  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 17 of 22  
R1EX24008AxxS0I  
Random Read:  
This is a read operation with defined read address. A random read requires a dummy write to set read  
address. The EEPROM receives a start condition, device address word (R/W=0) and memory address 2 ×  
8-bit sequentially. The EEPROM outputs acknowledgment “0” after receiving memory address then enters  
a current address read with receiving a start condition. The EEPROM outputs the read data of the address  
which was defined in the dummy write operation. After receiving acknowledgment “1”(no  
acknowledgment) and a following stop condition, the EEPROM stops the random read operation and  
returns to a standby state.  
Random Read Operation  
Memory  
address (n)  
Device  
address  
Device  
address  
#
Read data (n)  
8k  
Start  
@
W
R
1 0 10  
1 0 1 0  
R/W  
ACK  
ACK  
R/W  
No ACK  
Stop  
Start  
ACK  
Dummy wrie  
Curecaddress read  
Notes: 1. Don't care bit  
2. 2nd device address code(#)should be same as 1st(@).  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 18 of 22  
R1EX24008AxxS0I  
Sequential Read:  
Sequential reads are initiated by either a current address read or a random read. If the EEPROM receives  
acknowledgment “0” after 8-bit read data, the read address is incremented and the next 8-bit read data are  
coming out. This operation can be continued as long as the EEPROM receives acknowledgment “0”. The  
address will roll over and returns address zero if it reaches the last address of the last page. The sequential  
read can be continued after roll over. The sequential read is terminated if the EEPROM receives  
acknowledgment “1” (no acknowledgment) and a following stop condition.  
Sequential Read Operation  
Device  
address  
Read data (n) Read data (n+1) Read data (n+2) Read data (n+m)  
R
1 0 1 0  
*1  
*1  
8k  
ACK  
ACK  
R/W  
ACK  
ACK  
No ACK  
Stop  
Start  
*1: Don't care bit  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 19 of 22  
R1EX24008AxxS0I  
Notes  
Data Protection at VCC On/Off  
When VCC is turned on or off, noise on the SCL and SDA inputs generated by external circuits (CPU, etc)  
may act as a trigger and turn the EEPROM to unintentional program mode. To prevent this unintentional  
programming, this EEPROM has a power on reset function. Be careful of the notices described below in  
order for the power on reset function to operate correctly.  
SCL and SDA should be fixed to VCC or VSS during VCC on/off. Low to high or high to low transition  
during VCC on/off may cause the trigger for the unintentional programming.  
VCC should be turned off after the EEPROM is placed in a standby state.  
V
CC should be turned on from the ground level(VSS) in order for the EEPROM not to enter the  
unintentional programming mode.  
VCC turn on speed should be longer than 10 µs.  
Noise Suppression Time  
This EEPROM have a noise suppression function at SCL and SDA inputs, that cut noise of width less than  
50 ns. Be careful not to allow noise of width more than 50 ns.  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 20 of 22  
R1EX24008AxxS0I  
Package Dimensions  
R1EX24008ASAS0I (PRSP0008DF-B / Previous Code: FP-8DBV)  
JEITA Package Code  
P-SOP8-3.9x4.89-1.27  
RENESAS Code  
PRSP0008DF-B  
Previous Code  
FP-8DBV  
MASS[Typ.]  
0.08g  
*1  
D
F
NOTE)  
8
5
1. DIMENSIONS"*1 (Nom)"AND"*2"  
DO NOT INCLUDE MOLD FLASH.  
2. DIMENSION"*3"DOES NOT  
INCLUDE TRIM OFFSET.  
b
p
Index mark  
Terminal cross section  
( Ni/Pd/Au plating )  
Dimension in Millimeters  
Reference  
1
4
Symbol  
Min Nom Max  
*3  
bp  
x
e
Z
D
M
4.89 5.15  
E
A2  
A1  
A
3.90  
L1  
0.102 0.14 0.254  
1.73  
bp  
b1  
c
0.35 0.40 0.45  
0.15 0.20 0.25  
L
c1  
y
θ
HE  
e
0°  
8°  
Detail F  
5.84 6.02 6.20  
1.27  
x
0.25  
y
Z
0.10  
0.69  
L
L1  
0.406 0.60 0.889  
1.06  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 21 of 22  
R1EX24008AxxS0I  
R1EX24008ATAS0I (PTSP0008JC-B / Previous Code: TTP-8DAV)  
JEITA Package Code  
P-TSSOP8-4.4x3-0.65  
RENESAS Code  
PTSP0008JC-B  
Previous Code  
TTP-8DAV  
MASS[Typ.]  
0.034g  
*1  
D
F
8
5
NOTE)  
1. DIMENSIONS"*1 (Nom)"AND"*2"  
DO NOT INCLUDE MOLD FLASH.  
2. DIMENSION"*3"DOES NOT  
INCLUDE TRIM OFFSET.  
bp  
Terminal cross section  
( Ni/Pd/Au plating )  
Dimension in Millimeters  
Reference  
Symbol  
Min Nom Max  
Index mark  
D
E
3.00 3.30  
4.40  
A2  
A1  
A
bp  
b1  
c
L 1  
0.03 0.07 0.10  
1.10  
0.15 0.20 0.25  
1
4
*3  
e
bp  
Z
x
M
0.10 0.15 0.20  
c1  
θ
0°  
8°  
L
HE  
e
6.20 6.40 6.60  
0.65  
0.13  
Detail F  
x
y
y
0.10  
Z
L
L1  
0.805  
0.40 0.50 0.60  
1.00  
REJ03C0364-0001 Rev.0.01 Dec. 28, 2007  
Page 22 of 22  
Revision History  
R1EX24008AxxS0I Data Sheet  
Rev. Date  
Contents of Modification  
Page Description  
Initial issue  
0.01 Dec. 28, 2007  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Notes:  
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes  
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property  
rights or any other rights of Renesas or any third party with respect to the information in this document.  
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,  
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.  
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass  
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws  
and regulations, and procedures required by such laws and regulations.  
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this  
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,  
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be  
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )  
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a  
result of errors or omissions in the information included in this document.  
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability  
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular  
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.  
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications  
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality  
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or  
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall  
have no liability for damages arising out of the uses set forth above.  
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:  
(1) artificial life support devices or systems  
(2) surgical implantations  
(3) healthcare intervention (e.g., excision, administration of medication, etc.)  
(4) any other purposes that pose a direct threat to human life  
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing  
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all  
damages arising out of such applications.  
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,  
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages  
arising out of the use of Renesas products beyond such specified ranges.  
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain  
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage  
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and  
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software  
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.  
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as  
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.  
Renesas shall have no liability for damages arising out of such detachment.  
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.  
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have  
any other inquiries.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
Renesas Technology (Shanghai) Co., Ltd.  
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120  
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898  
Renesas Technology Hong Kong Ltd.  
7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2377-3473  
Renesas Technology Taiwan Co., Ltd.  
10th Floor, No.99, Fushing North Road, Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
Renesas Technology Korea Co., Ltd.  
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea  
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145  
Renesas Technology Malaysia Sdn. Bhd  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: <603> 7955-9390, Fax: <603> 7955-9510  
© 2008. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .7.2  

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